IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA1N80P IXTP1N80P
IXTU1N80P IXTY1N80P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 0.30 0.55 S
Ciss 250 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 22 pF
Crss 5.3 pF
td(on) 20 ns
tr 18 ns
td(off) 58 ns
tf 42 ns
Qg(on) 9.0 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 1.4 nC
Qgd 5.5 nC
RthJC 3.0 °C/W
RthCS (TO-220) 0.50 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 1 A
ISM Repetitive, Pulse Width Limited by TJM 4 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 700 ns
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50Ω (External)
IF = 1A, -di/dt = 100A/μs
VR = 100V, VGS = 0V