CMT02N60
POWER FIELD EFFECT TRANSISTOR
2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 1
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Front View
123
GATE
DRAIN
SOURCE
TO-252
Front View
123
GATE
DRAIN
SOURCE
TO-251
Front View
123
GATE
DRAIN
SOURCE
N-Channel MOSFET
D
S
G
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Drain to Current － Continuous
－ Pulsed
ID
IDM
2.0
9.0
A
Gate-to-Source Voltage － Continue
－ Non-repetitive
VGS
VGSM
±20
±40
V
V
Total Power Dissipation
Derate above 25℃
PD50
0.4
W
W/℃
Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃
Single Pulse Drain-to-Source Avalanche Energy － T
J = 25℃
(VDD = 100V, VGS = 10V, IL = 2A, L = 10mH, RG = 25Ω)
EAS
20
mJ
Thermal Resistance － Junction to Case
－ Junction to Ambient
θJC
θJA
1.0
62.5
℃/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL260 ℃
CMT02N60
POWER FIELD EFFECT TRANSISTOR
2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 2
ORDERING INFORMATION
Part Number Package
CMT02N60N251 TO-251
CMT02N60N252 TO-252
CMT02N60N220 TO-220
CMT02N60N220FP TO-220 Full Package
CMT02N60GN251* TO-251
CMT02N60GN252* TO-252
CMT02N60GN220* TO-220
CMT02N60GN220FP* TO-220 Full Package
*Note: G : Suffix for Pb Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT02N60
Characteristic Symbol Min Typ Max Units
Drain-Source Breakdown Voltage
(V
GS = 0 V, ID = 250 μA)
V(BR)DSS 600 V
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
IDSS
0.25
1.0
mA
Gate-Source Leakage Current-Forward
(V
gsf = 20 V, VDS = 0 V)
IGSSF 100 nA
Gate-Source Leakage Current-Reverse
(V
gsr = 20 V, VDS = 0 V)
IGSSR 100 nA
Gate Threshold Voltage
(V
DS = VGS, ID = 250 μA)
VGS(th) 2.0 3.1 4.0 V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.0A) * RDS(on) 3.3 4.4 Ω
Drain-Source On-Voltage (VGS = 10 V)
(I
D = 2.0 A)
VDS(on) 8.8 V
Forward Transconductance (VDS ≧ 50 V, ID = 1.0A) * gFS 1.0 mhos
Input Capacitance Ciss 435 pF
Output Capacitance Coss 56
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz) Crss 9.2 pF
Turn-On Delay Time td(on) 12 ns
Rise Time tr 21 ns
Turn-Off Delay Time td(off) 30 ns
Fall Time
(VDD = 300 V, ID = 2.0 A,
VGS = 10 V,
RG = 18Ω) * tf 24 ns
Total Gate Charge Qg 13 22 nC
Gate-Source Charge Qgs 2.0 nC
Gate-Drain Charge
(VDS = 400 V, ID = 2.0 A,
VGS = 10 V)* Qgd 6.0 nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD 4.5 nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS 7.5 nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1) VSD 1.0 1.6 V
Forward Turn-On Time ton ** ns
Reverse Recovery Time
(IS = 2.0 A, VGS = 0 V,
dIS/dt = 100A/µs) trr 340 ns
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
CMT02N60
POWER FIELD EFFECT TRANSISTOR
2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 3
TYPICAL ELECTRICAL CHARACTERISTICS
CMT02N60
POWER FIELD EFFECT TRANSISTOR
2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 4
PACKAGE DIMENSION TO-220
L
N
H
J
K
A
C
B
D
F
G
123
T
V
U
Z
S
R
Q
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
S
C
T
U
J
R
B
Q
Z
H
A
F
L
V
G
D
N
TO-220FP
K
M
H
I
J
A
C
B
D
E
G
Q
b
R
b1
P
O
N
M
N
Front View Side View Back View
I
J
H
K
C
B
Q
D
E
P
G
b1 b2
e
A
b
O
R
b2
e
R1.60
R1.50
R1.50
R3.18±0.10
CMT02N60
POWER FIELD EFFECT TRANSISTOR
2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 5
PACKAGE DIMENSION
TO-251
CMT02N60
POWER FIELD EFFECT TRANSISTOR
2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 6
PACKAGE DIMENSION
TO-252
CMT02N60
POWER FIELD EFFECT TRANSISTOR
2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 7
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
T EL : +886-3-567 9979 T EL : +886-2-8692 1591
FAX: +886-3-567 9909 FAX: +886-2-8692 1596
