Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com Six IGBTMOD™
NX-Series Module
150 Amperes/1200 Volts
CM150TX-24S
112/11 Rev. 3
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM150TX-24S is a 1200V (VCES),
150 Ampere Six IGBTMOD™ Pow-
er Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 150 24
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.9 99.0
G 3.72 94.5
H 0.59 15.0
J 0.96 24.52
K 0.15 3.81
L 0.45 11.43
M 0.6 15.24
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 0.30 7.75
R 1.97±0.02 50.0±0.5
S 2.26 57.5
T 0.165 4.2
Dimensions Inches Millimeters
U 0.16 4.06
V 0.46 11.66
W 0.14 3.75
X 0.14 3.5
Y 0.03 0.8
Z 0.28 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.03 0.65
AD 0.05 1.15
AE 0.29 7.4
AF 0.047 1.2
AG 0.49 12.5
AH 0.12 3.0
AJ 0.17 Dia. 4.3 Dia.
AK 0.102 Dia. 2.6 Dia.
AL 0.088 Dia. 2.25 Dia.
P(54~56)
GWN(21)
N1(23~25)
Caution: Each (three) pin terminal of P/N/P1/N1/U/V/W is connected in the module,
however, all three pins should be used for external wiring.
GWP(17)
ESWP(18)
GVN(13)
GVP(9)
ESVP(10)
GUN(5)
GUP(1)
ESUP(2)
ESWN(22)ESWN(14)ESWN(6)
U(48~50) V(42~44) W(36~38)
N(59~61)
TH1
(31)
TH2
(32)
P1(28~30)
DETAIL "B"
A
AA
P
D
E
F
GK
K
K
K
K
KQ
K
L
V
W
Z
AH
C
AB
R B
N
(4 PLACES)
KKKKKK
U
X
KK
KK
L
K
K
K
K
LHLLLL
Y
S
DETAIL "A"
12345678910111213141516171819202122
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
JMMM
AC
K
AD AF
AE
AG
AL
AH
T
AK
AJ
DETAIL "B"
DETAIL "A"
Tolerance Otherwise Specified (mm)
The tolerance of size between
terminals is assumed to ±0.4
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
CM150TX-24S
Six IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
212/11 Rev. 3
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, TC = 120°C)*2 IC 150 Amperes
Collector Current (Pulse)*3 ICRM 300 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 1150 Watts
Emitter Current (TC = 25°C)*2,*4 IE*1 150 Amperes
Emitter Current (Pulse)*3 IERM*1 300 Amperes
Module
Characteristics Symbol Rating Units
Maximum Junction Temperature Tj(max) 175 °C
Maximum Case Temperature*2 TC(max) 125 °C
Operating Junction Temperature Tj(op) -40 to +150 °C
Storage Temperature Tstg -40 to +125 °C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO 2500 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0 0
18.4
19.9
30.6
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor
20.4
0
33.9
51.4
64.9
82.4
95.9
29.2
24.1
104.5
Di
UP Di
VP Di
WP
Tr
UP Tr
VP Tr
WP
Di
UN Di
VN Di
WN
Tr
UN Tr
VN Tr
WN
Th
CM150TX-24S
Six IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
312/11 Rev. 3
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA
Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 5.4 6.0 6.6 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts
(Terminal) IC = 150A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts
IC = 150A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
(Chip) IC = 150A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 150A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance Cies — — 15 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 3.0 nF
Reverse Transfer Capacitance Cres — — 0.25 nF
Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V — 350 — nC
Turn-on Delay Time td(on) — — 800 ns
Rise Time tr VCC = 600V, IC = 150A, VGE = ±15V, — — 200 ns
Turn-off Delay Time td(off) RG = 0Ω, Inductive Load — — 600 ns
Fall Time tf — — 300 ns
Emitter-Collector Voltage VEC*1 IE = 150A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts
(Terminal) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts
IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts
Emitter-Collector Voltage VEC*1 IE = 150A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
(Chip) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time trr*1 VCC = 600V, IE = 150A, VGE = ±15V — — 300 ns
Reverse Recovery Charge Qrr*1 RG = 0Ω, Inductive Load — 8.0 — µC
Turn-on switching Energy per Pulse Eon VCC = 600V, IC = IE = 150A, VGE = ±15V — 24.2 — mJ
Turn-off switching Energy per Pulse Eoff RG = 0Ω, Tj = 150°C — 16.0 — mJ
Reverse Recovery Energy per Pulse Err*1 Inductive Load — 12.2 — mJ
Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — 1.8 mΩ
Per Switch,TC = 25°C*2
Internal Gate Resistance rg Per Switch — 13 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0 0
