REV. G
a
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
*
15 kV ESD Protected, 2.7 V to 3.6 V
Serial Port Transceivers with Green Idle
™
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved.
*Protected by U.S.Patent No. 5,606,491.
FEATURES
Green Idle Power-Saving Mode
Single 2.7 V to 3.6 V Power Supply
Operates with 3 V Logic
0.1 F to 1 F Charge Pump Capacitors
Low EMI
Low Power Shutdown: 20 nA
Full RS-232 Compliance
460 kbits/s Data Rate
1 Receiver Active in Shutdown (2 for ADM3310E)
ESD >15 kV IEC 1000-4-2 on RS-232 I/Os (ADM33xxE)
ESD >15 kV IEC 1000-4-2 on CMOS and RS-232 I/Os
(ADM3307E)
APPLICATIONS
Mobile Phone Handsets/Data Cables
Laptop and Notebook Computers
Printers
Peripherals
Modems
PDAs/Hand-Held Devices/Palmtop Computers
GENERAL DESCRIPTION
The ADM33xxE line of driver/receiver products is designed to
fully meet the EIA-232 standard while operating with a single
2.7 V to 3.6 V power supply. The devices feature an on-board
charge pump dc-to-dc converter, eliminating the need for dual
power supplies. This dc-to-dc converter contains a voltage
tripler and a voltage inverter that internally generates positive
and negative supplies from the input 3 V power supply. The dc-
to-dc converter operates in Green Idle mode, whereby the charge
pump oscillator is gated ON and OFF to maintain the output
voltage at ±7.25 V under varying load conditions. This minimizes
the power consumption and makes these products ideal for
battery-powered portable devices.
The ADM33xxE devices are suitable for operation in harsh elec-
trical environments and contain ESD protection up to ±15 kV
on their RS-232 lines (ADM3310E, ADM3311E, ADM3312E,
and ADM3315E). The ADM3307E contains ESD protection
up to ±15 kV on all I/O lines (CMOS, RS-232, EN, and SD).
A shutdown facility that reduces the power consumption to
66 nW is also provided. While in shutdown, one receiver remains
active (two receivers active with ADM3310E), thereby allowing
monitoring of peripheral devices. This feature allows the device
to be shut down until a peripheral device begins communication.
The active receiver can alert the processor, which can then take
the ADM33xxE device out of the shutdown mode.
The ADM3307E contains five drivers and three receivers and is
intended for mobile phone data lump cables and portable com-
puting applications.
The ADM3311E contains three drivers and five receivers and is
intended for serial port applications on notebook/laptop computers.
The ADM3310E is a low current version of the ADM3311E. This
device also allows two receivers to be active in shutdown mode.
The ADM3312E contains three drivers and three receivers and is
intended for serial port applications, PDAs, mobile phone data
lump cables, and other hand-held devices.
The ADM3315E is a low current version of the ADM3312E,
with a 22 kW receiver input resistance that reduces the drive
requirements of the DTE. Its main applications are PDAs,
palmtop computers, and mobile phone data lump cables.
The ADM33xxE devices are fabricated using CMOS technology
for minimal power consumption. All parts feature a high level
of overvoltage protection and latch-up immunity.
All ADM33xxE devices are available in a 32-lead 5 mm ¥ 5 mm
LFCSP package and in a TSSOP package (ADM3307E,
ADM3310E, and ADM3311E in a 28-lead TSSOP; ADM3312E
and ADM3315E in a 24-lead TSSOP). The ADM3311E also
comes in a 28-lead SSOP package.
The ADM33xxE devices are ruggedized RS-232 line drivers/
receivers that operate from a single supply of 2.7 V to 3.6 V.
Step-up voltage converters coupled with level shifting transmitters
and receivers allow RS-232 levels to be developed while operating
from a single supply. Features include low power consumption,
Green Idle operation, high transmission rates, and compatibility
with the EU directive on electromagnetic compatibility. This EM
compatibility directive includes protection against radiated and
conducted interference, including high levels of electrostatic
discharge.
All RS-232 (and CMOS, SD, and EN for ADM3307E) inputs and
outputs are protected against electrostatic discharges (up to ±15 kV).
This ensures compliance with IEC 1000-4-2 requirements.
These devices are ideally suited for operation in electrically harsh
environments or where RS-232 cables are frequently being
plugged/unplugged. They are also immune to high RF field
strengths without special shielding precautions.
Emissions are also controlled to within very strict limits. CMOS
technology is used to keep the power dissipation to an absolute
minimum, allowing maximum battery life in portable applications.
REV. G
–2–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
FUNCTIONAL BLOCK DIAGRAMS
V
CC
0.1F
CERAMIC
10F
TANTALUM
CMOS
INPUTS
1
R1
OUT
R3
R1
R2
CMOS
OUTPUTS
T5
IN
T5
T4
IN
T4
T1
IN
T1
OUT
T1
T3
IN
T2
IN
SHUTDOWN
INPUT
ADM3307E
SD
V
C1+
C1
C2
0.1F
V–
C3+
V
CC
EN
GND
C4
0.1F
ENABLE
INPUT
C2
C3–
C2+
VOLTAGE
TRIPLER/
INVERTER
3V TO
9V
C1
0.1F
C3
0.1F
R2
OUT
R3
OUT
NOTES
1
INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT.
2
INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
EIA/TIA-232
OUTPUTS
T2
OUT
T3
OUT
T4
OUT
T5
OUT
R1
OUT
C5
0.1F
T3
T2
R2
OUT
R3
OUT
EIA/TIA-232
INPUTS
2
V
CC
0.1F
CERAMIC
10F
TANTALUM
CMOS
INPUTS
1
R1
OUT
R5
R3
R4
EIA/TIA-232
INPUTS
2
CMOS
OUTPUTS
T1
IN
T1
OUT
T1
T3
IN
T2
IN
SHUTDOWN
INPUT
ADM3310E/
ADM3311E
V
C1+
C2V–
C3+
EN
GND
C4
0.1F
ENABLE
INPUT
C3–
C2+
VOLTAGE
TRIPLER /
INVERTER
3V TO
9V
C1
0.1F
C3
0.1F
R2
OUT
R3
OUT
EIA/TIA-232
OUTPUTS
T2
OUT
T3
OUT
R1
IN
C5
0.1F
T3
T2
C1–
SD
R2
R1
R2
IN
R3
IN
R4
IN
R5
IN
R4
OUT
R5
OUT
V
CC
C2
0.1F
NOTES
1
INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT.
