
IRFB4019PbF
2www.irf.com
S
D
G
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.46mH, RG = 25Ω, IAS = 10A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Rθ is measured at TJ of approximately 90°C.
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 150 ––– ––– V
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 80 95 mΩ
VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 V
∆VGS(th)/∆TJGate Threshold Voltage Coefficient ––– -13 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 14 ––– ––– S
QgTotal Gate Charge ––– 13 20
Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.3 –––
Qgs2 Post-Vth Gate-to-Source Charge ––– 0.95 ––– nC
Qgd Gate-to-Drain Charge ––– 4.1 –––
Qgodr Gate Charge Overdrive ––– 4.7 ––– See Fig. 6 and 19
Qsw Switch Charge (Qgs2 + Qgd)––– 5.1 –––
RG(int) Internal Gate Resistance ––– 2.4 ––– Ω
td(on) Turn-On Delay Time ––– 7.0 –––
trRise Time ––– 13 –––
td(off) Turn-Off Delay Time ––– 12 ––– ns
tfFall Time ––– 7.8 –––
Ciss Input Capacitance ––– 800 –––
Coss Output Capacitance ––– 74 ––– pF
Crss Reverse Transfer Capacitance ––– 19 –––
Coss Effective Output Capacitance ––– 99 –––
LDInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
EAS Single Pulse Avalanche Energy
d
mJ
IAR Avalanche Current
g
A
EAR Repetitive Avalanche Energy
g
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
IS @ TC = 25°C Continuous Source Current ––– ––– 17
(Body Diode) A
ISM Pulsed Source Current ––– ––– 51
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 64 96 ns
Qrr Reverse Recovery Charge ––– 160 240 nC
––– 73
See Fig. 14, 15, 17a, 17b
ID = 10A
Typ. Max.
ƒ = 1.0MHz, See Fig.5
TJ = 25°C, IF = 10A
di/dt = 100A/µs
e
TJ = 25°C, IS = 10A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 10A
e
VDS = VGS, ID = 50µA
VDS = 150V, VGS = 0V
VGS = 0V, VDS = 0V to 120V
VDS = 150V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
ID = 10A
VGS = 0V
MOSFET symbol
RG = 2.4Ω
VDS = 10V, ID = 10A
Conditions
and center of die contact
VDD = 75V, VGS = 10V
e
VDS = 75V
VDS = 50V