AUIRFP2602
V(BR)DSS 24V
RDS(on) typ. 1.25mΩ
max. 1.6mΩ
ID (Silicon Limited) 380A
ID (Package Limited) 180A
Features
• Advanced Process Techn ology
• Low On-Resistance
• 175°C Operating Temp erature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
1 2016-2-16
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 380
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 270
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 180
IDM Pulsed Drain Current 1580
PD @TC = 25°C Maximum Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 400
EAS (Tested) Single Pulse Avalanche Energy Tested Value 1011
IAR Avalanche Current See Fig.14,15, 17a, 17b A
EAR Repetitive Avalanche Energy mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition be yon d those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratin gs are measured under bo ard mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.40
°C/W
RθCS Case-to-Sink, Flat, Greased Surface 0.24 –––
RθJA Junction-to-Ambient ––– 40
TO-247AC
AUIRFP2602
S
D
G
Base part number Package Type Standard Pack
Form Quantity
AUIRFP2602 TO-247AC Tube 25 AUIRFP2602
Orderable Part Number
G D S
Gate Drain Source
AUIRFP2602
2 2016-2-16
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fi g. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.025mH, RG = 25Ω, IAS = 180A, VGS =10V. Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitiv e avalanche performance.
This value determined from sample failur e population. 100% tested to this value in pro duction.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 180A. Note that
current limitations arising from heating of the device lead s may occur with some lead mounting arrangements.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 24 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 1.25 1.6 mΩ VGS = 10V, ID = 180A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductan ce 230 ––– ––– S VDS = 10V, ID = 180A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =24 V, VGS = 0V
––– ––– 250 VDS =24V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characte ristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 260 390 nC
ID = 180A
Qgs Gate-to-Source Charge ––– 72 ––– VDS = 12V
Qgd Gate-to-Drain Charge ––– 100 ––– VGS = 10V
td(on) Turn-On Delay Time ––– 70 –––
ns
VDD = 12V
tr Rise Time ––– 490 ––– ID = 180A
td(off) Turn-Off Delay Time ––– 150 ––– RG= 2.5Ω
tf Fall Time ––– 270 ––– VGS = 10V
LD Internal Drain Inductance ––– 5.0 –––
pF
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 13 ––– from package
and center of die contact
Ciss Input Capacitance ––– 11220 ––– VGS = 0V
Coss Output Capacitance ––– 4800 ––– VDS = 19V
Crss Reverse Transfer Capacitance ––– 2660 ––– ƒ = 1.0KHz
Coss Output Capacitance ––– 13020 ––– VGS=0V, VDS=1.0V ,ƒ = 1.0KHz
Coss Output Capacitance 4800 VGS=0V, VDS=19V ,ƒ = 1.0KHz
Coss eff. Effective Output Capacitance ––– 6710 ––– VGS = 0V, VDS = 0V to 19V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 380 A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 1580 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 180A,VGS = 0V
trr Reverse Recovery Time ––– 55 83 ns TJ = 25°C ,IF = 180A, VDD =12V
Qrr Reverse Recovery Charge ––– 56 84 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRFP2602
3 2016-2-16
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteri stics Fig. 4 Typical Forward T ra nsconductance vs. Drain Current
Fig. 1 Typical Output Characteristics
Fig 5. Typical Source-Drain Diode Forward Voltage Fig 6. Normalized On-Resistance vs. Temperature
0.1 110
VDS, D rai n-to- Source V oltage (V )
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110
VDS, Drain-to- S ource Voltage (V )
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 3 4 5 6 7 8 9
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 10V
≤60µs PULSE WIDTH
0 40 80 120 160 200
ID, Drain-to-Source Current (A)
0
50
100
150
200
250
300
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 180A
VGS = 10V
AUIRFP2602
4 2016-2-16
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 7 Typical Capacitance vs. Drain-to-Source Voltage
110 100
VDS, Drain-to-Source Voltage (V)
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + C
gd, Cds SHORTED
Crss = Cgd
Coss = C
ds + C
gd
Coss
Crss
Ciss
0 50 100 150 200 250 300
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 19V
VDS= 12V
ID= 180A
1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
Fig 9. Maximum Safe Operating Area
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
50
100
150
200
250
300
350
400
ID, Drain Current (A)
Limited By Package
Fig 10. Maximum Drain Current vs. Case Temperature
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τI (sec)
0.0224 0.00002
0.1778 0.00169
0.1362 0.013883
0.0641 0.000095
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
Ci= τi/Ri
τ
C
τ
C
τ
4
τ
4
R
4
R
4
AUIRFP2602
5 2016-2-16
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 14. Typical Avalanche Current vs. Pulse wi dth
Notes on Repetiti ve Avalanche Cur ves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC
Iav = 2∆T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
Fig 13. Threshold Voltage vs. Temperature
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
1600
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 54A
95A
BOTTOM 180A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
VGS(th), Gate Threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% D uty C ycle
ID = 180A
AUIRFP2602
6 2016-2-16
Fig 16. Peak Diode Recov ery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Fig 17a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 17b. Unclamped Inductive Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 18b. Gate Charge Waveform
Fig 18a. Gate Charge Test Circuit
Fig 19a. Switching Time Test Circuit Fig 19b. Switching Time Waveforms
1K
VCC
DUT
0
L
AUIRFP2602
7 2016-2-16
Note: For the most current drawing plea se refer to IR website at http://www.irf.com/package/
TO-247AC Part Marking Information
YWWA
XX • XX
Date Code
Y= Year
WW= Work Week
AUIRFP2602
Lot Code
Part Number
IR Logo
TO-247AC Package Outline (Dimensio ns are
AUIRFP2602
8 2016-2-16
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
TO-247AC N/A
ESD
Machine Model Class M4 (+/- 800V)†
AEC-Q101-002
Human Body Model Class H2 (+/- 4000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
Moisture Sensitivity Level
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in pe rsonal injury.
Revision History
Date Comments
2/16/2016 • Updated d atasheet with corporate template
• Corrected typo, Capacitance test condition from VDS=25V to VDS=19V on page 2
† Highest passing voltage.