18.4
19.9
30.6
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor
20.4
0
33.9
51.4
64.9
82.4
95.9
29.2
24.1
104.5
Di
UP Di
VP Di
WP
Tr
UP Tr
VP Tr
WP
Di
UN Di
VN Di
WN
Tr
UN Tr
VN Tr
WN
Th
CM150TX-24S
Six IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
412/11 Rev. 3
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R100 = 493Ω -7.3 — +7.8 %
B Constant B(25/50) Approximate by Equation*6 — 3375 — K
Power Dissipation P25 TC = 25°C*2 — — 10 mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*2 Rth(j-c)Q IGBT Part, Per 1/6 Module — — 0.13 K/W
Thermal Resistance, Junction to Case*2 Rth(j-c)D FWDi Part, Per 1/6 Module — — 0.23 K/W
Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied, — 0.015 — K/W
Case to Heatsink*2 Per 1 Module*7
Mechanical Characteristics
Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 10.28 — — mm
Terminal to Baseplate 14.27 — — mm
Clearance da Terminal to Terminal 10.28 — — mm
Terminal to Baseplate 12.33 — — mm
Weight m — 300 — Grams
Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm
Recommended Operating Conditons, Ta = 25°C
DC Supply Voltage VCC Applied Across P-N/P1-N1 Terminals — 600 850 Volts
Gate-Emitter Drive Voltage VGE(on) Applied Across 13.5 15.0 16.5 Volts
G*P-Es*P/G*N-Es*N Terminals
External Gate Resistance RG Per Switch 0 — 30 Ω
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 B(25/50) = In( R25)/( 1 – 1 )
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
HEATSINK SIDE
– : CONCAVE
+ : CONVEX
– : CONCAVE
X
Y
+ : CONVEX
HEATSINK SIDE
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
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58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0 0
18.4
19.9
30.6
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor
20.4
0
33.9
51.4
64.9
82.4
95.9
29.2
24.1
104.5
Di
UP Di
VP Di
WP
Tr
UP Tr
VP Tr
WP
Di
UN Di
VN Di
WN
Tr
UN Tr
VN Tr
WN
Th
CM150TX-24S
Six IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
512/11 Rev. 3
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
102
101
100
10-2
10-1
101
0 1.0 0.5 2.51.5 2.0 3.0
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
VGE = 0V
Cies
Coes
Cres
IC = 300A
IC = 150A
IC = 60A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
0 2 4 6 8 10
0
VGE = 20V
10
11
12
13.5
15
9
Tj =
25°C
300
200
250
100
50
150
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
3.5
2.5
3.0
0
2.0
1.5
0.5
1.0
0300200 25010050 150
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
10-1
COLLECTOR CURRENT, IC, (AMPERES)
103
101102
102
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
tf
103
103
101102
102
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
tf
103
GATE RESISTANCE, RG, (Ω)
103
100101
101
102
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 150°C
Inductive Load
tf
102
GATE RESISTANCE, RG, (Ω)COLLECTOR CURRENT, IC, (AMPERES)
103
100101
101
102
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive Load
tf
102
Tj = 25°C
Tj = 125°C
Tj = 150°C
CM150TX-24S
Six IGBTMOD™ NX-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
612/11 Rev. 3
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.13°C/W
(IGBT)
Rth(j-c) =
0.23°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
0
15
10
5
0
100 200 300 500400
IC = 150A
VCC = 600V
EMITTER CURRENT, IE, (AMPERES)EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102
102
101
103
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
REVERSE RECOVERY, Irr (A), trr (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102
102
101
103
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
REVERSE RECOVERY, Irr (A), trr (ns)
GATE RESISTANCE, RG, (Ω)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
102
10-1 100101
101
100
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 150°C
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
102
101102
100
103
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
102
101101
101102
100
103
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Err
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 150°C
Eon
Eoff
Err
GATE RESISTANCE, RG, (Ω)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
102
10-1 100101
101
100
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Err