SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - JANUARY 1996 ✪
FEATURES
* SUITABLE FOR GE NER AL AF APPLICAT ION S AN D
CLASS B AUDIO OU TPUT S TAG ES U P TO 3W
* HIGH hFE AND LOW SATURATI ON VOLTAGE
COMPLEMEN TARY TY PE - BC868 (NPN)
PARTMARKI N G DETAI LS - BC869 - CEC
BC869-16 - CHC
BC869-25 - CJC
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -25 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Power Dissipation at Tamb =25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO -25 V IC=-100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO -20 V IC=-10mA*
Emitter-Base
Breakdown Voltage V(BR)EBO -5 V IE=-10µA
Collector Cut-Off
Current ICBO -10
-1 µA
mA VCB = -25V
VCB = -25V,Tamb =150oC
Emitter Cut-Off Current IEBO -10 µAVEB=-5V
Collector-Emitter
Saturation Voltage VCE(sat) -0.5 V IC=-1A,IB=-100mA*
Base-Emitter Turn-On
Voltage VBE(on) -1.0 V IC=-1A, VCE=-1V*
Static Forward Current
Transfer Ratio hFE
BC869-16
BC869-25
50
85
60
100
160
375
250
375
IC=-5mA, V CE=-10V*
IC=-500mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-500mA, VCE=-1V*
Transition Frequency fT60 MHz IC=-10mA, VCE=-5V
f = 35MHz
Output Capacitance Cobo 45 pF VCB=-10V, f= 1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet
BC869
3 - 12
C
C
B
E
SOT89