2
INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
VCC
0.1F
CERAMIC
10F
TANTALUM
CMOS
INPUTS1
R1OUT
R3
CMOS
OUTPUTS
T1IN T1OUT
T1
T3IN
T2IN
SHUTDOWN
INPUT
ADM3312E/
ADM3315E
V
C1+
C2V–
C3+
EN
GND
C4
0.1F
ENABLE
INPUT
C3–
C2+
VOLTAGE
TRIPLER /
INVERTER
3V TO
9V
C1
0.1F
C3
0.1F
R2OUT
R3OUT
EIA/TIA-232
OUTPUTS
T2OUT
T3OUT
R1IN
C5
0.1F
T3
T2
C1–
SD
R2
R1
R2IN
R3IN
VCC
C2
0.1F
NOTES
1INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT.
2INTERNAL 5k (22kFOR ADM3315E) PULL-DOWN RESISTOR
ON EACH RS-232 INPUT.
EIA/TIA-232
INPUTS2
REV. G –3–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
Parameter Min Typ Max Unit Test Conditions/Comments
Operating Voltage Range 2.7 3.3 3.6 V
V
CC
Power Supply Current
ADM3307E 0.75 1.5 mA V
CC
= 3.0 V to 3.6 V; No Load
0.75 4.5 mA V
CC
= 2.7 V to 3.6 V; No Load
ADM3311E, ADM3312E 0.45 1 mA No Load; V
CC
= 3.0 V to 3.6 V; T
A
= 0∞C
to 85∞C
0.45 4.5 mA No Load; V
CC
= 2.7 V to 3.6 V; T
A
= – 40∞C
to +85∞C
ADM3310E, ADM3315E 0.35 0.85 mA V
CC
= 2.7 V to 3.6 V; No Load
ADM3310E, ADM3311E, 35 mA R
L
= 3 kW to GND on all T
OUTS
ADM3312E, ADM3315E
Shutdown Supply Current 0.02 1 mA
Input Pull-Up Current 10 25 mAT
IN
= GND
Input Leakage Current, SD, EN 0.02 ±1mA
Input Logic Threshold Low, V
INL
0.8 V T
IN
,
EN, SHDN
0.4 V T
IN
, EN, SHDN; V
CC
= 2.7 V
Input Logic Threshold High, V
INH
2.0 V T
IN
, EN, SHDN
CMOS Output Voltage Low, V
OL
0.4 V I
OUT
= 1.6 mA
CMOS Output Voltage High, V
OH
V
CC
– 0.6 V I
OUT
= –200 mA
CMOS Output Leakage Current
ADM3307E 0.04 ±1mAEN = V
CC
, 0 V < R
OUT
< V
CC
ADM3310E, ADM3311E 0.05 ±5mAEN = V
CC
, 0 V < R
OUT
< V
CC
ADM3312E, ADM3315E
Charge Pump Output Voltage, V+ +7.25 V No Load
ADM3307E, ADM3311E, ADM3312E
Charge Pump Output Voltage, V––7.25 V No Load
ADM3307E, ADM3311E, ADM3312E
Charge Pump Output Voltage, V+ +6.5 V No Load
ADM3310E, ADM3315E
Charge Pump Output Voltage, V––6.5 V No Load
ADM3310E, ADM3315E
EIA-232 Input Voltage Range –25 +25 V
EIA-232 Input Threshold Low 0.4 1.3 V
EIA-232 Input Threshold High 2.0 2.4 V
EIA-232 Input Hysteresis 0.14 V
EIA-232 Input Resistance
ADM3307E, ADM3310E, ADM3311E, 3 5 7 kW
ADM3312E
ADM3315E 14 22 31 kW
SPECIFICATIONS
(VCC = 2.7 V to 3.6 V, C1–C5 = 0.1 F. All specifications TMIN to TMAX, unless otherwise noted.)
REV. G
–4–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
SPECIFICATIONS
(continued)
ABSOLUTE MAXIMUM RATINGS*
(T
A
= 25∞C, unless otherwise noted)
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +4 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V
CC
– 0.3 V) to +9 V
V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –9 V
Input Voltages
T
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
R
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30 V
Output Voltages
T
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15 V
R
OUT
. . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (V
CC
+ 0.3 V)
Short Circuit Duration
T
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Thermal Impedance, q
JA
CP-32 LFCSP . . . . . . . . . . . . . . . . . . . . . . . . . . . 32.5∞C/W
RU-28 TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.0∞C/W
RU-24 TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.0∞C/W
RS-28 SSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . .76.0∞C/W
Operating Temperature Range
Industrial (A Version) . . . . . . . . . . . . . . . . . . –40∞C to +85∞C
Storage Temperature Range . . . . . . . . . . –65∞C to +150∞C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300∞C
ESD Rating (IEC 1000-4-2 Air) (RS-232 I/Os) . . . . . . . ±15 kV
ESD Rating (IEC 1000-4-2 Contact) (RS-232 I/Os) . . . . ±8 kV
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Parameter Min Typ Max Unit Test Conditions/Comments
Output Voltage Swing
ADM3310E, ADM3315E ±5.0 ±5.5 V All Transmitter Outputs Loaded with
3kW to Ground
ADM3307E, ADM3311E, ADM3312 ±5.0 ±6.4 V (V
CC
= 3.0 V)
±5.5 V (V
CC
= 2.7 V)
All Transmitter Outputs Loaded with
3kW to Ground
Transmitter Output Resistance 300 WV
CC
= 0 V, V
OUT
= ±2 V
RS-232
Output Short Circuit Current ±15 ±60 mA
Maximum Data Rate
ADM3307E 250 720 kbps R
L
= 3 kW to 7 kW, C
L
= 50 pF to 1000 pF,
V
CC
= 2.7 V
460 920 kbps R
L
= 3 kW to 7 kW, C
L
= 50 pF to 1000 pF,
V
CC
= 3.0 V
ADM3310E, ADM3311E, ADM3312E 250 460 kbps R
L
= 3 kW to 7 kW, C
L
= 50 pF to 1000 pF,
ADM3315E V
CC
= 3.0 V
Receiver Propagation Delay, T
PHL
, T
PLH
0.3 msC
L
= 150 pF
0.17 1 msC
L
= 150 pF; ADM3307E Only
Receiver Output Enable Time, t
ER
100 ns
Receiver Output Disable Time, t
DR
300 ns
Transmitter Propagation Delay, T
PHL
, T
PLH
500 ns R
L
= 3 kW, C
L
= 1000 pF
Transition Region Slew Rate 3 18 V/msR
L
= 3 kW, C
L
= 50 pF to 1000 pF
1
ESD PROTECTION (I/O PINS) ±15 kV Human Body Model
±15 kV IEC 1000-4-2 Air Discharge
±8kVIEC 1000-4-2 Contact Discharge
2
NOTES
1
Measured at +3 V to –3 V or –3 V to +3 V.
