TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA | TIMI213-15 MICROWAVE POWER GaAs FET FEATURES : BM HIGH POWER mM BROAD BAND INTERNALLY MATCHED Paap = 42.0dBm at 12.7 to 13. 2GHz Mi HIGH GAIN M HERMETICALLY SEALED PACKAGE Gigs = 6.0dB at 12.7 to 13. 2GHz RF PERFORMANCE SPECIFICATIONS (Ta = 25C) CHARACTERISTIC SYMBOL CONDITION UNIT MIN. TYP. MAX. Output Power at 1dB Compression Point Pigs Vps= 9 V dBm 41.0 42.0 - Power Gain at 1dB G dB Compression Point 1dB f= 12.7 - 13. 2GHz 5.0 6.0 ~ Drain Current los A ~ 4.5] 5.5 Power Added Efficiency add of _ 29 _ Channel-Temper- ature Rise ATch Vos X Ips XRth(c-c) C - - 100 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL CONDITION UNIT MIN. TYP. MAX. Transconductance gm es SOA mS - 3000 - Pinch-off Voltage Vesott Ws aie mA V -1.5 | ~3.0 | -45 Saturated Drain Current loss Ws y A _ 10.0 11.5 Valeoe Breakdown Veso log = 145 pA Vv 5 _ _ Thermal Resistance Rih (-c) Channel to Case CW - 2.0 2.5 Recommended Gate Resistance(Rg) : Re = Rgi(50 22) + Rg2(50 2)= 100 Q (MAX) *& The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * The information contained herein may be changed without prior notice. It ia therefore advisable to contact TOSHIBA before proceeding with the design of equipment incorporating this product. TOSHIBA CORPORATION SAREE RAPER ROR re kee can meee ha scan a Sant 1996 ~ TIM1213-15 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL UNIT RATING Drain-Source Voitage Vos Vv 15 Gate-Source Voilage Ves Vv - Drain Current lps A 41.5 Total Power Dissipation (Tg = 25C) Py Ww 60 Channel Temperature Teh C 176 Storage Temperature Tsig C 65~175 PACKAGE OUTLINE (2-11C1B) R3.0 : @ z Unit in mm Q I - a @ Gata N @ Source ! aa x 1 @ Drain Ni n rm N Loi z ) @ 0.60.15 @ = +|- >- NN 17.0 40.3 21,.5MAX. a 4 LLOMAX. 3 . x | [44 | | = Co Td 3 | | ~~] <lo o =| + +1 N Ss w oO] <- HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating lime should not exceed 10 seconds at 260C, RF PERFORMANCES TIM1213-15 P, (d8m) Py (dBm) 43 42 41 40 42 |- 40 38 36 fF Output Power vs. Frequency Vos = 9V Ips 3 4.54 Pi, = 36 dBm 12.7 13.2 Frequency {GHz) Output Power vs. Input Power f = 13. 2GHz r Vos = 9 V Ipg HAE A La Po Tadd) P ao Le [| 28 30 32 34 36 Pig (dBm) 40 30 20 10 Yadd {%) TIM1213-15 POWER DISSIPATION VS. CASE TEMPERATURE 100 80 60 NY = SS = o 40 SY 20 \ ay 0 ~ 0 40 80 120 160 200 Te (C)