
2SA1020
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications
Power Switching Applications
• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SC2655
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −50 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −2 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Electrical Characte ristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −50 V, IE = 0 ⎯ ⎯ −1.0 µA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ⎯ ⎯ −1.0 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ⎯ ⎯ V
hFE (1) V
CE = −2 V, IC = −0.5 A 70 ⎯ 240
DC current gain hFE (2) V
CE = −2 V, IC = −1.5 A 40 ⎯ ⎯
Collector-emitter saturation voltage VCE (sat) I
C = −1 A, IB = −0.05 A ⎯ ⎯ −0.5 V
Base-emitter saturation voltage VBE (sat) I
C = −1 A, IB = −0.05 A ⎯ ⎯ −1.2 V
Transition frequency fT V
CE = −2 V, IC = −0.5 A ⎯ 100 ⎯ MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ⎯ 40 ⎯ pF
Turn-on time ton ⎯ 0.1 ⎯
Storage time tstg ⎯ 1.0 ⎯
Switching time
Fall time tf
−IB1 = IB2 = 0.05 A
DUTY CYCLE ≤ 1%
⎯ 0.1 ⎯
µs
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
20
sInput IB2
IB1
Output
VCC
30 V
IB1
30 Ω
IB2