2
Includes CMOS I/O, SD, and EN for ADM3307E.
Specification subject to change without notice.
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
–5–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADM33xxE feature proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Model Temperature Range Package Description Package Option
ADM3307EARU –40∞C to +85∞C28-Lead Thin Shrink Small Outline (TSSOP) RU-28
ADM3307EARU-REEL –40∞C to +85∞CTape and Reel RU-28
ADM3307EARU-REEL7 –40∞C to +85∞CTape and Reel RU-28
ADM3307EACP –40∞C to +85∞C32-Lead
5 mm ¥ 5 mm
Lead Frame
Chip Scale
Package (LFCSP) CP-32-2
ADM3307EACP-REEL –40∞C to +85∞CTape and Reel RU-28
ADM3307EACP-REEL7 –40∞C to +85∞CTape and Reel RU-28
ADM3310EARU –40∞C to +85∞C28-Lead Thin Shrink Small Outline (TSSOP) RU-28
ADM3310EARU-REEL –40∞C to +85∞CTape and Reel RU-28
ADM3310EARU-REEL7 –40∞C to +85∞CTape and Reel RU-28
ADM3310EACP –40∞C to +85∞C32-Lead
5 mm ¥ 5 mm
Lead Frame
Chip Scale
Package (LFCSP) CP-32-2
ADM3310EACP-REEL –40∞C to +85∞CTape and Reel CP-32-2
ADM3310EACP-REEL7 –40∞C to +85∞CTape and Reel CP-32-2
ADM3311EARS –40∞C to +85∞C28-Lead Shrink Small Outline (SSOP) RS-28
ADM3311EARS-REEL –40∞C to +85∞CTape and Reel RS-28
ADM3311EARS-REEL7 –40∞C to +85∞CTape and Reel RS-28
ADM3311EARZ*–40∞C to +85∞C28-Lead Shrink Small Outline (SSOP) RS-28
ADM3311EARZ-REEL*–40∞C to +85∞CTape and Reel RS-28
ADM3311EARZ-REEL7*–40∞C to +85∞CTape and Reel RS-28
ADM3311EARU –40∞C to +85∞C28-Lead Thin Shrink Small Outline (TSSOP) RU-28
ADM3311EARU-REEL –40∞C to +85∞CTape and Reel RU-28
ADM3311EARU-REEL7 –40∞C to +85∞CTape and Reel RU-28
ADM3311EACP –40∞C to +85∞C32-Lead
5 mm ¥ 5 mm
Lead Frame
Chip Scale
Package (LFCSP) CP-32-2
ADM3312EARU –40∞C to +85∞C24-Lead Thin Shrink Small Outline (TSSOP) RU-24
ADM3312EARU-REEL –40∞C to +85∞CTape and Reel RU-24
ADM3312EARU-REEL7 –40∞C to +85∞CTape and Reel RU-24
ADM3312EACP –40∞C to +85∞C32-Lead
5 mm ¥ 5 mm
Lead Frame
Chip Scale
Package (LFCSP) CP-32-2
ADM3312EACP-REEL –40∞C to +85∞CTape and Reel CP-32-2
ADM3312EACP-REEL7 –40∞C to +85∞CTape and Reel CP-32-2
ADM3315EARU –40∞C to +85∞C24-Lead Thin Shrink Small Outline (TSSOP) RU-24
ADM3315EARU-REEL –40∞C to +85∞CTape and Reel RU-24
ADM3315EARU-REEL7 –40∞C to +85∞CTape and Reel RU-24
ADM3315EARUZ*–40∞C to +85∞C24-Lead Thin Shrink Small Outline (TSSOP) RU-24
ADM3315EARUZ-REEL*–40∞C to +85∞CTape and Reel RU-24
ADM3315EARUZ-REEL7*–40∞C to +85∞CTape and Reel RU-24
ADM3315EACP –40∞C to +85∞C32-Lead
5 mm ¥ 5 mm
Lead Frame
Chip Scale
Package (LFCSP) CP-32-2
ADM3315EACP-REEL –40∞C to +85∞CTape and Reel CP-32-2
ADM3315EACP-REEL7 –40∞C to +85∞CTape and Reel CP-32-2
*
Z = Pb-free part.
PRODUCT SELECTION GUIDE
No. Rx I
CC
Supply Active 15 kV I
CC
Shutdown
Generic Voltage Tx Rx in SD Speed ESD Max Max*Additional Features
ADM3307E 2.7 V to 3.6 V 5 3 1 1 Mbps RS-232 1.5 mA 1 mA±15 kV ESD Protection
CMOS CMOS on RS-232 and
EN and SD CMOS I/Os including
SD and EN Pins.
ADM3310E 2.7 V to 3.6 V 3 5 2 460 kbps RS-232 0.85 mA 1 mA2 Rxs Active in Shutdown.
Green Idle Mode
Level 6 V. Low power
ADM3311E.
ADM3311E 2.7 V to 3.6 V 3 5 1 460 kbps RS-232 1 mA 1 mA
ADM3312E 2.7 V to 3.6 V 3 3 1 460 kbps RS-232 1 mA 1 mA
ADM3315E 2.7 V to 3.6 V 3 3 1 460 kbps RS-232 0.85 mA 1 mA22 kW Rx I/P
Resistance. Green Idle
Mode Level 6 V. Low power
ADM3312E.
