BU208A
BU508A/BU508AFI
HIGH VOLTAG E FAST-SWITCHING
NPN POWER TRANSISTORS
■STMicr o electronics PREF E RRED
SALESTYPES
■HIGH VOLT A G E CAPA BILIT Y (> 1500 V )
■FULLY INS ULAT E D PACKA G E (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208A, BU508A and BU508AFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and use a Hollow Emitter structure to enhance
switching speeds.
INT E R NAL SCH E M ATI C DIAG RA M
April 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1500 V
VCEO Collector-Emitter Voltage (IB = 0) 700 V
VEBO Emitter-Base Voltage (IC = 0) 10 V
ICCollector Current 8 A
ICM Collector Pe ak Cu rrent (tp < 5 ms) 15 A
BU208A BU508A BU508AFI
TO - 3 TO - 218 ISOWATT218
Ptot Total Dissipation at Tc = 25 oC 150 125 50 W
Visol Insulation Withsta nd Vo ltage (RMS) from All
Three L eads to Exernal Heatsink 2500 V
Tstg Storage Temp erature -65 to 175 -65 to 150 -65 to 150 oC
TjMax. Operating Junctio n Te mperature 175 150 150 oC
123
TO -218 ISOW AT T 21 8
123
12
TO-3
For TO-3 :
C = Tab
E = Pin2.
®
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Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)