DSS4140U-7 - DIODES INC - Product.Express

DSS4140U

Document number: DS31689 Rev. 2 - 2 1 of 5

www.diodes.com March 2009

DSS4140U

NEW PRODUCT

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Low Collector-Emitter Saturation Voltage

• Low Collector-Emitter Saturation Voltage, VCE(SAT)

• Complementary PNP Type Available (DSS5140U)

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper Plated

Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.006 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 40 V

Collector-Emitter Voltage VCEO 40 V

Emitter-Base Voltage VEBO 5 V

Collector Current - Continuous IC 1 A

Peak Pulse Collector Current ICM 2 A

Peak Base Current IBM 1 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C PD 400 mW

Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C R

θ

JA 313 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 1. No purposefully added lead.

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

Top View Device Schematic

E

B

C

Please click here to visit our online spice models database.

DSS4140U

Document number: DS31689 Rev. 2 - 2 2 of 5

www.diodes.com March 2009

DSS4140U

NEW PRODUCT

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage V

(

BR

)

CBO 40 ⎯ ⎯ V IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage (Note 5) V

(

BR

)

CEO 40 ⎯ ⎯ V IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage V

(

BR

)

EBO 5 ⎯ ⎯ V IE = 100μA, IC = 0

Collector Cutoff Current ICBO ⎯ ⎯ 100

50 nA

μA VCB = 40V, IE = 0

VCB = 40V, IE = 0, TA = 150°C

Collector Cutoff Current ICES ⎯ ⎯ 100 nA

VCE = 40V, VBE = 0

Emitter Cutoff Current IEBO ⎯ ⎯ 100 nA

VEB = 5V, IC = 0

ON CHARACTERISTICS (Note 5)

DC Current Gain hFE 300

300

200

⎯

900

⎯ ⎯ VCE = 5V, IC = 1mA

VCE = 5V, IC = 500mA

VCE = 5V, IC = 1A

Collector-Emitter Saturation Voltage VCE(SAT) ⎯

⎯

200

250

500 mV IC = 100mA, IB = 1mA

IC = 500mA, IB = 50mA

IC = 1A, IB = 100mA

Collector-Emitter Saturation Resistance RCE

(

SAT

)

⎯ ⎯ 500 mΩ IC = 1A, IB = 100mA

Base-Emitter Saturation Voltage VBE

(

SAT

)

⎯ ⎯ 1.2 V

IC = 1A, IB = 100mA

Base-Emitter Turn On Voltage VBE

(

ON

)

⎯ ⎯ 1.1 V

VCE = 5V, IC = 1A

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Cobo ⎯ 9 ⎯ pF VCB = 10V, f = 1.0MHz

Current Gain-Bandwidth Product fT 150 ⎯ ⎯ MHz VCE = 10V, IC = 50mA, f = 100MHz

SWITCHING CHARACTERISTICS

Turn-On Time ton ⎯ 60 ⎯ ns

VCC = 10V

IC = 0.5A, IB1 = IB2 = 25mA

Delay Time td ⎯ 30 ⎯ ns

Rise Time t

r

⎯ 30 ⎯ ns

Turn-Off Time toff ⎯ 380 ⎯ ns

Storage Time ts ⎯ 350 ⎯ ns

Fall Time tf ⎯ 30 ⎯ ns

Notes: 4. Measured under pulsed conditions. Pulse w idth = 300μs. Duty cycle ≤2%.

0

100

200

25 50 75 100 125 150

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(mW)

D

T , AMBIENT TEMPERAT URE (°C)

Fig. 1 Power Dissipation vs.

Am bi ent Tem per at ur e ( N ot e 3)

A

300

400

500

0

R = 313°C/W

θ

JA

0.1 1 10 100

V , COLLECTOR- EM IT TER VO LTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

0.001

0.01

0.1

1

10

I,

C

O

LLE

C

T

O

R

C

U

R

EN

T

(A)

C

Pw = 100ms

Pw = 10ms

Pw = 1ms

DC

DSS4140U

Document number: DS31689 Rev. 2 - 2 3 of 5

www.diodes.com March 2009

DSS4140U

NEW PRODUCT

0

200

400

600

800

1,000

1,200

1,400

1,600

1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig . 3 Typi cal DC Cu r rent Gain vs. Co ll ector Curr ent

h, D

C

U

R

EN

T

G

AIN

FE

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = 5V

CE

1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0.1

0.001

0.01

0.1

1

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION

CE(SAT)

VOLTAGE (V)

I/I = 10

CB

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 5 T ypical Base-Emitter T u rn-On Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

1.

2

V , BASE-EMI

T

E

R

T

U

R

N

-

O

N

V

O

L

T

A

G

E (V)

BE(ON)

0.1

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = 5V

CE

0.1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 6 Ty pical Base-Emitter Saturation V oltage

vs. C o ll ector Cu r r ent

1

0

0.2

0.4

0.6

0.8

1.0

1.2

V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E (V)

BE(SAT)

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I = 10

CB

/I

0

30

60

90

120

150

180

0.1 1 10 100

V , REVERSE VOLTAGE (V)

R

Fig . 7 Ty pi cal Capa citance Char acteristics

C

A

P

A

C

I

T

A

N

C

E (pF)

C

ibo

C

obo

f = 1MHz

DSS4140U

Document number: DS31689 Rev. 2 - 2 4 of 5

www.diodes.com March 2009

DSS4140U

NEW PRODUCT

0.00001 0.0001 0.001 0.01 0.1 1 10 100 10,000

Fig . 8 Transient Thermal Response (Note 3)

t , PULSE DURATION TIME (s)

1

0.001

0.01

0.1

1

r(t),

T

R

ANSIEN

T

H

E

R

MAL

R

ESIS

T

AN

C

E

1,000

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

12

θ

R (t) = r(t) *

θ

JA

R

R = 240°C/W

θ

JA

P(pk) t

1

t

2

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

Ordering Information (Note 5)

Part Number Case Packaging

DSS4140U-7 SOT-323 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Package Outline Dimensions

SOT-323

Dim Min Max Typ

A 0.25 0.40 0.30

B 1.15 1.35 1.30

C 2.00 2.20 2.10

D - - 0.65

G 1.20 1.40 1.30

H 1.80 2.20 2.15

J 0.0 0.10 0.05

K 0.90 1.00 1.00

L 0.25 0.40 0.30

M 0.10 0.18 0.11

α 0° 8° -

All Dimensions in mm

ZN6 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

A

M

JL

D

BC

H

K

G

ZN6

YM

DSS4140U

Document number: DS31689 Rev. 2 - 2 5 of 5

www.diodes.com March 2009

DSS4140U

NEW PRODUCT

Suggested Pad Layout

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages. LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

Dimensions Value (in mm)

Z 2.8

X 0.7

Y 0.9

C 1.9

E 1.0

XE

Y

C

Z