FEATURES
* High Speed Switching
* Low Saturation Voltage
: VCE(sat) = 1.95 V (@ Ic=12A)
* High Input Impedance
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
ABSOLUTE MAXIMUM RATINGS
Notes:
(
1
)
Repetiti ve r a ti n
g
: Pulse width limited b
y
max.
j
unction temperature
Symbol
VCES
VGES
IC
ICM (1)
PC
Tj
Tstg
TL
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ Tc = 25°C
Collector Current @ Tc = 100°C
Pulsed Collector Current
Maximum Power Dissipation @Tc = 25°C
Maximum Power Dissipation @Tc = 100°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. For Soldering
Pu r po s es, 1/ 8 ” from case for 5 second s
Rating
600
±20
23
12
92
100
40
-55 ~ 150
-55 ~ 150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
G
C
E
TO-3P
SGH23N60UF
N-CHANNEL IGBT
1999 Fairchild Semiconductor Corporation
Rev.B
ELECTRICAL CHARACTERISTICS
(Tc=25°C,Unless Otherwise Specified)
Characteristics
C - E Breakd own Voltag e
Temperatur e Coeff. of
Breakdown Voltage
G - E thresh old vol tage
Collec tor cutoff Current
G - E leakage Current
Collec tor to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emi tter Charge
Gate-Collector Charge
Internal Emitter Inductance
Symbol
BVCES
∆VCES/
∆TJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Min
600
-
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
0.6
5.5
-
-
1.95
2.6
720
65
26
12
20
55
100
0.11
0.19
0.3
48
11
14
7.5
Max
-
-
7.5
250
100
2.6
-
-
-
-
-
-
85
220
-
-
0.5
72
16
21
-
Units
V
V/°C
V
uA
nA
V
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
nH
Test Conditions
VGE = 0 V , IC = 250uA
VGE = 0 V , IC = 1mA
IC = 12mA , VCE = V GE
VCE = VCES , VGE = 0V
VGE = V GES , VCE = 0V
Ic=12A, VGE = 15V
Ic=23A, VGE = 15V
VGE = 0V , f = 1MHz
VCE = 30V
VCC = 300V , IC = 12A
VGE = 15V
RG = 23Ω
Inductive Load
Vcc = 300V
VGE = 15V
Ic = 12A
Measured 5mm from PKG
SGH23N60UF
N-CHANNEL IGBT
THERMAL RESISTANCE
Symbol
RθJC
RθJA
RθCS
Characteristics
Junction-to-Case
Junction-to-Case
Case-to-Sink
Units
°C/W
°C/W
°C/W
Typ
-
-
0.24
Max
1.2
40
-
Min
-
-
-
SGH23N60UF
N-CHANNEL IGBT
Fig.1 Typical Load Current vs. Frequency Fig.2 Typical Output Char acteristics
Fig.3 Maximum Collector Current vs.
Case Temperature Fig.4 Collector to Emitter Voltage vs.
Case Temperature
20 40 60 80 100 120 140
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
Ic = 12A
Ic = 23A
Vce(sat) [V]
Tc [
&
]
0246810
0
20
40
60
80
100
Tc = 100
&
Tc = 25
&
Ic [A]
Vc e [ V]
0
5
10
15
20
25
30
25 50 75 100 125 150
Vge = 15V
Tc [
&
]
Max DC Curr e nt [A]
0
5
10
15
20
0.1 1 10 100 1000
Duty cycle : 50%
Tc = 100
&
Power Dissi pation = 21W
Vcc = 300V
Load Current : peak of square wave
Fr equen cy [kHz ]
Load Curren t [ A]
SGH23N60UF
N-CHANNEL IGBT
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
Fig.6 Typical Capacitan ce vs.
Collector to Emitter Voltage Fig.7 Typical Gate Charge vs.
Gate to Emitter Voltage
110
0
200
400
600
800
1000
1200
Cres
Coes
Cies
Ca p acitance [pF]
Vc e [ V] 010203040
0
2
4
6
8
10
12
14
16
18 Vcc = 300V
Ic = 12A
VGE [V]
Qg [nC]
0.00001 0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
10
0.5
0.2
0.1
0.05
0.02
0.01
s ingle puls e
Therm al Response [Zthjc]
Rec tangul ar Puls e Durati on [s ec]
Pdm
t1 t2
Dut
y
factor D = t1 / t2
Peak T
j
= Pdm x Zth
j
c + Tc
SGH23N60UF
N-CHANNEL IGBT
Fig.8 Typical Switching Loss vs.
Gate Resistance Fig.9 Typical Switching Loss vs.
Case Temperature
Fig.10 Typical Switching loss vs.
Collector to Emitter Current Fig.11 Turn-off SOA
0 40 80 120 160 200
0
100
200
300
400
500
600
700 Vcc = 300V
Ic = 12A Esw
Eon
Eoff
Ener gy [uJ]
Rg [
+
]
4 8 12 16 20 24
0.0
0.2
0.4
0.6
0.8
1.0
1.2 Vcc = 300V
Rg =2 3Ω
Tc = 100
&
Eon
Eoff
Esw
Ener gy [mJ]
Ic [A]
20 40 60 80 100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4 Vcc = 300V
Rg = 2 3Ω
Vge = 15V
Ic = 6 A
Ic = 12A
Ic =24A
Ener gy [mJ]
Tc [
&
]
1 10 100 1000
1
10
100
Safe Operating Area
Vge = 20V , Tc = 100
&
Ic [A]
Vc e [ V]
SGH23N60UF
N-CHANNEL IGBT
TRADEMARKS
The fol lowing ar e registered and unregistered trademarks Fairchild Semiconductor owns or is authorized t o use and is
not int ended to be an exhaus ti ve list of al l such trademarks.
ACEXTM
CoolFETTM
CROSSVOLTTM
E2CMOSTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrenchTM
QSTM
QuietSeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO I MPROVE RELIABILITY, FUN CTION OR DESIGN. FAIRCHILD DOES NOT ASSUM E ANY
LIABILITY ARISING OUT O F THE APPLICATION OR USE OF ANY PRODUCT OR CI RCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Lif e support dev ices or sys tems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b ) support or sust ain life, or © whose
failure t o perform when properly used i n accordance
with i nstructions for use provided in the label ing, can be
reasonabl y expected t o result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose fai lure to perform can be
reasonably expected to cause the failur e of the life support
device or system, or to affect its safety or effectiveness.
LIFE SUPPORT POLICY
Defini t io n of Terms
Datasheet Identification
Advance Inform ati on
Product Status
Formative or
In D e sign
Definition
This dat asheet contains th e design specificati ons for product
development. Specifications m ay change in any manner wit hout
notice.
Preli minary First Production This dat asheet contains pre li m inary data, and supplem entary data
will be published at a la ter data.
Fairc hild Semiconductor reserve s the right to make changes at any
time wit hout notices in order t o improve design.
No Identi ficati on Needed Full Production This dat asheet contains final specificati ons. Fairchild Semiconduct or
reserves the right to make changes at any time without notice in
order to improve design.
Obsolete Not In Produ cti on This datashee t contains specifications on a product that has been
discont inued by Fairchild semiconductor .
The datasheet is pri nted for ref erence information only.