© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ800 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C1A
IDM TC= 25°C, Pulse Width Limited by TJM 2A
IATC= 25°C1A
EAS TC= 25°C75mJ
dV/dt IS IDM, VDD VDSS, TJ 150°C 5 V/ns
PDTC= 25°C42W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.50 g
TO-220 3.00 g
TO-252 0.35 g
TO-251 0.40 g
DS100112(02/09)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 800 V
VGS(th) VDS = VGS, ID = 50μA 2.0 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS 3 μA
VGS = 0V TJ = 125°C 30 μA
RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 10 14 Ω
PolarTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
VDSS = 800V
ID25 = 1A
RDS(on)
14ΩΩ
ΩΩ
Ω
Preliminary Technical Information
Features
zInternational Standard Packages
zFast Intrinsic Rectifier
zAvalanche Rated
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
TO-252 (IXTY)
(TAB)
TO-251 (IXTU)
S
D
G
S
G
TO-220 (IXTP)TO-263 (IXTA)
(TAB)
G
S(TAB)
D
G
S
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA1N80P IXTP1N80P
IXTU1N80P IXTY1N80P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 ID25, Note 1 0.30 0.55 S
Ciss 250 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 22 pF
Crss 5.3 pF
td(on) 20 ns
tr 18 ns
td(off) 58 ns
tf 42 ns
Qg(on) 9.0 nC
Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 1.4 nC
Qgd 5.5 nC
RthJC 3.0 °C/W
RthCS (TO-220) 0.50 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 1 A
ISM Repetitive, Pulse Width Limited by TJM 4 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 700 ns
Note 1: Pulse Test, t 300μs; Duty Cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Resistive Switching Times
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 50Ω (External)
IF = 1A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA1N80P IXTP1N80P
IXTU1N80P IXTY1N80P
Fig. 1. Ou tp u t C h aracteri sti cs
@ 25ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25º C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 5 10 15 20 25 30
V
DS
- Vo lt s
I
D
- A mp e res
V
GS
= 10V
8V
6V
5V
7V
Fi g . 3. Outp u t C h ar acter i sti cs
@ 125ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 2 4 6 8101214161820222426
V
DS
- Volt s
I
D
- Am peres
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 0. 5A Val ue
vs. Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orm a lize d
V
GS
= 10V
I
D
= 1A
I
D
= 0. 5A
Fig. 5. R
DS(on)
Normalized to I
D
= 0.5A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
D
- Amperes
R
DS(on)
- N orma liz ed
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximu m D r ai n C u r r en t vs.
Case Temper atur e
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Am peres
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA1N80P IXTP1N80P
IXTU1N80P IXTY1N80P
IXYS REF: T_1N80P(1A)02-10-09-A
Fig. 7. Input Adm ittance
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
2.53.03.54.04.55.05.56.06.5
VGS - Volts
ID - Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID - Amperes
g
f s
- S ie me ns
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90
VSD - Vol ts
IS - A m p e res
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
1
2
3
4
5
6
7
8
9
10
0123456789
QG - Nan o Coul ombs
VGS - V olt s
V
DS
= 400V
I
D
= 0. 5A
I
G
= 1mA
Fig. 11. Capacitan ce
1
10
100
1,000
0 5 10 15 20 25 30 35 40
VDS - V olt s
Capacitance - PicoFarads
f
= 1 MHz Ciss
Crss
Coss
Fi g. 12. Maxi mu m Tr an s i en t Th er ma l
Impedance
0.1
1.0
10.0
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA1N80P IXTP1N80P
IXTU1N80P IXTY1N80P
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
TO-251 (IXTU) Outline
TO-252 (IXTY) Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 .086 .094
A1 0.89 1.14 0.35 .045
b 0.64 0.89 .025 .035
b1 0.76 1.14 .030 .045
b2 5.21 5.46 .205 .215
c 0.46 0.58 .018 .023
c1 0.46 0.58 .018 .023
D 5.97 6.22 .235 .245
E 6.35 6.73 .250 .265
e 2.28 BSC .090 BSC
e1 4.57 BSC .180 BSC
H 17.02 17.78 .670 .700
L 8.89 9.65 .350 .380
L1 1.91 2.28 .075 .090
L2 0.89 1.27 .035 .050
1. Gate 2.Drain
3. Source 4. Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115