*I
CC
Shutdown is 20 nA typically.
REV. G
–6–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
PIN CONFIGURATIONS
128
C2
V
2
3
7
27
26
22
8
9
10
21
20
19
11
12
18
17
4
5
25
24
623
13
14
16
15 R3IN
R1IN
T1OUT
T2OUT
T3OUT
V
C1
C3
C3
GND
R2IN
T5OUT
T4OUT
R3OUT
VCC
C1
SD
R1OUT
T3IN
R2OUT
T1IN
T2IN
EN
C2
T4IN
T5IN
ADM3307E
TOP VIEW
(Not to Scale)
ADM3307E
TOP VIEW
(Not to Scale)
24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
18
19
20
21
22
25
26
28
29
30
31
32
R2OUT
R1OUT
NC
NC
R3IN
R2IN
R3OUT
R1IN
T4IN
T3IN
T2IN
T1IN
NC
SD
EN
T5IN
T4OUT
T2OUT
T1OUT
GND
V–
T3OUT
GND
C1+
C3+
C2+
C2–
VCC
V+
C3–
C1–
PIN 1
IDENTIFIER
27
23
17 T5OUT
ADM3307E
128
C3
V
2
3
7
27
26
22
8
9
10
21
20
19
11
12
18
17
4
5
25
24
623
13
14
16
15
R3
IN
R1
IN
T1
OUT
T2
OUT
T3
OUT
V
SD
C1
C3
GND
R2
IN
R5
OUT
C2
C2
R3
OUT
T3
IN
R4
OUT
T1
IN
T2
IN
EN
V
CC
ADM3310E/
ADM3311E
TOP VIEW
(Not to Scale)
C1
R1
OUT
R2
OUT
R5
IN
R4
IN
ADM3310E/
ADM3311E
TOP VIEW
(Not to Scale
)
24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
18
19
20
21
22
25
26
28
29
30
31
32
R4
OUT
R3
OUT
NC
NC
R5
IN
R4
IN
R5
OUT
R3
IN
R1
OUT
T3
IN
T2
IN
T1
IN
EN
R1
IN
T2
OUT
T1
OUT
SD
T3
OUT
GND
C1+
C3+
C2+
C2–
V
CC
V+
C3–
C1–
PIN 1
IDENTIFIER
27
23
17
V–
NC
R2
IN
NC
R2
OUT
ADM3310E/ADM3311E
1C3
V
2
3
7
22
8
9
10
21
20
19
11
12
18
17
4
5
24
6
23
R3IN
R1IN
T1OUT
T2OUT
T3OUT
V
SD
C1
C3
GND
R2IN
C2
C2
R3OUT
T3IN
T1IN
T2IN
EN
VCC
ADM3312E/
ADM3315E
TOP VIEW
(Not to Scale)
C1
R1OUT
R2OUT
16
15
14
13
ADM3312E/
ADM3315E
TOP VIEW
(Not to Scale
)
24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
18
19
20
21
22
25
26
28
29
30
31
32
R2
OUT
R1OUT
NC
NC
R3IN
R2IN
R3OUT
R1IN
T3IN
T2IN
T1IN
EN
NC
T2OUT
T1OUT
SD
T3OUT
GND
C1+
C3+
C2+
C2–
VCC
V+
C3–
C1–
PIN 1
IDENTIFIER
27
23
17
V–
NCNC
NC
NC
NC
ADM3312E/ADM3315E
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
–7–
PIN FUNCTION DESCRIPTIONS
Mnemonic Function
V
CC
Power Supply Input 2.7 V to 3.6 V.
V+ Internally Generated Positive Supply, 7.25 V (6.5 V nominal for ADM3310E, ADM3315E). Capacitor C4 is
connected between V
CC
and V+.
V–Internally Generated Positive Supply, –7.25 V (–6.5 V nominal for ADM3310E, ADM3315E). Capacitor C5 is
connected between GND and V–.
GND Ground Pin. Must be connected to 0 V.
C1+, C1–External Capacitor 1 is connected between these pins. A 0.1 mF capacitor is recommended, but larger capacitors
up to 1 mF may be used.
C2+, C2–External Capacitor 2 is connected between these pins. A 0.1 mF capacitor is recommended, but larger capacitors
up to 1 mF may be used.
C3+, C3–External Capacitor 3 is connected between these pins. A 0.1 mF capacitor is recommended, but larger capacitors
up to 1 mF may be used.
T
IN
Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 kW pull-up resistor to
V
CC
is connected on each input.
T
OUT
Transmitter (Driver) Outputs. Typically ±5.5 V (±6.4 V for ADM3311E and ADM3312E)
R
IN
Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 kW pull-down resistor (22 kW for ADM3315E)
to GND is connected on each of these inputs.
R
OUT
Receiver Outputs. These are TTL/CMOS levels.
EN Receiver Enable. A high level three-states all the receiver outputs.
SD Shutdown Control. A high level disables the charge pump and reduces the quiescent current to less than 1 mA.
All transmitters and most receivers are disabled. One receiver remains active in shutdown (two receivers active
in shutdown for the ADM3310E).
