
IRF/B/S/SL3207PbF
2www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.33mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
(BR)DSS Drain- to-Source Breakdown Voltage 75 ––– ––– V
∆
(BR)DSS
∆
J Breakdown Voltage Temp. Coefficient ––– 0.069 ––– V/°C
DS(on) Static Drain-to-Source On-Resistance ––– 3.6 4.5 mΩ
GS(th) Gat e Thres hol d Voltage 2.0 ––– 4.0 V
DSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
GSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Rever se Leak age – –– ––– -200
GGate Input Re si st ance ––– 1.2 ––– Ωf = 1MHz , open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 150 ––– ––– S
gTotal Gate Charge ––– 180 260 nC
gs Gate-to-Source Charge ––– 48 –––
gd Gate-to-Drain ("Miller") C harge ––– 68 –––
d(on) Turn-On Delay Time ––– 29 ––– ns
rRise Time ––– 120 –––
d(off) Turn -Off De la y Ti me ––– 68 –––
fFall Time ––– 74 –––
iss Input Capaci tance ––– 7600 ––– pF
oss Output Capacitance ––– 710 –––
rss Reverse Transfer Capacitance ––– 390 –––
oss
Effective Output Capacit ance (Energy Related)
i
––– 920 –––
oss
Effective Output Capacitance (Time Related)
h
––– 1010 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
SConti nuous Source Current ––– ––– 170
c
A
(Body Diode)
SM Pulsed Source Current ––– ––– 720
(Body Diode)
di
SD Diode Forwar d Voltage ––– ––– 1.3 V
rr Reverse Recovery Time ––– 42 63 ns
J
R
––– 49 74
J
F
rr Rev erse Recover y C har ge –– – 65 98 nC
J
g
––– 92 140
J
RRM Rev erse Recover y C urr ent –– – 2.6 ––– A
J
on Forward Turn-On Time Intrinsi c turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 75A
RG = 2.6Ω
VGS = 10V
g
VDD = 48V
TJ = 25°C, IS = 75A, VGS = 0V
g
integr al reverse
p-n juncti on diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1m A
d
VGS = 10V, ID = 75A
g
VDS = VGS, ID = 250µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V , T J = 125°C
MOSFET symbol
showing the
VDS = 60V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, V DS = 0V to 60V
j
, See Fig.1
VGS = 0V, V DS = 0V to 60V
h
, See Fig. 5
Conditions
VDS = 50V, ID = 75A
ID = 75A
VGS = 20V
VGS = - 20V