
IRFB/S/SL3607PbF
2www.irf.com
S
D
G
ISD 46A, di/dt 1920A/μs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
Ris measured at TJ approximately 90°C.
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25, IAS = 46A, VGS =10V. Part not recommended for use
above this value.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 75 ––– ––– V
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.096 ––– V/°C
R
Static Drain-to-Source On-Resistance ––– 7.34 9.0 m
V
Gate Threshold Voltage 2.0 ––– 4.0 V
I
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 115 ––– ––– S
Q
Total Gate Charge ––– 56 84 nC
Q
Gate-to-Source Charge ––– 13 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 16 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 40 –––
R
Internal Gate Resistance
–––
0.55 –––
t
Turn-On Delay Time ––– 16 ––– ns
t
Rise Time ––– 110 –––
t
Turn-Off Delay Time ––– 43 –––
t
f
Fall Time ––– 96 –––
C
iss
Input Capacitance ––– 3070 ––– pF
C
oss
Output Capacitance ––– 280 –––
C
Reverse Transfer Capacitance ––– 130 –––
C
eff. (ER) Effective Output Capacitance (Energy Related)
––– 380 –––
C
eff. (TR) Effective Output Capacitance (Time Related)
h
––– 610 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 80
c
A
(Body Diode)
I
Pulsed Source Current ––– ––– 310
d
V
Diode Forward Voltage ––– ––– 1.3 V
dv/dt Peak Diode Recovery ––– 27 ––– V/ns
t
rr
Reverse Recovery Time ––– 33 50 ns T
J
= 25°C V
R
= 64V,
––– 39 59 T
J
= 125°C I
F
= 46A
Q
Reverse Recovery Charge ––– 32 48 nC T
= 25°C di/dt = 100A/μs
g
––– 47 71 T
= 125°C
I
Reverse Recovery Current ––– 1.9 ––– A T
= 25°C
t
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
R
= 6.8
V
GS
= 10V
g
V
= 49V
I
D
= 46A, V
DS
=0V, V
GS
= 10V
I
= 46A
Conditions
V
= 50V, I
= 46A
I
= 46A
V
GS
= 20V
V
GS
= -20V
V
= 60V, V
= 0V, T
= 125°C
showing the
V
= 38V
Conditions
V
GS
= 10V
g
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
= 0V, V
= 0V to 60V
j
V
= 0V, V
= 0V to 60V
h
T
= 175°C, I
= 46A, V
= 75V
f
T
= 25°C, I
= 46A, V
= 0V
g
integral reverse
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
d
V
= 10V, I
= 46A
g
V
= V
, I
= 100μA
V
= 75V, V
= 0V