MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage VR30 V
Continuous Forward Current IF200 mA
Peak Repetitive Forward Current IFRM 300 mA
Forward Surge Current, tp=10ms IFSM 600 mA
Power Dissipation PD250 mW
Operating and Storage
Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 500 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MAX UNITS
IRVR=25V 2.0 µA
VFIF=0.1mA 240 mV
VFIF=1.0mA 320 mV
VFIF=10mA 400 mV
VFIF=30mA 500 mV
VFIF=100mA 800 mV
CdVR=1.0V, f=1.0 MHz 10 pF
trr IF=IR=10mA, Irr=1.0mA, RL=100Ω5.0 ns
CBAT54W
CBAT54AW
CBAT54CW
CBAT54SW
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-323 CASE
Central
Semiconductor Corp.
TM
R0 (24-February 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBAT54W
Series types are Silicon Schottky Diodes in an
SOT-323 Surface Mount Package.
CBAT54W: SINGLE MARKING CODE: C4L
CBAT54AW: DUAL, COMMON ANODE MARKING CODE: C42
CBAT54CW: DUAL, COMMON CATHODE MARKING CODE: C4C
CBAT54SW: DUAL, IN SERIES MARKING CODE: C44
Central
Semiconductor Corp.
TM CBAT54W
CBAT54AW
CBAT54CW
CBAT54SW
SURFACE MOUNT
SILICON SCHOTTKY DIODES
R0 (24-February 2005)
SOT-323 CASE - MECHANICAL OUTLINE
MARKING
CODE: C4C
MARKING
CODE: C44
MARKING
CODE: C4L
MARKING
CODE: C42
CBAT54W CBAT54AW CBAT54CW CBAT54SW
1) Anode 1) Cathode D2 1) Anode D2 1) Anode D2
2) No Connection 2) Cathode D1 2) Anode D1 2) Cathode D1
3) Cathode 3) Anode D1, Anode D2 3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2
LEAD CODE: LEAD CODE: LEAD CODE:
LEAD CODE:
