RECTRON
SEMICONDUCTOR
FEATURES
*
*
*
*
Power dissipation
PCM 0.2 W(Tamb=25OC)
Collector current
ICM 0.2 A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT3904LT1
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
NOTES :
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS SYMBOL UNITS
417
-
Volts
oC/WThermal Resistance Junction to Ambient
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
R θJA
VF
VALUE
MAX.
-
-
TYP.
-
-
MIN.
UNITS
-
mW
-
300
1.Alumina=0.4*0.3*0.024in.99.5% alumina
-55 to +150
-55 to +150
oC
oC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
0.118(3.000)
0.012(0.30)
0.020(0.50)
0.003(0.080)
0.006(0.150)
0.110(2.800)
0.019(2.00)
0.071(1.80)
0.100(2.550)
0.089(2.250)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.037(0.950)TYP
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS(2)
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 1mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 10µAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 100µAdc, IC= 0)
Base Cutoff Current (VCE= 30Vdc, VEB= 3.0Vdc)
Collector Cutoff Current (VCE= 30Vdc, VEB= 3.0Vdc)
DC Current Gain (IC= 0.1mAdc, VCE= 1.0Vdc)
Collector-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
(IC= 1.0mAdc, VCE= 1.0Vdc)
(IC= 10mAdc, VCE= 1.0Vdc)
(IC= 50mAdc, VCE= 1.0Vdc)
(IC= 100mAdc, VCE= 1.0Vdc)
V(BR)CEO 40 - Vdc
V(BR)CBO 60 - Vdc
V(BR)EBO 6.0 - Vdc
IBL
ICEX
- 50
- 50
nAdc
nAdc
Vdc
fT300 - MHz
hFE
60
300 -
30
70
100
40
-
-
-
-
VCE(sat) -0.2
- 0.3
Symbol Min Max Unit
(IC= 50mAdc, IB= 5.0mAdc)
Base-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
Current-Gain-Bandwidth Product (IC= 10mAdc, VCE= 20Vdc, f= 100MHz)
Cobo
Cibo
- 4.0 pF
pF
td
tr
ts
tf
NF
-
-
-
-
ns
dB
ns
hie
- 8.0
1.0 10 kohms
hre 0.5 8.0
100 400
X 10-
4
hfe
1.0 40
-5.0
-
hoe
200
50
35
35
µmhos
Output Capacitance (VCB= 5.0Vdc, IE= 0, f= 1.0MHz)
Input Capacitance (VEB= 0.5Vdc, IC= 0, f= 1.0MHz)
Voltage Feedback Ratio (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Output Admittance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
(VCC= 3.0Vdc, VBE= -0.5Vdc, IC= 10mAdc, IB1= 1.0mAdc)
(VCC= 3.0Vdc, IC= 10mAdc, IB1= IB2= 1.0mAdc)
Input lmpedance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Noise Figure (VCE= 5.0Vdc, IC= 100µAdc, RS= 1.0kohms, f= 1.0kHz)
Vdc
VBE(sat) 0.65 0.85
-0.95
(IC= 50mAdc, IB= 5.0mAdc)
Delay Time
Rise Time
Storage Time
Fall Time
RECTRON
NOTES : 2. Pulse Test: Pulse Width<300µs,Duty Cycle<2.0%
--
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBT3904LT1 )
Figure 1. Capacitance
2.0
3.0
5.0
7.0
10
1.0
0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
Figure 2. Charge Data
5000
1.0
Q, CHARGE (pC)
CAPACITANCE(PF)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Figure 5. Storage Time Figure 6. Fall Time
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5
100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5
100
5.0 7.0 30 50 200
10
30
7
20
Figure 4. Rise Time
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5
100
5.0 7.0 30 50 200
10
30
7
20
Figure 3. Turn-On Time
70
100
200
300
500
50
TIME (ns)
tr, RISE TIME (ns)tf, FALL TIME (ns)
t's, STORAGE TIME (ns)
1.0 2.0 3.0 10 20 70
5
100
5.0 7.0 30 50 200
10
30
7
20
IC,COLLECTOR CURRENT(mA)
IC,COLLECTOR CURRENT(mA)IC,COLLECTOR CURRENT(mA)
IC,COLLECTOR CURRENT(mA)
IC,COLLECTOR CURRENT(mA)
REVERSE BIAS VOLTAGE( VOLTS)
IC/IB =10
IC/IB =10
IC=IB =10
Cibo
QT
QA
Cobo
IC/IB =20
2.0V
15V
40V
IC/IB =10
IC/IB =20
IC/IB =10
td@VOB=0 V
tr@VCC=3.0V
IC/IB =20
t's=ts-1/8tf
IB1=IB2
VCC=40V
IB1=IB2
VCC=40V
IC=IB=10
VCC=40V
TJ= 25OC TJ=125OC
-
--
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBT3904LT1 )
Figure 7.
