IRFB4019PBF - International Rectifier

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3/2/06

IRFB4019PbF

Notes  through  are on page 2

PD - 97075

DIGITAL AUDIO MOSFET

Features

• Key Parameters Optimized for Class-D Audio

Amplifier Applications

• Low RDSON for Improved Efficiency

• Low QG and QSW for Better THD and Improved

Efficiency

• Low QRR for Better THD and Lower EMI

• 175°C Operating Junction Temperature for

Ruggedness

• Can Deliver up to 200W per Channel into 8Ω Load in

Half-Bridge Configuration Amplifier

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications.

TO-220AB

GDS

Gate Drain Source

Absolute Maximum Ratings

Parameter Units

VDS Drain-to-Source Voltage V

VGS Gate-to-Source Voltage

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

IDM Pulsed Drain Current c

PD @TC = 25°C Power Dissipation fW

PD @TC = 100°C Power Dissipation f

Linear Derating Factor W/°C

TJ Operating Junction and °C

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

RθJC Junction-to-Case f––– 1.88

RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

RθJA Junction-to-Ambient f––– 62

Max.

±20

150

0.5

10lbxin (1.1Nxm)

-55 to + 175

300

VDS 150 V

RDS(ON) typ. @ 10V 80 m:

Qg typ. 13 nC

Qsw typ. 5.1 nC

RG(int) typ. 2.4 Ω

TJ max 175 °C

Key Parameters

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 Repetitive rating; pulse width limited by max. junction temperature.

 Starting TJ = 25°C, L = 1.46mH, RG = 25Ω, IAS = 10A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Notes:

 Rθ is measured at TJ of approximately 90°C.

 Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive

avalanche information

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BVDSS Drain-to-Source Breakdown Voltage 150 ––– ––– V

∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C

RDS(on) Static Drain-to-Source On-Resistance ––– 80 95 mΩ

VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 V

∆VGS(th)/∆TJGate Threshold Voltage Coefficient ––– -13 ––– mV/°C

IDSS Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 14 ––– ––– S

QgTotal Gate Charge ––– 13 20

Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.3 –––

Qgs2 Post-Vth Gate-to-Source Charge ––– 0.95 ––– nC

Qgd Gate-to-Drain Charge ––– 4.1 –––

Qgodr Gate Charge Overdrive ––– 4.7 ––– See Fig. 6 and 19

Qsw Switch Charge (Qgs2 + Qgd)––– 5.1 –––

RG(int) Internal Gate Resistance ––– 2.4 ––– Ω

td(on) Turn-On Delay Time ––– 7.0 –––

trRise Time ––– 13 –––

td(off) Turn-Off Delay Time ––– 12 ––– ns

tfFall Time ––– 7.8 –––

Ciss Input Capacitance ––– 800 –––

Coss Output Capacitance ––– 74 ––– pF

Crss Reverse Transfer Capacitance ––– 19 –––

Coss Effective Output Capacitance ––– 99 –––

LDInternal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

LSInternal Source Inductance ––– 7.5 ––– from package

Avalanche Characteristics

Parameter Units

EAS Single Pulse Avalanche Energy

IAR Avalanche Current

g

EAR Repetitive Avalanche Energy

Diode Characteristics

Parameter Min. Typ. Max. Units

IS @ TC = 25°C Continuous Source Current ––– ––– 17

(Body Diode) A

ISM Pulsed Source Current ––– ––– 51

(Body Diode)

c

VSD Diode Forward Voltage ––– ––– 1.3 V

trr Reverse Recovery Time ––– 64 96 ns

Qrr Reverse Recovery Charge ––– 160 240 nC

––– 73

See Fig. 14, 15, 17a, 17b

ID = 10A

Typ. Max.

