2SC2712-BL(TE85L.F - TOSHIBA

2SC2712

2020-11-20

Toshiba Electronic Devices & Storage Corporation

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2712

Audio Frequency General Purpos e Am pli fi er Appl i cati o ns

• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)

• Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

= 0.95 (typ.)

• High hFE: hFE = 70 to 700

• Low noise: NF = 1dB (typ.), 10dB (max)

• Complementary to 2SA1162

• Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 60 V

Collector-emitter voltage VCEO 50 V

Emitter-base voltage VEBO 5 V

Collector current IC 150 mA

Base current IB 30 mA

Collector power dissipation PC 150 mW

Junction temperature Tj 125 °C

Storage temperature range Tstg −55 to 125 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Unit

: mm

JEDEC TO-236MOD

JEITA SC-59

TOSHIBA 2-3F1A

Weight: 0.012 g (typ.)

Start of commercial production

1982-10

2SC2712

2020-11-20

Toshiba Electronic Devices & Storage Corporation

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Hardware, software and systems described in this document are collect i vely referred to as “Product”.

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responsibl e for compl ying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimi ze risk and avoid situations in which a malfunction or fai l ure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corrupti on. Before c ust omers use the Product, create designs including t he

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all relevant TOSHIBA information, including without limitation, this document, the specificati ons, the data sheets and application notes

for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the

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• PRODUCT IS NEI THE R INTENDE D NO R WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHI CH

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Please use Product in compliance with all applicabl e l aws and regulations t hat regulate the inclusion or use of controlled substances,

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OCCURRING AS A RESULT OF NONCOMPLIANCE WIT H APPLICA B LE LAWS AND REGULATI O NS.

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