4
6
8
10
12
2
0.1
Figure 8.
0
1.0 2.0 4.0 10 20 40
0.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
f = 1.0 kHz
70
100
200
300
50
Figure 10. Output AdmittanceFigure 9. Current Gain
Figure 11. Input Impedance
Figure 12.Voltage Feedback Ratio
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
IC,COLLECTOR CURRENT(mA)IC,COLLECTOR CURRENT(mA)
IC,COLLECTOR CURRENT(mA)
f,FREQUENCY (KHz)
IC,COLLECTOR CURRENT(mA)
hre,VOLTAGE FEEDBACK RATIO (X 10-4)hoe,OUTPUT ADMITTANCE(µ mhos) NF,NOISE FIGURE(dB)
hfe,CURRENT GAIN
RS,SOURCE RESISTANCE(k OHMS)
NF,NOISE FIGURE(dB)hie,INPUT IMPEDANCE(k OHMS)
SOURCE RESISTANCE=200
Ω
I
C
=1.0mA
I
C
=0.5mA
SOURCE RESISTANCE=500
Ω
IC=0.5mA IC= 50
µ
A
IC= 100
µ
A
IC=1.0mA
SOURCE RESISTANCE=1.0k
I
C
= 50µA
SOURCE RESISTANCE=200
Ω
I
C
= 100µA
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBT3904LT1 )
0.3
0.5
0.7
1.0
2.0
0.2
0.1 0.5 2.0 3.0 10 50 70
0.2 0.3
0.1
100
1.00.7 200
30205.0 7.0
0.4
0.6
0.8
1.0
0.2
0.1 0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
0.070.050.030.020.01
Figure 15."ON" Voltages
0.4
0.6
0.8
1.0
1.2
0.2
Figure 14.Collector Saturation Region
Figure 16.Temperature Coefficients
Figure 13.DC Current Gain
1.0 2.0 5.0 10 20 50
0
100
- 0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
- 1.0
- 1.5
- 2.0
200
IC,COLLECTOR CURRENT(mA)
IB, BASE CURRENT (mA)
IC,COLLECTOR CURRENT(mA)
IC,COLLECTOR CURRENT(mA)
COEFFICIENT(mV/5C)
V,VOLTAGE(VOLTS) VCE,COLLECTOR EMITTER VOLTAGE(VOLTS) hFE,DC CURRENT GAIN (NORMALIZED)
θ
VB
FOR V
BE(sat)
VCE (sat) @ IC/IB=10
VBE (sat) @ IC/IB=10
VCE =1.0V
VBE @ VCE=1.0V
+25OC TO+125OC
+25OC TO+125OC
-55OC TO+25OC
-55OC TO+25OC
θ
VC
FOR V
CE(sat)
TJ=25OC
TJ=25OC
TJ=+125OC
-55OC
+25OC
IC=1.0 mA 10 mA 30 mA 100 mA
