AUIRFS4115 AUIRFSL4115 AUTOMOTIVE GRADE HEXFET(R) Power MOSFET VDSS Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * RDS(on) typ. Package Type AUIRFSL4115 TO-262 AUIRFS4115 D2-Pak 10.3m max. 12.1m 99A ID D D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Base part number 150V S G G TO-262 AUIRFSL4115 D2Pak AUIRFS4115 G Gate D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 S D S Source Orderable Part Number AUIRFSL4115 AUIRFS4115 AUIRFS4115TRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V 99 ID @ TC = 100C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 70 396 375 VGS dv/dt EAS TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Single Pulse Avalanche Energy (Thermally Limited) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mount), D2 Pak Max. Units A W 2.5 20 18 230 -55 to + 175 W/C V V/ns mJ C 300 Typ. Max. Units --- --- 0.40 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRFS/SL4115 Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units 150 --- --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.18 --- V/C Reference to 25C, ID = 3.5mA RDS(on) Static Drain-to-Source On-Resistance --- 10.3 12.1 m VGS = 10V, ID = 62A VGS(th) Gate Threshold Voltage 3.0 --- 5.0 V VDS = VGS, ID = 250A gfs Forward Trans conductance Drain-to-Source Leakage Current --- --- --- 20 S IDSS 97 --- VDS = 50V, ID = 62A VDS = 150V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 100 RG Gate-to-Source Reverse Leakage Internal Gate Resistance --- --- --- 2.3 -100 --- V(BR)DSS Drain-to-Source Breakdown Voltage V A nA Conditions VGS = 0V, ID = 250A VDS = 150V,VGS = 0V,TJ =125C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- --- --- --- --- --- --- --- --- 77 28 26 51 18 73 41 39 5270 490 105 120 --- --- --- --- --- --- --- --- --- --- Coss eff.(ER) Effective Output Capacitance (Energy Related) --- 460 --- VGS = 0V, VDS = 0V to 120V Coss eff.(TR) Effective Output Capacitance (Time Related) --- 530 --- VGS = 0V, VDS = 0V to 120V Min. Typ. Max. Units --- --- 99 --- --- 396 --- --- --- --- --- --- --- 86 110 300 450 6.5 1.3 --- --- --- --- --- Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ID = 62A VDS = 75V nC VGS = 10V ns pF VDD = 98V ID = 62A RG= 2.2 VGS = 10V VGS = 0V VDS = 50V = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 62A,VGS = 0V TJ = 25C VDD = 130V ns TJ = 125C IF = 62A, TJ = 25C di/dt = 100A/s nC TJ = 125C A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.115mH, RG = 25, IAS = 63A, VGS =10V. Part not recommended for use above this value. ISD 62A, di/dt 1040A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C. RJC value shown is at time zero. 2 2015-10-27 AUIRFS/SL4115 1000 1000 100 BOTTOM 100 10 1 BOTTOM 5.0V 10 60s PULSE WIDTH 60s PULSE WIDTH 5.0V Tj = 175C Tj = 25C 0.1 0.1 1 1 10 0.1 100 Fig. 1 Typical Output Characteristics 100 Fig. 2 Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 3.0 1000 T J = 175C 100 T J = 25C 10 1 VDS = 50V 60s PULSE WIDTH ID = 62A VGS = 10V 2.5 2.0 1.5 1.0 0.5 0.1 2 4 6 8 10 12 14 16 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 100000 14.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd 10000 C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Ciss Coss 1000 Crss 100 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V ID= 62A 12.0 VDS = 120V VDS = 75V VDS = 30V 10.0 8.0 6.0 4.0 2.0 0.0 0 20 40 60 80 100 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-10-27 AUIRFS/SL4115 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175C 100 10 T J = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100sec 100 10msec 10 Tc = 25C Tj = 175C Single Pulse VGS = 0V 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 3.5 120 ID, Drain Current (A) 100 80 60 40 20 0 50 75 100 125 150 1000 200 Id = 3.5mA 190 180 170 160 150 140 -60 -40 -20 0 20 40 60 80 100 120 140160 180 175 T J , Temperature ( C ) T C , Case Temperature (C) Fg 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 6.0 VGS(th) , Gate threshold Voltage (V) 6.0 5.0 4.0 Energy (J) 100 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 25 10 VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) 3.0 2.0 1.0 0.0 -20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 1msec DC 5.0 4.0 3.0 ID = 250A ID = 1.0mA ID = 1.0A 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 12. Maximum Avalanche Energy vs. Drain Current 2015-10-27 AUIRFS/SL4115 Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 C 2 1 Ri (C/W) i (sec) 0.245 0.0059149 0.155 0.0006322 C 2 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 50 40 TJ = 25C TJ = 125C IF = 62A V R = 130V TJ = 25C 40 TJ = 125C 30 IRR (A) IRR (A) 50 IF = 42A V R = 130V 20 10 30 20 10 0 0 200 400 600 800 0 1000 0 diF /dt (A/s) 200 800 1000 Fig. 15 - Typical Recovery Current vs. dif/dt 2500 3000 IF = 42A VR = 130V 2000 IF = 62A VR = 130V 2400 TJ = 25C TJ = 125C 1500 QRR (nC) QRR (nC) 600 diF /dt (A/s) Fig. 14 - Typical Recovery Current vs. dif/dt 1000 500 TJ = 25C TJ = 125C 1800 1200 600 0 0 0 200 400 600 800 diF /dt (A/s) Fig. 16 - Typical Stored Charge vs. dif/dt 5 400 1000 0 200 400 600 800 1000 diF /dt (A/s) Fig. 17 - Typical Stored Charge vs. dif/dt 2015-10-27 AUIRFS/SL4115 Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 19a. Unclamped Inductive Test Circuit Fig 20a. Switching Time Test Circuit I AS Fig 19b. Unclamped Inductive Waveforms Fig 20b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 21a. Gate Charge Test Circuit 6 Qgd Qgodr Fig 21b. Gate Charge Waveform 2015-10-27 AUIRFS/SL4115 D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRFS4115 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 2015-10-27 AUIRFS/SL4115 TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRFSL4115 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-27 AUIRFS/SL4115 D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-27 AUIRFS/SL4115 Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level D2-Pak MSL1 TO-262 Human Body Model ESD Charged Device Model RoHS Compliant Class H2 (+/- 4000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 10/27/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. 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