2SA1145
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1145
Audio Frequency Amplifier Applications
• Complementary to 2SC2705.
• Small Collector Output Capacitance: Cob = 2.5 pF (typ.)
• High Transition Frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −150 V
Collector-emitter voltage VCEO −150 V
Emitter-base voltage VEBO −5 V
Collector current IC −50 mA
Base current IB −5 mA
Collector power dissipation PC 800 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
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2006-11-09
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −150 V, IE = 0 ⎯ ⎯ −0.1 μA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA
Collector-emitter breakdown voltage V (BR) CEO IC = −1 mA, IB = 0 −150 ⎯ ⎯ V
DC current gain hFE (Note) VCE = −5 V, IC = −10 mA 80 ⎯ 240
Collector-emitter saturation voltage VCE (sat) I
C = −10 mA, IB = −1 mA ⎯ ⎯ −1.0 V
Base-emitter voltage VBE V
CE = −5 V, IC = −10 mA ⎯ ⎯ −0.8 V
Transition frequency fT V
CE = −5 V, IC = −10 mA ⎯ 200 ⎯ MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ⎯ 2.5 ⎯ pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
A1145
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
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2006-11-09
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
IC – VCE
Base-emitter voltage VBE (V)
DC current gain hFE
Collector current IC (mA)
hFE – IC
Transition frequency fT (MHz)
Collector current IC (mA)
fT – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (mA)
VCE (sat) – IC
Collector-base voltage VCB (V)
Cob – VCB
Collector output capacitance
Cob (pF)
Common emitter
VCE = −5 V
−50
0
0
−10
−20
−30
−40
−0.2 −0.4 −0.6 −0.8 −1.0 −1.4
Ta = 100°C
25
−1.2
−25
1
−0.5
IE = 0
f = 1 MHz
Ta = 25°C
300
−1 −3 −10 −100
3
5
10
0.3
0
−30
−0.5
Common emitter
Ta = 25°C
−5
VCE = −10V
1000
−1 −3 −10 −30 −100
100
300
3
1
Common emitter
VCE = −5V
10
−0.3
1000
30
100
300
−1 −3 −10 −50
−25
25
Ta = 100°C
−30
Common emitter
Ta = 25°C
0
0
−50
−10
IB = −0.1 mA
−20
−30
−40
−2 −4 −6 −8 −10 −12
−0.2
−14
0
−0.3
−0.5 −0.4
Common emitter
IC/IB = 10
−1
−0.03
−0.3
−0.5
−0.05
−0.1
−0.3
−1 −3 −10 −30 −100
Ta = 100°C
25
−3
−25
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2006-11-09
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Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
1200
0
0 40 80 120 160
400
800
No heat sink
2SA1145
2006-11-09
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RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
