AUIRFS4115
AUIRFSL4115
VDSS 150V
RDS(on) typ. 10.3m
max. 12.1m
ID 99A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
1 2015-10-27
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 99
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 70
IDM Pulsed Drain Current 396
PD @TC = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery 18 V/ns
EAS Single Pulse Avalanche Energy (Thermally Limited) 230
mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.40
°C/W
RJA Junction-to-Ambient (PCB Mount), D2 Pak ––– 40
D2Pak
AUIRFS4115
TO-262
AUIRFSL4115
S
D
G
S
D
G
D
Base part number Package Type Standard Pack
Form Quantity
AUIRFSL4115 TO-262 Tube 50 AUIRFSL4115
AUIRFS4115 D2-Pak Tube 50 AUIRFS4115
Tape and Reel Left 800 AUIRFS4115TRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET® Power MOSFET
AUIRFS/SL4115
2 2015-10-27
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.115mH, RG = 25, IAS = 63A, VGS =10V. Part not recommended for use above this value.
I
SD 62A, di/dt 1040A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at TJ approximately 90°C.
RJC value shown is at time zero.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 3.5mA
RDS(on) Static Drain-to-Source On-Resistance ––– 10.3 12.1 m VGS = 10V, ID = 62A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 97 ––– ––– S VDS = 50V, ID = 62A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 150V, VGS = 0V
––– ––– 250 VDS = 150V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Internal Gate Resistance ––– 2.3 –––
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 77 120
nC
ID = 62A
Qgs Gate-to-Source Charge ––– 28 ––– VDS = 75V
Qgd Gate-to-Drain Charge ––– 26 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 51 –––
td(on) Turn-On Delay Time ––– 18 –––
ns
VDD = 98V
tr Rise Time ––– 73 ––– ID = 62A
td(off) Turn-Off Delay Time ––– 41 ––– RG= 2.2
tf Fall Time ––– 39 ––– VGS = 10V
Ciss Input Capacitance ––– 5270 –––
pF
VGS = 0V
Coss Output Capacitance ––– 490 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 105 ––– ƒ = 1.0MHz, See Fig. 5
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 460 ––– VGS = 0V, VDS = 0V to 120V
Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 530 ––– VGS = 0V, VDS = 0V to 120V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 99
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 396 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 62A,VGS = 0V
trr Reverse Recovery Time ––– 86 ––– ns TJ = 25°C VDD = 130V
––– 110 ––– TJ = 125°C IF = 62A,
Qrr Reverse Recovery Charge ––– 300 ––– nC TJ = 25°C di/dt = 100A/µs
––– 450 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 6.5 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
nA
AUIRFS/SL4115
3 2015-10-27
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig. 4 Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
60µs PULSE WIDTH
Tj = 25°C
5.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 50V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 62A
VGS = 10V
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 20406080100
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 120V
VDS= 75V
VDS= 30V
ID= 62A
AUIRFS/SL4115
4 2015-10-27
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. Drain Current
Fg 9. Maximum Drain Current vs. Case Temperature
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
ID, Drain Current (A)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
140
150
160
170
180
190
200
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 3.5mA
-20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Energy (µJ)
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
VGS(th), Gate threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 1.0A
AUIRFS/SL4115
5 2015-10-27
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
R
1
R
1
R
2
R
2
C
C
Ci= iRi
Ci= iRi
Ri (°C/W) i (sec)
0.245 0.0059149
0.155 0.0006322
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 14 - Typical Recovery Current vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical Stored Charge vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
0
10
20
30
40
50
IRR (A)
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
10
20
30
40
50
IRR (A)
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
500
1000
1500
2000
2500
QRR (nC)
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
600
1200
1800
2400
3000
QRR (nC)
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
AUIRFS/SL4115
6 2015-10-27
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms
Fig 20a. Switching Time Test Circuit
Fig 21a. Gate Charge Test Circuit Fig 21b. Gate Charge Waveform
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 20b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
AUIRFS/SL4115
7 2015-10-27
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D2Pak (TO-263AB) Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRFS4115
Lot Code
Part Number
IR Logo
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
AUIRFS/SL4115
8 2015-10-27
TO-262 Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRFSL4115
Lot Code
Part Number
IR Logo
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRFS/SL4115
9 2015-10-27
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRFS/SL4115
10 2015-10-27
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level D2-Pak MSL1
TO-262
ESD
Human Body Model Class H2 (+/- 4000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
Revision History
Date Comments
10/27/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
