1.5KE51ARL4G - ON Semiconductor

July, 2005 − Rev. 7 1Publication Order Number:

1N6267A/D

1N6267A Series

1500 Watt Mosorbt Zener

Transient Voltage

Suppressors

Unidirectional*

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high−energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetict axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

Features

•Working Peak Reverse Voltage Range − 5.8 V to 214 V

•Peak Power − 1500 Watts @ 1 ms

•ESD Rating of Class 3 (>16 kV) per Human Body Model

•Maximum Clamp Voltage @ Peak Pulse Current

•Low Leakage < 5 mA Above 10 V

•UL 497B for Isolated Loop Circuit Protection

•Response Time is Typically < 1 ns

•Pb−Free Packages are Available

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16 in from the case for 10 seconds

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use

and best overall value.

AXIAL LEAD

CASE 41A

PLASTIC

A = Assembly Location

1.5KExxxA = ON Device Code

1N6xxxA = JEDEC Device Code

YY = Year

WW = Work Week

= (See Table on Page 3)

G= Pb−Free Package

(Note: Microdot may be in either location)

Cathode Anode

Device Package Shipping†

ORDERING INFORMATION

1.5KExxxA Axial Lead 500 Units/Box

1.5KExxxARL4 Axial Lead 1500/Tape & Reel

1N6xxxA Axial Lead 500 Units/Box

1N6xxxARL4 Axial Lead 1500/Tape & Reel

MARKING DIAGRAM

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† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1.5KE

xxxA

1N6

xxxA

YYWWG

1N6xxxARL4G Axial Lead

(Pb−Free) 1500/Tape & Reel

1N6xxxAG 500 Units/BoxAxial Lead

(Pb−Free)

1.5KExxxARL4G 1500/Tape & ReelAxial Lead

(Pb−Free)

1.5KExxxAG 500 Units/BoxAxial Lead

(Pb−Free)

Uni−Directional TVS

IPP

VRWM

VCVBR VF

1N6267A Series

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MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation (Note 1) @ TL ≤ 25°C PPK 1500 W

Steady State Power Dissipation

@ TL ≤ 75°C, Lead Length = 3/8 in

Derated above TL = 75°C

PD5.0

mW/°C

Thermal Resistance, Junction−to−Lead RqJL 20 °C/W

Forward Surge Current (Note 2) @ TA = 25°C IFSM 200 A

Operating and Storage

Temperature Range TJ, Tstg − 65 to +175 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.

2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

NOTES: Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices

ELECTRICAL CHARACTERISTICS (TA = 25°C unless

otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

QVBR Maximum Temperature Coefficient of VBR

IFForward Current

VFForward Voltage @ IF

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)

Device†

JEDEC

Device†

(Note 4)

VRWM

(Note 5) IR @ VRWM

Breakdown Voltage VC @ IPP (Note 7)

QVBR

VBR (Note 6) (Volts) @ ITVCIPP

(Volts) (mA) Min Nom Max (mA) (Volts) (A) (%/°C)

