
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback August 18, 2015
IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.033mH
RG = 25Ω, IAS = 102A, VGS =10V. Part not recommended for use
above this value.
S
D
G
ISD ≤ 75A, di/dt ≤ 1730A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.091 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 3.3 4.1 mΩ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
RG(int) Internal Gate Resistance ––– 0.80 ––– Ω
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 280 ––– ––– S
QgTotal Gate Charge ––– 120 170 nC
Qgs Gate-to-Source Charge ––– 27 –––
Qgd Gate-to-Drain ("Miller") Charge ––– 33 –––
Qsync Total Gate Charge Sync. (Qg - Qgd)––– 87 –––
td(on) Turn-On Delay Time ––– 20 ––– ns
trRise Time ––– 68 –––
td(off) Turn-Off Delay Time ––– 55 –––
tfFall Time ––– 68 –––
Ciss Input Capacitance ––– 6920 ––– pF
Coss Output Capacitance ––– 600 –––
Crss Reverse Transfer Capacitance ––– 270 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
––– 770 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)––– 960 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 170A
(Body Diode)
ISM Pulsed Source Current ––– ––– 670
(Body Diode)
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 36 54 ns TJ = 25°C VR = 64V,
––– 41 62 TJ = 125°C IF = 75A
Qrr Reverse Recovery Charge ––– 50 75 nC TJ = 25°C
t
=
100
µs
––– 67 100 TJ = 125°C
IRRM Reverse Recovery Current ––– 2.4 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 75A
ID = 75A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS = 38V
Conditions
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
TJ = 25°C, IS = 75A, VGS = 0V
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 75A
VDS = VGS, ID = 150µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
ID = 75A
RG = 2.7Ω
VGS = 10V
VDD = 49V
ID = 75A, VDS =0V, VGS = 10V