3-2
DC and Switching Characteristics
iCE40LM Family Data Sheet
Power-On-Reset Voltage Levels1
Power Up Sequence
For all iCE40LM devices, it is required to have the VCC/VCCPLL power supply powered up before all other power
supplies. The VCC/VCCPLL has to be higher than 0.5 V before other supplies are powered from GND.
In addition, for all iCE40LM devices, it is required that VCCSPI not be the last power supply to ramp up. The VCCSPI
has to be higher than 0.5 V before the last supply is ramped.
In the required power up sequence, VCC/VCCPLL should be ramped first. Following VCC/VCCPLL, VCCSPI should be
ramped next, followed by the remaining supplies. On the 25-pin WLCSP, VCCPLL is connected to VCC, and is pow-
ered up together with VCC. On the 25-pin WLCSP and 36-pin caBGA, VCCIO_2 is connected to VCC_SPI, and should
be powered up right after VCC/VCCPLL with VCCSPI. Due to this connection, VCCIO_0 cannot connect to VCCIO_2
even if they are at the same supply voltage. The sequence is defined below:
• For 49-pin caBGA: VCC, VCCPLL, VCC_SPI, VCCIO_0 and VCCIO_2; Order of VCCIO_0 and VCCIO_2 is not important.
• For 36-pin caBGA: VCC, VCCPLL, VCC_SPI/VCCIO_2, VCCIO_0
• For 25-pin WLCSP: VCC/VCCPLL, VCC_SPI/VCCIO_2, VCCIO_0
There is no power down sequence required. However, when partial power supplies are powered down, it is
required that the above sequence is followed when these supplies are powered up again.
ESD Performance
Please contact Lattice Semiconductor for additional information.
DC Electrical Characteristics
Over Recommended Operating Conditions
Symbol Parameter Min. Max. Units
VPORUP Power-On-Reset ramp-up trip point (circuit monitoring
VCC, VCCIO_2 and VCC_SPI)
VCC 0.67 0.99 V
VCCIO_2, VCC_SPI 0.70 1.59 V
VPORDN Power-On-Reset ramp-down trip point (circuit monitor-
ing VCC, VCCIO_2 and VCC_SPI)
VCC —0.66 V
VCCIO_2, VCC_SPII—1.59 V
1. These POR trip points are only provided for guidance. Device operation is only characterized for power supply voltages specified under rec-
ommended operating conditions.
Symbol Parameter Condition Min. Typ. Max. Units
IIL, IIH1, 3, 4 Input or I/O Leakage 0V < VIN < VCCIO + 0.2 V — — +/–10 µA
C1I/O Capacitance2VCCIO = 3.3 V, 2.5 V, 1.8 V
VCC = Typ., VIO = 0 to VCCIO + 0.2 V —6—pf
C2Global Input Buffer
Capacitance2
VCCIO = 3.3 V, 2.5 V, 1.8 V
VCC = Typ., VIO = 0 to VCCIO + 0.2 V —6—pf
VHYST Input Hysteresis VCCIO = 1.8 V, 2.5 V, 3.3 V — 200 — mV
IPU Internal PIO Pull-up
Current
VCCIO = 1.8 V, 0=<VIN<=0.65 VCCIO –3—–31 µA
VCCIO = 2.5 V, 0=<VIN<=0.65 VCCIO –8—–72 µA
VCCIO = 3.3 V, 0=<VIN<=0.65 VCCIO –11 — –128 µA
1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured
with the output driver active. Internal pull-up resistors are disabled.
2. TJ 25 °C, f = 1.0 MHz.
3. Please refer to VIL and VIH in the sysIO Single-Ended DC Electrical Characteristics table of this document.
4. Some products are clamped to a diode when VIN is larger than VCCIO.