ƒ = 1.0MHz, See Fig.5

TJ = 25°C, IF = 10A

di/dt = 100A/µs

TJ = 25°C, IS = 10A, VGS = 0V

showing the

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 10A

VDS = VGS, ID = 50µA

VDS = 150V, VGS = 0V

VGS = 0V, VDS = 0V to 120V

VDS = 150V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

VGS = 10V

ID = 10A

VGS = 0V

MOSFET symbol

RG = 2.4Ω

VDS = 10V, ID = 10A

Conditions

and center of die contact

VDD = 75V, VGS = 10V

e

VDS = 75V

VDS = 50V

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Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

100

ID, Drain-to-Source Current (A)

≤ 60µs PULSE WIDTH

Tj = 25°C

5.0V

VGS

TOP 15V

12V

10V

8.0V

7.0V

6.0V

5.5V

BOTTOM 5.0V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

≤ 60µs PULSE WIDTH

Tj = 175°C

5.0V

VGS

TOP 15V

12V

10V

8.0V

7.0V

6.0V

5.5V

BOTTOM 5.0V

2 4 6 8 10

VGS, Gate-to-Source Voltage (V)

0.1

1.0

10.0

100.0

ID, Drain-to-Source Current

(Α)

VDS = 25V

≤ 60µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

-60 -40 -20 020 40 60 80 100 120 140 160 180

TJ, Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

3.0

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = 10A

VGS = 10V

110 100 1000

VDS, Drain-to-Source Voltage (V)

100

1000

10000

C, Capacitance (pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

0 5 10 15 20

QG Total Gate Charge (nC)

VGS, Gate-to-Source Voltage (V)

VDS= 120V

VDS= 75V

VDS= 30V

ID= 10A

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1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z

thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

Fig 10. Threshold Voltage vs. Temperature

0.0 0.5 1.0 1.5

VSD, Source-to-Drain Voltage (V)

0.1

100

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

25 50 75 100 125 150 175

TJ , Junction Temperature (°C)

ID , Drain Current (A)

-75 -50 -25 025 50 75 100 125 150 175

TJ , Temperature ( °C )

1.0

2.0

3.0

4.0

5.0

VGS(th) Gate threshold Voltage (V)

ID = 50µA

Ri (°C/W)

τι

(sec)

0.535592 0.000222

0.913763 0.001027

0.432454 0.006058

Ci= τi/Ri

1 10 100 1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

IRFB4019PbF

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Fig 13. Maximum Avalanche Energy Vs. Drain Current

Fig 12. On-Resistance Vs. Gate Voltage

Fig 14. Typical Avalanche Current Vs.Pulsewidth

Fig 15. Maximum Avalanche Energy Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long as neither

Tjmax nor Iav (max) is exceeded

3. Equation below based on circuit and waveforms shown in

Figures 17a, 17b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 14, 15).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

4 6 8 10 12 14 16

VGS, Gate-to-Source Voltage (V)

0.0

0.1

0.2

0.3

0.4

0.5

RDS(on), Drain-to -Source On Resistance (

Ω)

TJ = 25°C

TJ = 125°C

ID = 10A

25 50 75 100 125 150 175

Starting TJ, Junction Temperature (°C)

100

150

200

250

300

EAS, Single Pulse Avalanche Energy (mJ)

I D

TOP 1.3A

2.3A

BOTTOM 10A

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 1% Duty Cycle

ID = 10A

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

100

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Τ j = 25°C and

Tstart = 150°C.

0.01

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Tj = 150°C and

Tstart =25°C (Single Pulse)

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Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms

VGS

VDS

90%

10%

td(on) td(off)

trtf

VGS

Pulse Width < 1µs

Duty Factor < 0.1%

VDD

VDS

D.U.T

Fig 17b. Unclamped Inductive Waveforms

Fig 17a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

Fig 19a. Gate Charge Test Circuit Fig 19b Gate Charge Waveform

Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 16. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period

*** VGS = 5V for Logic Level Devices

***







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T



* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

IRFB4019PbF

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Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 03/06

TO-220AB packages are not recommended for Surface Mount Application.

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

LOT CODE 1789

EXAMPLE: THIS IS AN IRF1010

Note: "P" in assembly line position

indicates "L ead - F r ee"

IN THE ASSEMBLY LINE "C"

AS S EMBLED ON WW 19, 2000

INTERNATIONAL PART NUMBER

RECTIFIER

LOT CODE

AS S E MB L Y

LOGO

YEAR 0 = 2000

DAT E CODE

WE E K 19

LINE C

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/