HN62334B Series
524288-word × 8-bit CMOS Mask Programmable ROM
Description
The HN62334B is a 4-Mbit CMOS mask-programmable ROM organized as 524288 words by 8 bits.
Realizing low power consumption, this memory is allowed for battery operation.
Features
Single +5V power supply
Wired OR is permitted for the output in three states.
TTL compatible
Maximum access time: 150 ns (max)
Low power consumption: 100 mW (typ) active
5 µW (typ) standby
Byte-wide data organization
Pin compatible with JEDEC (EP-ROM)
Ordering Information
Type No. Access Time Package
HN62334BP-15 150 ns 600 mil 32-pin plastic DIP (DP-32)
HN62334BF-15 150 ns 32-pin plastic SOP (FP-32D)
HN62334BTT-15 150 ns 32-pin plastic TSOP-II (TTP-32DB)
HN62334B Series
2
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
A18
A17
A14
A13
A8
A9
A11
OE
A10
CE
D7
D6
D5
D4
D3
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
V
SS
CC
(Top view)
Block Diagram
A0
to
A18
CE
OE
Address
buffer Memory
array
3-state
output
buffer
D0
to
D7
HN62334B Series
3
Absolute Maximum Ratings
Parameter Symbol Value Unit Note
Supply voltage VCC –0.3 to +7.0 V 1
All input and output voltage VT–0.3 to VCC + 0.3 V 1
Operating temperature range Topr 0 to +70 °C
Storage temperature range Tstg –55 to +125 °C
Temperature under bias Tbias –20 to +85 °C
Note: 1. With respect to VSS.
Recommended Operating Conditions (VSS = 0 V, Ta = 0 to +70°C)
Parameter Symbol Min Typ Max Unit
Supply voltage VCC 4.5 5.0 5.5 V
Input voltage VIH 2.2 VCC + 0.3 V
VIL –0.3 0.8 V
DC Characteristics (VCC = 5 V ± 10%, VSS = 0 V, Ta = 0 to +70°C)
Parameter Symbol Min Max Unit Test Conditions
Supply current Active ICC —50mAV
CC = 5.5 V, IDOUT = 0 mA, tRC =
min
Standby ISB —30µAV
CC = 5.5 V, CE VCC – 0.2 V
Input leakage current |IIL|—10µA Vin = 0 to VCC
Output leakage current |IOL|—10µACE = 2.4 V, VOUT = 0 to VCC
Output voltage VOH 2.4 V IOH = –205 µA
VOL 0.4 V IOL = 1.6 mA
Capacitance (VCC = 5 V ± 10%, VSS = 0 V, Ta = 25°C, VIN = 0 V, f = 1 MHz)
Parameter Symbol Min Max Unit
Input capacitance Cin 15 pF
Output capacitance Cout 15 pF
Note: This parameter is sampled and not 100% tested.
HN62334B Series
4
AC Characteristics (VCC = 5 V ± 10%, VSS = 0 V, Ta = 0 to +70°C)
Output load: 1TTL gate + CL = 100 pF
(including jig capacitance)
Input pulse level: 0.8 to 2.4 V
Input and output timing reference levels: 1.5 V
Input rise and fall time: 10 ns
HN62334B
Parameter Symbol Min Max Unit
Read cycle time tRC 150 ns
Address access time tAA 150 ns
CE access time tACE 150 ns
OE access time tOE —70ns
Output hold time from address change tDHA 0—ns
Output hold time from CE tDHC 0—ns
Output hold time from OE tDHO 0—ns
CE to output in high-Z tCHZ*1 —70ns
OE to output in high-Z tOHZ*1 —70ns
CE to output in low-Z tCLZ 10 ns
OE to outpu in low-Z tOLZ 10 ns
Note: 1. tCHZ and tOHZ are defined as the time at which the output achieves the open circuit conditions and are
not referred to output voltage levels.
HN62334B Series
5
Timing Waveforms
Normal Mode
tRC
Address
CE
OE
Dout
tAA
tACE
tOE
tOLZ
tCHZ
tDHA
tDHC
tDHO
tCLZ
tOHZ
High-Z
Valid data
Notes: 1. tDHA, tDHC, tDHO: Determined by faster.
2. tAA, tACE, tOE: Determined by slower.
3. tCLZ, tOLZ: Determined by slower.
HN62334B Series
6
Package Dimensions
HM62334BP Series (DP-32) Unit: mm
0.51 Min
2.54 Min 5.08 Max
0.25+ 0.11
– 0.05
2.54 ± 0.25 0.48 ± 0.10 0° – 15°
41.90
42.50 Max
13.40
13.70 Max
1.20 15.24
32 17
116
2.30 Max
HM62334BF Series (FP-32D) Unit: mm
0.15 M
+ 0.10
– 0.05
0.40
20.45
1.00 Max
1.27
11.30
1.42
3.00 Max
0.22 + 0.13
– 0.07
20.95 Max
32 17
116
0 – 8 °
0.80 ± 0.20
14.14 ± 0.30
0.10
0.15 + 0.12
– 0.10
HN62334B Series
7
HM62334BTT Series (TTP-32DB) Unit: mm
0.10
0.10 M
0.50
0.22 ± 0.08
1.20 Max
24
25 8
9
0.50 ± 0.10
0.45 Max 0.80
0.20 ± 0.06
8.00
11.80
8.20 Max
13.40 ± 0.30
0.145
0.13
0 – 5°
+0.055
–0.015
+0.10
–0.05