© 2006 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
0623
DSS 25-0045A
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAV TC = 155°C; rectangular, d = 0.5 25 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 400 A
EAS IAS = 18 A; L = 180 µH; TVJ = 25°C; non repetitive 46 mJ
IAR VA =1.5·VRRM typ.; f = 10 kHz; repetitive 1.8 A
(dv/dt)cr 1000 V/µs
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
Ptot TC = 25°C 135 W
Mdmounting torque 0.4...0.6 Nm
Weight typical 2 g
IFAV =25A
VRRM =45V
VF= 0.58 V
VRSM VRRM Type
V V
45 45 DSS 25-0045A
Symbol Conditions Characteristic Values
typ. max.
IR VR= VRRM;T
VJ = 25°C 1 mA
VR= VRRM;T
VJ = 125°C 10 mA
VFIF = 25 A; TVJ = 125°C 0.58 V
IF = 25 A; TVJ = 25°C 0.69 V
IF = 50 A; TVJ = 125°C 0.71 V
RthJC 1.1 K/W
RthCH 0.5 K/W
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see Outlines.pdf
Power Schottky Rectifier
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified.
AC
C
A
TO-220 AC
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
© 2006 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
0623
DSS 25-0045A
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
0 1020304050
0.001
0.01
0.1
1
10
100
51525350 102030
0
5
10
15
20
25
0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
04080120160
0
5
10
15
20
25
30
35
40
IF(AV)
TC
°C
IF(AV)
t
s
K/W
IFSM
tP
A
0 10203040
100
1000
10000
CT
IR
IF
A
VFVRVR
V
pF
V
mA
A
P(AV)
W
ZthJC
V
Single Pulse
(Thermal Resistance)
DSS 25-0045A
A
µs
0.08
TVJ=175°C
150°C
125°C
100°C
50°C
25°C
TVJ =
175°C
150°C
125°C
25°C
TVJ= 25°C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
75°C
D=0.5
0.33
0.25
0.17
DC
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
