©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD233/235/237
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD233
: BD235
: BD237
45
60
100
V
V
V
VCEO Collector-Emitter Vo ltage : BD233
: BD235
: BD237
45
60
80
V
V
V
VCER Collector-Emitter Voltage : BD233
: BD235
: BD237
45
60
100
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 2 A
ICP *Collector Current (Pulse) 6 A
PC Collector Dissipation (TC=25°C) 25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Susta ining Voltage
: BD2 33
: BD2 35
: BD2 37
IC = 100mA, IB = 0 45
60
80
V
V
V
ICBO Collector Cut-off Current : BD2 33
: BD2 35
: BD2 37
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 100V, IE = 0
100
100
100
µA
µA
µA
IEBO Emitter Cut -of f Curr ent VEB = 5V, IC = 0 1 mA
hFE * DC Current G ain VCE = 2V, IC = 150mA
VCE = 2V, IC = 1A 40
25
VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A 0.6 V
VBE(on) * Base-Emitter ON Voltage VCE = 2V, IC = 1A 1.3 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 250mA 3 MHz
BD233/235/237
Medium Power Linear and Switching
Applications
• Complement to BD 234/236/238 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
BD233/235/237
Rev. A1, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
0.01 0.1 1 10
1
10
100
1000
VCE = 2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
10
VCE(sat)
VBE(sat)
IC = 10 IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAG E
IC[A], COLLECTOR CURRENT
1 10 100
0.1
1
10
IC MAX. (Continuous)
BD237
BD235
BD233
10µs
100
µ
s
1ms
DC
IC MAX. (Pulsed)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD233/235/237
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Prod uct Statu s Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series ™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWE R is used under license
