Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N2857UB
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2857UBJ)
• JANTX level (2N2857UBJX)
• JANTXV level (2N2857UBJV)
• JANS level (2N2857UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• Ultra-High frequency transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0011
• Reference document:
MIL-PRF-19500/343
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 15
Volts
Collector-Base Voltage VCBO 30
Volts
Emitter-Base Voltage VEBO 3
Volts
Collector Current, Continuous IC 40
mA
Power Dissipation, TA = 25OC
Derate linearly above 25OC PT 200
1.14
mW
mW/°C
Power Dissipation, TC = 25OC
Derate linearly above 25OC PT 300
1.71
mW
mW/°C
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N2857UB
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 3 mA 15 Volts
Collector-Base Cutoff Current ICBO1 V
CB = 15 Volts 10 nA
Collector-Base Cutoff Current ICBO3 V
CB = 30 Volts 1 µA
Collector-Base Cutoff Current ICBO2 VCB = 15 Volts, TA = 150°C 1
µA
Collector-Emitter Cutoff Current ICES V
CE = 16 Volts 100 nA
Emitter-Base Cutoff Current IEBO1 V
EB = 3 Volts 10 µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
IC = 3 mA, VCE = 1 Volts
IC = 3 mA, VCE = 1 Volts
TA = -55°C
30
10
150
Base-Emitter Saturation Voltage VBEsat I
C = 10 mA, IB = 1 mA 1.0 Volts
Collector-Emitter Saturation Voltage VCEsat I
C = 10 mA, IB = 1 mA 0.4 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 6 Volts, IC = 5 mA,
f = 100 MHz 10 21
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 6 Volts, IC = 2 mA,
f = 1 kHz 50 220
Collector to Base Feedback
Capacitance CCB VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 1
pF
Collector Base time constant rb’CC VCB = 6 Volts, IE = 2 mA,
f = 31.9 MHz 4 15
ps
Small Signal Power Gain Gpe VCE = 6 Volts, IE = 1.5 mA,
f = 450 MHz 12.5 21
MHz
Noise Figure F
VCE = 6 Volts, IC = 1.5 mA,
f < 450 MHz, Rg = 50 Ω 4.5 dB