• ADM3307E R
OUT
3 active in shutdown
• ADM3310E R
OUT
4 and R
OUT
5
active in shutdown
• ADM3311E R
OUT
5 active in shutdown
• ADM3312E R
OUT
3 active in shutdown
• ADM3315E R
OUT
3 active in shutdown
Table I. ADM3307E Truth Table
SD EN Status T
OUT
1–5 R
OUT
1–2 R
OUT
3
00 Normal Enabled Enabled Enabled
Operation
01 Normal Enabled Disabled Disabled
Operation
10 Shutdown Disabled Disabled Enabled
11 Shutdown Disabled Disabled Disabled
Table II. ADM3310E Truth Table
SD EN Status T
OUT
1–3 R
OUT
1–3 R
OUT
4–5
00 Normal Enabled Enabled Enabled
Operation
01 Receivers Enabled Disabled Disabled
Disabled
10 Shutdown Disabled Disabled Enabled
11 Shutdown Disabled Disabled Disabled
Table IV. ADM3312E/ADM3315E Truth Table
SD EN Status T
OUT
1–3 R
OUT
1–2 R
OUT
3
00 Normal Enabled Enabled Enabled
Operation
01 Normal Enabled Disabled Disabled
Operation
10 Shutdown Disabled Disabled Enabled
11 Shutdown Disabled Disabled Disabled
Table III. ADM3311 Truth Table
SD EN Status T
OUT
1–3 R
OUT
1–4 R
OUT
5
00 Normal Enabled Enabled Enabled
Operation
01 Receivers Enabled Disabled Disabled
Disabled
10 Shutdown Disabled Disabled Enabled
11 Shutdown Disabled Disabled Disabled
REV. G
–8–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
V
SD
TPC 1. Charge Pump V+ Exiting Shutdown
SD
V
TPC 2. Charge Pump V– Exiting Shutdown
9
7
5
3
1
–1
–3
–5
–7
–9
0 5 10 15 20
LOAD CURRENT – mA
V+/V– – V
V+
V–
TPC 3. Charge Pump V+, V– vs. Load Current
(V
CC
= 3.3 V)
9
7
5
3
1
–1
–3
–5
–7
0 200 400 600 800 1000
TOUTHIGH
TOUTLOW
LOAD CAPACITANCE – pF
Tx O/P – V
TPC 4. Transmitter Output vs. Load Capacitance
(V
CC
= 3.3 V, Data Rate = 460 kbps)
LOAD CAPACITANCE – pF
40
0
SLEW RATE – V/s
35
30
25
20
15
10
5
0
2500200015001000500
TPC 5. Slew Rate vs. Load Capacitance (V
CC
= 3.3 V)
25
20
15
10
5
0
0 200 400 600 800 1000 1200
I
CC
– mA
LOAD CAPACITANCE – pF
TPC 6. Supply Current vs. Load Capacitance (R
L
= 3 k
W
)
(V
CC
= 3.3 V, Data Rate = 460 kbps)
Typical Performance Characteristics
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
–9–
25
20
15
10
5
0
0 200 400 600 800 1000 1200
I
CC
– mA
LOAD CAPACITANCE – pF
TCP 7. Supply Current vs. Load Capacitance (R
L
= Infinite)
(V
CC
= 3.3 V, Data Rate = 460 kbps)
LOAD CAPACITANCE – pF
0 600200 400
10
12
SUPPLY CURRENT – mA
800 1000
14
16
18
20
22
24
26
28
30
460kbps
250kbps
125kbps
TPC 8. Supply Current vs. Load Capacitance
(V
CC
= 3.3 V, R
L
= 5 k
W
)
SD
TX O/P
HIGH
TPC 9. Transmitter Output (High) Exiting Shutdown
SD
TX O/P LOW
TPC 10. Transmitter Output (Low) Exiting Shutdown
10
8
6
4
2
0
–2
–4
–6
–8
–10
0200 400 600 800 1000
Tx
OUT
VOLTAGE – V
LOAD CAPACITANCE – pF
TPC 11. Transmitter Output Voltage High/Low vs. Load
Capacitance (V
CC
= 3.3 V, CLK = 1 Mb/s, R
L
= 5 k
W
, ADM3307E)
300
250
200
150
100
50
00 5 10 15 20
OSCILLATOR FREQUENCY – kHz
LOAD CURRENT – mA
TPC 12. Oscillator Frequency vs. Load Current
REV. G
–10–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
600
500
400
300
200
100
0
2.6 2.8 3.0 3.2 3.4 3.6
ICC – A
VCC – V
TCP 13. I
CC
vs. V
CC
(Unloaded)
ICC – mA
25
20
15
10
5
0
2.6 2.8 3.0 3.2 3.4 3.6
VCC – V
TPC 14. I
CC
vs. V
CC
(R
L
= 3 k
W
)
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
–11–
CIRCUIT DESCRIPTION
The internal circuitry consists mainly of four sections. These
include the following:
1. A charge pump voltage converter
2. 3.3 V logic to EIA-232 transmitters
3. EIA-232 to 3.3 V logic receivers
4. Transient protection circuit on all I/O lines
Charge Pump DC-to-DC Voltage Converter
The charge pump voltage converter consists of a 250 kHz (300 kHz
for ADM3307E) oscillator and a switching matrix. The converter
generates a ±9 V supply from the input 3.0 V level. This is done
in two stages using a switched capacitor technique, as illustrated.
First, the 3.0 V input supply is tripled to 9.0 V using capacitor
C4 as the charge storage element. The +9.0 V level is then
inverted to generate –9.0 V using C5 as the storage element.
However, it should be noted that, unlike other charge pump dc-to-
dc converters, the charge pump on the ADM3307E does not run
open-loop. The output voltage is regulated to ±7.25 V (or ±6.5 V
for the ADM3310E and ADM3315E) by the Green Idle circuit
and never reaches ±9 V in practice. This saves power as well as
maintains a more constant output voltage.
++
INTERNAL
OSCILLATOR
GND
C2C1
S1
S2
S3
S4
VCC
+
C4
V+ = 3VCC
VCC
VCC
S5
S6
S7
Figure 1. Charge Pump Voltage Tripler
The tripler operates in two phases. During the oscillator low
phase, S1 and S2 are closed and C1 charges rapidly to V
CC
.
S3, S4, and S5 are open, and S6 and S7 are closed.
During the oscillator high phase, S1 and S2 are open, and S3
and S4 are closed, so the voltage at the output of S3 is 2V
CC
.
This voltage is used to charge C2. In the absence of any dis-
charge current, C2 charges up to 2V
CC
after several cycles.
During the oscillator high phase, as previously mentioned, S6
and S7 are closed, so the voltage at the output of S6 is 3V
CC
.
This voltage is then used to charge C3. The voltage inverter
is illustrated in Figure 2.
FROM
VOLTAGE
TRIPLER
++
INTERNAL
OSCILLATOR
GND
C5
C3
S8
S9
S10
S11
V+ GND
V– = – (V+)
Figure 2. Charge Pump Voltage Inverter
During the oscillator high phase, S10 and S11 are open, while
S8 and S9 are closed. C3 is charged to 3V
CC
from the output of
the voltage tripler over several cycles. During the oscillator low
phase, S8 and S9 are open, while S10 and S11 are closed. C3 is
connected across C5, whose positive terminal is grounded and
whose negative terminal is the V– output. Over several cycles,
C5 charges to –3 V
CC
.
