C106A1 C106D1
C106B1 C106E1
C106C1 C106M1
SILICON CONTROLLED RECTIFIER
4 AMP, 100 THRU 600 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR C106A1 series
are PNPN silicon controlled rectifiers designed for
applications such as temperature, light, speed control,
process and remote control, and warning systems
where reliability of operation is important.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
C106 C106 C106 C106 C106 C106
SYMBOL A1 B1 C1 D1 E1 M1 UNITS
Peak Repetitive Off-State Voltage VDRM, VRRM 100 200 300 400 500 600 V
RMS On-State Current IT(RMS) 4.0 A
Peak One Cycle Surge (60Hz) ITSM
20
A
I2t Value for Fusing (t>1.5ms) I2t 0.5 A2s
Peak Gate Power PGM 0.5 W
Average Gate Power PG(AV) 0.1 W
Peak Forward Gate Current IGFM 0.2 A
Peak Reverse Gate Voltage VGRM 6.0 V
Storage Temperature Tstg -40 to +150 °C
Junction Temperature TJ -40 to +110 °C
Thermal Resistance ΘJC 3.0 °C/W
Thermal Resistance ΘJA 75 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ 10 μA
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=110°C 100 μA
VTM I
FM=4.0A 2.2 V
IGT V
AK=6.0V, RL=100Ω, RGK=1.0KΩ 200 μA
IGT V
AK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C 500 μA
VGT V
AK=6.0V, RL=100Ω, RGK=1.0KΩ 0.4 0.8 V
VGT V
AK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C 0.5 1.0 V
VGT V
AK=Rated VDRM, RL=3.0KΩ, RGK=1.0KΩ, TC=110°C 0.2 V
IHX V
D=12V, RGK=1.0KΩ 0.3 3.0 mA
IHX V
D=12V, RGK=1.0KΩ, TC=-40°C 0.4 6.0 mA
IHX V
D=12V, RGK=1.0KΩ, TC=110°C 0.14 2.0 mA
ILX V
D=12V, RGK=1.0KΩ 0.3 4.0 mA
ILX V
D=12V, RGK=1.0KΩ, TC=-40°C 0.4 8.0 mA
dv/dt VD=Rated VDRM, RGK=1.0KΩ, TC=110°C 8.0 V/μs
tgt (turn-on time) 1.2 μs
tq (turn-off time) 40 μs
TO-202 CASE
R1 (23-January 2012)
www.centralsemi.com
C106A1 C106D1
C106B1 C106E1
C106C1 C106M1
SILICON CONTROLLED RECTIFIER
4 AMP, 100 THRU 600 VOLTS
LEAD CODE:
1) Cathode
2) Anode
3) Gate
Tab is common to pin 2
MARKING:
FULL PART NUMBER
TO-202 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (23-January 2012)