1.5KE6.8A, G 1N6267A, G 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057

1.5KE7.5A, G 1N6268A, G 6.4 500 7.13 7.5 7.88 10 11.3 132 0.061

1.5KE8.2A, G 1N6269A, G 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065

1.5KE9.1A, G 1N6270A, G 7.78 50 8.65 9.1 9.55 1 13.4 112 0.068

1.5KE10A, G 1N6271A, G 8.55 10 9.5 10 10.5 1 14.5 103 0.073

1.5KE11A, G 1N6272A, G 9.4 5 10.5 11 11.6 1 15.6 96 0.075

1.5KE12A, G 1N6273A, G 10.2 5 11.4 12 12.6 1 16.7 90 0.078

1.5KE13A, G 1N6274A, G 11.1 5 12.4 13 13.7 1 18.2 82 0.081

1.5KE15A, G 1N6275A, G 12.8 5 14.3 15 15.8 1 21.2 71 0.084

1.5KE16A, G 1N6276A, G 13.6 5 15.2 16 16.8 1 22.5 67 0.086

1.5KE18A, G 1N6277A, G 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088

1.5KE20A, G 1N6278A, G 17.1 5 19 20 21 1 27.7 54 0.09

1.5KE22A, G 1N6279A, G 18.8 5 20.9 22 23.1 1 30.6 49 0.092

1.5KE24A, G 1N6280A, G 20.5 5 22.8 24 25.2 1 33.2 45 0.094

1.5KE27A, G 1N6281A, G 23.1 5 25.7 27 28.4 1 37.5 40 0.096

1.5KE30A, G 1N6282A, G 25.6 5 28.5 30 31.5 1 41.4 36 0.097

1.5KE33A, G 1N6283A, G 28.2 5 31.4 33 34.7 1 45.7 33 0.098

1.5KE36A, G 1N6284A, G 30.8 5 34.2 36 37.8 1 49.9 30 0.099

1.5KE39A, G 1N6285A, G 33.3 5 37.1 39 41 1 53.9 28 0.1

1.5KE43A, G 1N6286A, G 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101

1.5KE47A, G 1N6287A, G 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101

1.5KE51A, G 1N6288A, G 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102

1.5KE56A, G 1N6289A, G 47.8 5 53.2 56 58.8 1 77 19.5 0.103

1.5KE62A, G 1N6290A, G 53 5 58.9 62 65.1 1 85 17.7 0.104

1.5KE68A, G 1N6291A, G 58.1 5 64.6 68 71.4 1 92 16.3 0.104

1.5KE75A, G 1N6292A, G 64.1 5 71.3 75 78.8 1 103 14.6 0.105

1.5KE82A, G 1N6293A, G 70.1 5 77.9 82 86.1 1 113 13.3 0.105

1.5KE91A, G 1N6294A, G 77.8 5 86.5 91 95.5 1 125 12 0.106

1.5KE100A, G 1N6295A, G 85.5 5 95 100 105 1 137 11 0.106

1.5KE110A, G 1N6296A, G 94 5 105 110 116 1 152 9.9 0.107

1.5KE120A, G 1N6297A, G 102 5 114 120 126 1 165 9.1 0.107

1.5KE130A, G 1N6298A, G 111 5 124 130 137 1 179 8.4 0.107

1.5KE150A, G 1N6299A, G 128 5 143 150 158 1 207 7.2 0.108

1.5KE160A, G 1N6300A, G 136 5 152 160 168 1 219 6.8 0.108

1.5KE170A, G 1N6301A, G 145 5 162 170 179 1 234 6.4 0.108

1.5KE180A, G 1N6302A, G* 154 5 171 180 189 1 246 6.1 0.108

1.5KE200A, G 1N6303A, G 171 5 190 200 210 1 274 5.5 0.108

1.5KE220A, G 185 5 209 220 231 1 328 4.6 0.109

1.5KE250A, G 214 5 237 250 263 1 344 5 0.109

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

4. Indicates JEDEC registered data

5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or

greater than the dc or continuous peak operating voltage level.

6. VBR measured at pulse test current IT at an ambient temperature of 25°C

7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.

† The “G” suffix indicates Pb−Free package available.

*Not Available in the 1500/Tape & Reel

1N6267A Series

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Figure 1. Pulse Rating Curve

100

0 25 50 75 100 125 150 175 200

PEAK PULSE DERATING IN % OF

PEAK POWER OR CURRENT @ T

A= 25 C°

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Pulse Derating Curve

25 50 75 100 125 150 175 200

PD, STEADY STATE POWER DISSIPATION (WATTS)

TL, LEAD TEMPERATURE (°C)

3/8″

100

001 2 3 4

t, TIME (ms)

, VALUE (%)

PEAK VALUE − IPP

HALF VALUE − IPP

PULSE WIDTH (tP) IS DEFINED AS

THAT POINT WHERE THE PEAK

CURRENT DECAYS TO 50% OF IPP

tr ≤ 10ms

1ms 10ms 100ms1 ms 10 ms

100

, PULSE WIDTH

PPK, PEAK POWER (kW)

NONREPETITIVE

PULSE WAVEFORM

SHOWN IN FIGURE 5

0.1ms

IPP

Figure 3. Capacitance versus Breakdown Voltage

1N6267A/1.5KE6.8A

through

1N6303A/1.5KE200A

VBR, BREAKDOWN VOLTAGE (VOLTS)

1 10 100 1000

10,000

1000

100

C, CAPACITANCE (pF)

MEASURED @ VRWM

MEASURED @

ZERO BIAS

Figure 4. Steady State Power Derating Figure 5. Pulse Waveform

1N6373, ICTE-5, MPTE-5,

through

1N6389, ICTE-45, C, MPTE-45, C

VBR, BREAKDOWN VOLTAGE (VOLTS)

1 10 100 1000

10,000

1000

100

C, CAPACITANCE (pF)

