DATA SHEET
Preliminary specification 2001 April 05
DISCRETE SEMICONDUCTORS
BLF2022-40
UHF power LDMOS transistor
M3D750
2001 April 05 2
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-40
FEATURES
High power gain
Easy power control
Excellent ruggedness
Designed for broadband operation (2.0 to 2.2 GHz)
Internal input and output matching for high gain and
efficiency
Improved linearity at backoff levels.
APPLICATIONS
Common source class-AB operation for PCN and PCS
applications in the 2000 to 2200 MHz frequency range
Suitable for GSM, Edge, CDMA and WCDMA
applications.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT608A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING
PIN DESCRIPTION
1drain
2gate
3 source, connected to flange
Top view
2
1
3
MBL290
Fig.1 Simplified outline SOT608A.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
Two-tone, class-AB f1= 2170; f2= 2170.1 28 40 (PEP) >10.5 >30 ≤−25
SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage −±15 V
IDDC drain current 5A
Tstg storage temperature 65 +150 °C
Tjjunction temperature 200 °C
2001 April 05 3
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-40
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; Rth j-h = 1.15 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLF2022-40 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS =28V; I
DQ = 340 mA; PL= 40 W; f = 2170 MHz.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-h thermal resistance from junction to
heatsink
Th=25°C, Ptot = 152 W, note 1 2.3 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS =0; I
D=0.8mA 65 −−V
VGSth gate-source threshold voltage VDS =10V; I
D=80mA 5V
IDSS drain-source leakage current VGS =0; V
DS =26V −−6µA
IDSX on-state drain current VGS =V
GS th +9V; V
DS =10V 11 −−A
IGSS gate leakage current VGS =±15 V; VDS =0 −−14 nA
gfs forward transconductance VDS =10V; I
D=2.9A 2.3 S
RDSon drain-source on-state resistance VGS =V
GS th +9V; I
D=2.9A 0.26 −Ω
Crss feedback capacitance VGS =0; V
DS =26V; f=1MHz 1.7 pF
MODE OF OPERATION f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
Two-tone, class-AB f1= 2170; f2= 2170.1 28 340 40 (PEP) >10.5 >30 ≤−25
2001 April 05 4
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-40
PACKAGE OUTLINE
Package under
development
Philips Semiconductors reserves the
right to make changes without notice.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT608A 01-02-02
01-02-22
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 2 leads SOT608A
p
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
A
w1AB
M M M
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
7.24
6.99 0.15
0.10
10.29
9.98
10.29
10.03
15.75
14.73
9.91
9.65
4.75
3.73
cU2
0.25 0.5115.24
qw
2
w1
F
1.14
0.89
U1
20.45
20.19
p
3.43
3.18
Q
1.70
1.35
EE
1
10.29
9.98
inches 0.285
0.275 0.006
0.004
0.405
0.393
D1
10.29
10.03
0.405
0.395
0.405
0.395
0.620
0.580
0.390
0.380
0.187
0.147 0.010 0.0200.600
0.045
0.035
0.805
0.795
0.125
0.115
0.067
0.053
0.405
0.393
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2001 April 05 5
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-40
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2001 72
Philips Semiconductors – a worldwide company
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
TheNetherlands,Fax.+31402724825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 7 - 9 Rue du Mont Valérien, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4728 6600, Fax. +33 1 4728 6638
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel.+4940235360,Fax.+494023536300
Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A,
Tel: +36 1 382 1700, Fax: +36 1 382 1800
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel.+4722748000,Fax.+4722748341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands 125002/02/pp6 Date of release: 2001 April 05 Document order number: 9397 750 08218