SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet 3468, Rev. D
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2080/90/100CT-G
MBRB2080/90/100CT-G
MBR2080/90/100CT-1-G
MBR20…CT-G/MBRB20…CT-G/MBR20…CT-1-G
SCHOTTKY RECTIFIER
Applications:
•
••
• Switching power supply •
••
• Conve rters •
••
• Free-Wheeling diodes •
••
• Reverse bat t ery protection
Features:
• 150 °C TJ operation
• Cent e r tap configuration
• Low forwar d voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Hig h fr e quenc y ope ration
• Guard ring for enhanced ruggedness and long term reliability
Case styles
MBR20…CT-G
TO-220AB
MBRB20…CT-G
D2PAK
MBR20…CT-1-G
TO-262
Mechanical Dimensions: In mm/ inches
TO-220AB
SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet 3468, Rev. D
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2080/90/100CT-G
MBRB2080/90/100CT-G
MBR2080/90/100CT-1-G
D2PAK
10.16(0.400)
REF.
15.49(0.610)
14.73(0.580)
1.40(0.055)
1.14(0.045)
3
×
8.90(0.350)
8.50(0.335)
2
×
0.93(0.037)
0.69(0.027)
4.69(0.185)
4.20(0.165)
1.32(0.052)
1.22(0.048)
5.28(0.208)
4.78(0.188)
5.08(0.200)REF.
0.55(0.022)
0.46(0.018)
BASE
COMMON
CATHODE
ANODE 1 ANODE 2
CATHODE
COMMON
1.17(0.046)
1.37(0.054)
1.30(0.051)
1.70(0.067)
TO-262
SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet 3468, Rev. D
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2080/90/100CT-G
MBRB2080/90/100CT-G
MBR2080/90/100CT-1-G
Maximum Ratings:
Characteristics Symbol Condition Max. U
ni
ts
80 MBR2080CT-G
MBRB2080CT-G
MBR2080CT-1-G
90 MBR2090CT-G
MBRB2090CT-G
MBR2090CT-1-G
Peak Inverse Voltage VRWM -
100 MBR20100CT-G
MBRB20100CT-G
MBR20100CT-1-G
V
10(Per leg) Max. Average Forward IF(AV) 50% duty cycle @TC =133℃,
rectangular wave form 20(Per device) A
Max. Peak One Cycle Non-
Repetiti ve Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
150
A
Peak Repetitive Reverse
Surge Current (per leg) IRRM 2.0µs,1.0KHz 0.5 A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop
(per leg)* VF1 @ 10A, Pulse, TJ = 25 ℃
@ 20 A, Puls e, TJ = 25 ℃
0.85
0.95 V
V
F2 @ 10 A, Pul se, T J = 125 ℃
@ 20 A, Puls e, TJ = 125 ℃
0.75
0.85 V
Max. Reverse Current
(per leg)* IR1 @VR = rated VR
TJ = 25 ℃ 1.00 mA
I
R2 @VR = rated VR
TJ = 125 ℃
6.0 mA
Max. Voltage Rate of Change dv/dt - 10,000 V/µs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal -Mec hanic al Spe cif ica tions:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150
℃
Max. Storage Temperature Tstg - -55 to +150
℃
Maximum Thermal
Resistan ce Ju n ctio n to Case
(per leg)
RθJC DC operation 2.0 ℃/W
Approximate Weight wt - 1.9 g
Mounting Torque TM - 6(Min.)
12(Max.) Kg-cm
Case Style TO-220AB D2PAK TO-262
SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet 3468, Rev. D
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2080/90/100CT-G
MBRB2080/90/100CT-G
MBR2080/90/100CT-1-G
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the lates t
version of the datasheet (s) .
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment ,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users ’ f ail-s a fe precaut ions or other arrangem ent .
3- In no event shall Sensitr on Sem i conduc t or be liable for any damages that may result from an accident or any other caus e during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting
from us e at a value exceeding the absolute m aximum rat i ng.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) m ay not be reproduced or duplicated, in any form , in whole or part, without the expressed writ ten permiss i on of
Sensit ron S em i conduc tor .
7- The products (tec hnolo gies) descr ibed in the datas heet( s) are not to be provided to any party whose purpose in their application will
hinder main tenanc e of int ernat ional peace and safet y nor are they to be applied to that purpose by their direct purc h as ers or any third
party. When exporting these products (t echnologi es ), the nec ess ary procedures are to be taken in accor danc e with related laws and
regulations.