The V+ and V– supplies may also be used to power external
circuitry if the current requirements are small. Please refer to
TPC 3 in the Typical Performance Characteristics section.
What Is Green Idle?
Green Idle is a method of minimizing power consumption under
idle (no transmit) conditions while still maintaining the ability to
transmit data instantly.
How Does it Work?
Charge pump type dc-to-dc converters used in RS-232 line drivers
normally operate open-loop, i.e., the output voltage is not regu-
lated in any way. Under light load conditions, the output voltage
is close to twice the supply voltage for a doubler and three times
the supply voltage for a tripler, with very little ripple. As the load
current increases, the output voltage falls and the ripple voltage
increases.
Even under no-load conditions, the oscillator and charge pump
operate at a very high frequency with consequent switching losses
and current drain.
Green Idle works by monitoring the output voltage and maintain-
ing it at a constant value of around 7 V*. When the voltage rises
above 7.25 V** the oscillator is turned off. When the voltage falls
below 7 V*, the oscillator is turned on and a burst of charging
pulses is sent to the reservoir capacitor. When the oscillator is
turned off, the power consumption of the charge pump is virtu-
ally zero, so the average current drain under light load conditions
is greatly reduced.
A block diagram of the Green Idle circuit is shown in Figure 3.
Both V+ and V– are monitored and compared to a reference
voltage derived from an on-chip band gap device. If either V+
or V– fall below 7 V*, the oscillator starts up until the
voltage rises above 7.25
V**.
V– VOLTAGE
COMPARATOR
WITH 250mV
HYSTERESIS
BAND GAP
VOLTAGE
REFERENCE
V+ VOLTAGE
COMPARATOR
WITH 250mV
HYSTERESIS
TRANSCEIVERS
CHARGE
PUMP
START/STOP
START/STOP
V+
V–
SHUTDOWN
Figure 3. Block Diagram of Green Idle Circuit
NOTES
*For ADM3310E and ADM3315E, replace with 6.25 V.
**For ADM3310E and ADM3315E, replace with 6.5 V.
REV. G
–12–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
The operation of Green Idle for V+ under various load conditions
is illustrated in Figure 4. Under light load conditions, C1 is
maintained in a charged condition, and only a single oscillator
pulse is required to charge up C2. Under these conditions, V+
may actually overshoot 7.25 V** slightly.
OSC
7V
2
7.25V
1
V+
OVERSHOOT
LIGHT
LOAD
MEDIUM
LOAD
HEAVY
LOAD
OSC
7V
2
7.25V
1
V+
OSC
7V
2
7.25V
1
V+
NOTES
1FOR ADM3310E AND ADM3315E REPLACE WITH 6.5V.
2FOR ADM3310E AND ADM3315E REPLACE WITH 6.25V.
Figure 4. Operation of Green Idle under Various Load
Conditions
Under medium load conditions, it may take several cycles for C2
to charge up to 7.25 V**. The average frequency of the oscillator
is higher because there are more pulses in each burst and the
bursts of pulses are closer together and more frequent.
Under high load conditions, the oscillator is on continuously if
the charge pump output cannot reach 7.25 V**.
Green Idle Versus Shutdown
Shutdown mode minimizes power consumption by shutting down
the charge pump altogether. In this mode, the switches in the
voltage tripler are configured so V+ is connected directly to V
CC
.
V– is zero because there is no charge pump operation to charge C5.
This means there is a delay when coming out of Shutdown mode
before V+ and V– achieve their normal operating voltages. Green
Idle maintains the transmitter supply voltages under transmitter
idle conditions so this delay does not occur.
Doesn’t it Increase Supply Voltage Ripple?
The ripple on the output voltage of a charge pump operating in
open-loop depends on three factors: the oscillator frequency, the
value of the reservoir capacitor, and the load current. The value of
the reservoir capacitor is fixed. Increasing the oscillator frequency
decreases the ripple voltage; decreasing the oscillator frequency
increases it. Increasing the load current increases the ripple volt-
age; decreasing the load current decreases it. The ripple voltage
at light loads is naturally lower than that for high load currents.
Using Green Idle, the ripple voltage is determined by the high and
low thresholds of the Green Idle circuit. These are nominally 7 V*
and 7.25 V**, so the ripple is 250 mV under most load conditions.
With very light load conditions, there may be some overshoot
above 7.25 V**, so the ripple is slightly greater. Under heavy load
conditions where the output never reaches 7.25 V**, the Green Idle
circuit is inoperative and the ripple voltage is determined by the load
current, the same as in a normal charge pump.
What about Electromagnetic Compatibility?
Green Idle does not operate with a constant oscillator frequency.
As a result, the frequency and spectrum of the oscillator signal vary
with load. Any radiated and conducted emissions also vary accord-
ingly. Like other Analog Devices RS-232 transceiver products, the
ADM33xxE devices feature slew rate limiting and other techniques
to minimize radiated and conducted emissions.
Transmitter (Driver) Section
The drivers convert 3.3 V logic input levels into EIA-232 output
levels. With V
CC
= 3.0 V and driving an EIA-232 load, the output
voltage swing is typically ±6.4 V (or ±5.5 V for ADM3310E
and ADM3315E).
Unused inputs may be left unconnected, as an internal 400 kV
pull-up resistor pulls them high forcing the outputs into a low
state. The input pull-up resistors typically source 8 mA when
grounded, so unused inputs should either be connected to V
CC
or left unconnected in order to minimize power consumption.
Receiver Section
The receivers are inverting level shifters that accept RS-232 input
levels and translate them into 3.3 V logic output levels. The inputs
have internal 5 kW pull-down resistors (22 kW for the ADM3310E)
to ground and are also protected against overvoltages of up to ±30 V.
Unconnected inputs are pulled to 0 V by the internal 5 kW (or
22 kW for the ADM3315E) pull-down resistor. This, therefore,
results in a Logic 1 output level for unconnected inputs or for
inputs connected to GND.
The receivers have Schmitt trigger inputs with a hysteresis level
of 0.14 V. This ensures error-free reception for both noisy inputs
and for inputs with slow transition times.