MEASURED @

ZERO BIAS

MEASURED @ VRWM

1N6267A Series

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1N6373, ICTE-5, MPTE-5,

through

1N6389, ICTE-45, C, MPTE-45, C

1.5KE6.8CA

through

1.5KE200CA

Figure 6. Dynamic Impedance

1000

500

200

100

1000

500

200

100

0.3 0.5 0.7 1 2 3 5 7 10 20 30

DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

0.3 0.5 0.7 1 2 3 5 7 10 20 30

DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

IT, TEST CURRENT (AMPS)

VBR(NOM)=6.8 to 13V

TL=25°C

tP=10ms

VBR(NOM)=6.8 to 13V

20V

24V 43V

75V

180V

120V

20V

24V 43V

Figure 7. Typical Derating Factor for Duty Cycle

DERATING FACTOR

1 ms

10 ms

0.7

0.5

0.3

0.05

0.1

0.2

0.01

0.02

0.03

0.07

100 ms

0.1 0.2 0.5 2 5 10 501 20 100

D, DUTY CYCLE (%)

PULSE WIDTH

10 ms

TL=25°C

tP=10ms

IT, TEST CURRENT (AMPS)

APPLICATION NOTES

RESPONSE TIME

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be

protected. In this situation, there is a time delay associated

with the capacitance of the device and an overshoot

condition associated with the inductance of the device and

the inductance of the connection method. The capacitance

effect is of minor importance in the parallel protection

scheme because it only produces a time delay in the

transition from the operating voltage to the clamp voltage as

shown in Figure 8.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero

current to full current) and lead inductance. This inductive

effect produces an overshoot in the voltage across the

equipment or component being protected as shown in

Figure 9. Minimizing this overshoot is very important in the

application, since the main purpose for adding a transient

suppressor is to clamp voltage spikes. These devices have

excellent response time, typically in the picosecond range

and negligible inductance. However, external inductive

effects could produce unacceptable overshoot. Proper

circuit layout, minimum lead lengths and placing the

suppressor device as close as possible to the equipment or

components to be protected will minimize this overshoot.

Some input impedance represented by Zin is essential to

prevent overstress of the protection device. This impedance

should be as high as possible, without restricting the circuit

operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions

and at a lead temperature of 25°C. If the duty cycle increases,

the peak power must be reduced as indicated by the curves

of Figure 7. Average power must be derated as the lead or

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ambient temperature rises above 25°C. The average power

derating curve normally given on data sheets may be

normalized and used for this purpose.

At first glance the derating curves of Figure 7 appear to be

in error as the 10 ms pulse has a higher derating factor than

the 10 ms pulse. However, when the derating factor for a

given pulse of Figure 7 is multiplied by the peak power value

of Figure 1 for the same pulse, the results follow the

expected trend.

TYPICAL PROTECTION CIRCUIT

Vin

Vin (TRANSIENT)

Zin

LOAD

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

Figure 8. Figure 9.

UL RECOGNITION*

The entire series has Underwriters Laboratory

Recognition for the classification of protectors (QVGV2)

under the UL standard for safety 497B and File #116110.

Many competitors only have one or two devices recognized

or have recognition in a non-protective category. Some

competitors have no recognition at all. With the UL497B

recognition, our parts successfully passed several tests

including Strike Voltage Breakdown test, Endurance

Conditioning, Temperature test, Dielectric Voltage-

Withstand test, Discharge test and several more.

Whereas, some competitors have only passed a

flammability test for the package material, we have been

recognized for much more to be included in their Protector

category.

*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA

CLIPPER BIDIRECTIONAL DEVICES

1. Clipper-bidirectional devices are available in the

1.5KEXXA series and are designated with a “CA”

suffix; for example, 1.5KE18CA. Contact your nearest

ON Semiconductor representative.

2. Clipper-bidirectional part numbers are tested in both

directions to electrical parameters in preceding table

(except for VF which does not apply).

3. The 1N6267A through 1N6303A series are JEDEC

registered devices and the registration does not include

a “CA” suffix. To order clipper-bidirectional devices

one must add CA to the 1.5KE device title.

1N6267A Series

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OUTLINE DIMENSIONS

MOSORB

CASE 41A−04

ISSUE D

DIM

MIN MAX MIN MAX

MILLIMETERS

0.335 0.374 8.50 9.50

INCHES

B0.189 0.209 4.80 5.30

D0.038 0.042 0.96 1.06

K1.000 −−− 25.40 −−−

P−−− 0.050 −−− 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD FINISH AND DIAMETER UNCONTROLLED

IN DIMENSION P.

4. 041A−01 THRU 041A−03 OBSOLETE, NEW

STANDARD 041A−04.

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ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

1N6267A/D

Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.

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