2SC2712
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TO SHIBA T r ansistor Silicon NP N Epitaxi a l Ty pe (PCT proce ss)
2SC2712
Audio Frequency General Purpose Amplifier Applications
· High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
· Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
· High hFE: hFE = 70~700
· Low noise: NF = 1dB (typ.), 10dB (max)
· Complementary to 2SA1162
· Small package
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collect or-base voltage VCBO 60 V
Collect or-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Collect or power diss i pation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
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Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 60 V, IE = 0 ¾ ¾ 0.1 mA
Emitte r cut-off cur r ent IEBO V
EB = 5 V, IC = 0 ¾ ¾ 0.1 mA
DC current gain hFE
(Note) VCE = 6 V, IC = 2 mA 70 ¾ 700
Collect or-em it t e r saturati on vol tage VCE (sat) I
C = 100 mA, IB = 10 mA ¾ 0.1 0.25 V
Transiti on frequenc y fT V
CE = 10 V, IC = 1 mA 80 ¾ ¾ MHz
Collect or output capaci t ance Cob V
CB = 10 V, IE = 0, f = 1 MHz ¾ 2.0 3.5 pF
Noise figure NF VCE = 6 V, IC = 0 .1 mA, f = 1 kHz,
Rg = 10 kW ¾ 1.0 10 dB
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700
( ) marking symbol
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000707EA
A
RESTRICTIONS O N PRODUCT USE