ENABLE AND SHUTDOWN
The enable function is intended to facilitate data bus connections
where it is desirable to three-state the receiver outputs. In the
disabled mode, all receiver outputs are placed in a high imped-
ance state. The shutdown function is intended to shut the device
down, thereby minimizing the quiescent current. In shutdown,
all transmitters are disabled. All receivers are shut down, except
for receiver R3 (ADM3307E, ADM3312E, and ADM3315E),
receiver R5 (ADM3311E), and receivers R4 and R5 (ADM3310E).
Note that disabled transmitters are not three-stated in shutdown,
so it is not permitted to connect multiple (RS-232) driver outputs
together.
The shutdown feature is very useful in battery-operated systems
since it reduces the power consumption to 66 nW. During shut-
down, the charge pump is also disabled. When exiting shutdown,
the charge pump is restarted and it takes approximately 100 ms
for it to reach its steady state operating conditions.
NOTES
*For ADM3310E and ADM3315E, replace with 6.25 V.
**For ADM3310E and ADM3315E, replace with 6.5 V.
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
–13–
RECEIVER
OUTPUT
EN INPUT
tDR
V
OH
– 0.1V
V
OL
+ 0.1V
V
OH
V
OL
0V
3V
Figure 5. Receiver Disable Timing
RECEIVER
OUTPUT
EN INPUT
tER
3V
0.4V
VOH
VOL
0V
3V
Figure 6. Receiver Enable Timing
High Baud Rate
The ADM33xxE features high slew rates, permitting data trans-
mission at rates well in excess of the EIA/RS-232E specifications.
RS-232 voltage levels are maintained at data rates up to 230 kbps
(460 kbps for ADM3307E) under worst-case loading conditions.
This allows for high speed data links between two terminals.
LAYOUT AND SUPPLY DECOUPLING
Because of the high frequencies at which the ADM33xxE oscillator
operates, particular care should be taken with printed circuit
board layout, with all traces being as short as possible and C1 to
C3 being connected as close to the device as possible. The use
of a ground plane under and around the device is also highly
recommended.
When the oscillator starts up during Green Idle operation, large
current pulses are taken from V
CC
. For this reason, V
CC
should be
decoupled with a parallel combination of 10 mF tantalum and
0.1 mF ceramic capacitors, mounted as close to the V
CC
pin as
possible.
Capacitors C1 to C3 can have values between 0.1 mF and 1 mF.
Larger values give lower ripple. These capacitors can be either
electrolytic capacitors chosen for low equivalent series resistance
(ESR) or nonpolarized types, but the use of ceramic types is
highly recommended. If polarized electrolytic capacitors are
used, polarity must be observed (as shown by C1+).
ESD/EFT TRANSIENT PROTECTION SCHEME
The ADM33xxE uses protective clamping structures on all inputs
and outputs that clamp the voltage to a safe level and dissipate
the energy present in ESD (electrostatic) and EFT (electrical fast
transients) discharges. A simplified schematic of the protection
structure is shown below in Figures 7a and 7b (see Figures 8a and
8b for ADM3307E protection structure). Each input and output
contains two back-to-back high speed clamping diodes. During nor-
mal operation with maximum RS-232 signal levels, the diodes have
no effect as one or the other is reverse biased depending on the
polarity of the signal. If however the voltage exceeds about ±50 V,
reverse breakdown occurs and the voltage is clamped at this level.
The diodes are large p-n junctions designed to handle the
instantaneous current surge that can exceed several amperes.
The transmitter outputs and receiver inputs have a similar protec-
tion structure. The receiver inputs can also dissipate some of the
energy through the internal 5 kW (or 22 kW for the ADM3310E)
resistor to GND as well as through the protection diodes.
R
IN
Rx
D1
D2
RECEIVER
INPUT
Figure 7a. Receiver Input Protection Scheme
Tx
D1
D2
TRANSMITTER
OUTPUT
Figure 7b. Transmitter Output Protection Scheme
The ADM3307E protection scheme is slightly different (see
Figures 8a and 8b). The receiver inputs, transmitter inputs, and
transmitter outputs contain two back-to-back high speed clamping
diodes. The receiver outputs (CMOS outputs), SD and EN pins
contain a single reverse biased high speed clamping diode. Under
normal operation with maximum CMOS signal levels, the receiver
output, SD, and EN protection diodes have no effect because
they are reversed biased. If, however, the voltage exceeds about
15 V, reverse breakdown occurs and the voltage is clamped at
this level. If the voltage reaches –0.7 V, the diode is forward
biased and the voltage is clamped at this level. The receiver inputs
can also dissipate some of the energy through the internal 5 kW
resistor to GND as well as through the protection diodes.
D3
RIN
D1
D2
RECEIVER
INPUT
RECEIVER
OUTPUT
Rx
Figure 8a. ADM3307E Receiver Input Protection Scheme
Tx
D1
D2
TRANSMITTER
INPUT
TRANSMITTER
OUTPUT
D3
D4
Figure 8b. ADM3307E Transmitter Output Protection Scheme
The protection structures achieve ESD protection up to ±15 kV on
all RS-232 I/O lines (and all CMOS lines, including SD and EN
for the ADM3307E). The methods used to test the protection
scheme are discussed later.
REV. G
–14–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
ESD TESTING (IEC 1000-4-2)
IEC 1000-4-2 (previously 801-2) specifies compliance testing using
two coupling methods, contact discharge and air-gap discharge.
Contact discharge calls for a direct connection to the unit being
tested. Air-gap discharge uses a higher test voltage but does not
make direct contact with the unit under testing. With air discharge,
the discharge gun is moved toward the unit under testing, which
develops an arc across the air gap, thus the term air discharge.
This method is influenced by humidity, temperature, barometric
pressure, distance, and rate of closure of the discharge gun. The
contact discharge method, while less realistic, is more repeatable
and is gaining acceptance in preference to the air-gap method.
Although very little energy is contained within an ESD pulse,
the extremely fast rise time coupled with high voltages can cause
failures in unprotected semiconductors. Catastrophic destruction
can occur immediately as a result of arcing or heating. Even if
catastrophic failure does not occur immediately, the device may
suffer from parametric degradation that may result in degraded
performance. The cumulative effects of continuous exposure can
eventually lead to complete failure.
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static discharge
that can damage or completely destroy the interface product
connected to the I/O port. Traditional ESD test methods, such as
the MIL-STD-883B method 3015.7, do not fully test a product’s
susceptibility to this type of discharge. This test was intended to
test a product’s susceptibility to ESD damage during handling. Each
pin is tested with respect to all other pins. There are some impor-
tant differences between the traditional test and the IEC test:
(a) The IEC test is much more stringent in terms of discharge
energy. The peak current injected is over four times greater.
(b) The current rise time is significantly faster in the IEC test.
(c) The IEC test is carried out while power is applied to the device.
It is possible that the ESD discharge could induce latch-up in the
device under test. This test, therefore, is more representative of
a real world I/O discharge where the equipment is operating
normally with power applied. For maximum peace of mind,
however, both tests should be performed, ensuring maximum
protection both during handling and later during field service.
R1 R2
C1
DEVICE
UNDER TEST
HIGH
VOLTAGE
GENERATOR
ESD TEST METHOD R2 C1
HUMAN BODY MODEL
ESD ASSOC. STD 55.1 1.5kV 100pF
IEC1000-4-2 330V 150pF
Figure 9. ESD Test Standards
100
I
PEAK –
%
90
36.8
10
t
DL
t
RL
TIME t
Figure 10. Human Body Model ESD Current Waveform
100
I
PEAK
– %
90
10
TIME t
30ns
60ns
0.1 TO 1ns
Figure 11. IEC1000-4-2 ESD Current Waveform
The ADM33xxE devices are tested using both of the previously
mentioned test methods. All pins are tested with respect to all
other pins as per the Human Body Model, ESD Assoc. Std. 55.1
specification. In addition, all I/O pins are tested as per the
IEC 1000-4-2 test specification. The products were tested under
the following conditions:
(a) Power-On—Normal Operation
(b) Power-Off
There are four levels of compliance defined by IEC 1000-4-2. The
ADM33xxE parts meet the most stringent compliance level for
both contact and air-gap discharge. This means the products are
able to withstand contact discharges in excess of 8 kV and air-
gap discharges in excess of 15 kV.
Table V. IEC 1000-4-2 Compliance Levels
Level Contact Discharge (kV) Air Discharge (kV)
12 2
24 4
36 8
48 15
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
–15–
OUTLINE DIMENSIONS
32-Lead Lead Frame Chip Scale Package [LFCSP]
(CP-32-2)
Dimensions shown in millimeters
COMPLIANT TO JEDEC STANDARDS MO-220-VHHD-2
0.30
0.23
0.18
0.20 REF
0.80 MAX
0.65 TYP
0.05 MAX
0.02 NOM
12MAX
1.00
0.85
0.80 SEATING
PLANE
COPLANARITY
0.08
1
32
8
9
25
24
16
17
BOTTOM
VIEW
0.50
0.40
0.30
3.50 REF
0.50
BSC
PIN 1
INDICATOR
TOP
VIEW
5.00
BSC SQ
4.75
BSC SQ SQ
3.25
3.10
2.95
PIN 1
INDICATOR
0.60 MAX
0.60 MAX
0.25 MIN
28-Lead Shrink Small Outline Package [SSOP]
(RS-28)
Dimensions shown in millimeters
0.25
0.09
0.95
0.75
0.55
8
4
0
0.05
MIN
1.85
1.75
1.65
2.00 MAX
0.38
0.22 SEATING
PLANE
0.65
BSC
0.10
COPLANARITY
28 15
14
1
10.50
10.20
9.90
5.60
5.30
5.00
8.20
7.80
7.40
COMPLIANT TO JEDEC STANDARDS MO-150AH
28-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-28)
Dimensions shown in millimeters
4.50
4.40
4.30
28 15
141
9.80
9.70
9.60
6.40 BSC
PIN 1
SEATING
PLANE
0.15
0.05
0.30
0.19
0.65
BSC 1.20
MAX
0.20
0.09
0.75
0.60
0.45
8
0
COMPLIANT TO JEDEC STANDARDS MO-153AE
COPLANARITY
0.10
24-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-24)
Dimensions shown in millimeters
24 13
121
6.40 BSC
4.50
4.40
4.30
PIN 1
7.90
7.80
7.70
0.15
0.05
0.30
0.19
0.65
BSC 1.20
MAX
0.20
0.09
0.75
0.60
0.45
8
0
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-153AD
0.10 COPLANARITY
REV. G
C02915–0–4/04(G)
–16–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
Revision History
Location Page
4/04—Data Sheet changed from REV. F to REV. G
Changes to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
8/02—Data Sheet changed to REV. F
ADM3307E (REV. 0), ADM3311E (REV. E), and ADM3312E (REV. A)
data sheets merged into REV. G of ADM33xxE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UNIVERSAL
ADM3310E (REV. PrA now prelims) and ADM3315E (REV. PrA) added . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UNIVERSAL
Edits to FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Edits to APPLICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Edits to GENERAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Edits to FUNCTIONAL BLOCK DIAGRAMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Edits to SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Edits to ABSOLUTE MAXIMUM RATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
ADM33xx PRODUCT SELECTION GUIDE added . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Added ADM3307E, ADM3310E, ADM3312E, and ADM3315E PIN CONFIGURATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Edits to PIN FUNCTION DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Added ADM3307E, ADM3310E, ADM3312E, and ADM3315E Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Edits to TPCs 1–14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
TPCs 15–18 deleted . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Edits to CIRCUIT DESCRIPTION section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Edits to Charge Pump DC-to-DC Voltage Converter section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Edits to How Does It Work section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Edits to Green Idle vs. Shutdown section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Edits to Doesn’t It Increase Supply Voltage Ripple? section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Edits to What About Electromagnetic Compatibility? section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Edits to Transmitter (Driver) section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Edits to Receiver section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Edits to ENABLE AND SHUTDOWN section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Edits to High Baud Rate section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Edits to ESD/EFT TRANSIENT PROTECTION SCHEME . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Added Figures 8a and 8b and renumbered the figures that followed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Edits to ESD TESTING (IEC 1000-4-2) section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Edits to Figure 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Deleted Table II and Table III and replaced them with Table V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Added RU-24 PACKAGE OUTLINE; updated CP-32, RS-28 and RU-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15