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Power Schottky Rectifier
Features
International standard package
Very low VF
Extremely low switching losses
Low IRM-values
Epoxy meets UL 94V-0
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Dimensions see outlines.pdf
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
AC
CA
TO-220 AC
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAV TC = 155°C; rectangular, d = 0.5 25 A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 400 A
EAS IAS = 18 A; L = 180 µH; TVJ = 25°C; non repetitive 46 mJ
IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive 1.8 A
(dv/dt)cr 1000 V/ms
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
Ptot TC = 25°C 135 W
Mdmounting torque 0.4...0.6 Nm
Weight typical 2 g
IFAV = 25 A
VRRM = 45 V
VF= 0.59 V
232
DSS 25-0045A
VRSM VRRM Type
V V
45 45 DSS 25-0045A
Symbol Conditions Characteristic Values
typ. max.
IR TVJ = 25°C VR= VRRM 1mA
TVJ = 125°C VR= VRRM 10 mA
VFIF = 25 A; TVJ = 125°C 0.59 V
IF = 25 A; TVJ = 25°C 0.69 V
IF = 50 A; TVJ = 125°C 0.73 V
RthJC 1.1 K/W
RthCH 0.5 K/W
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© 2002 IXYS All rights reserved
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0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
0 1020304050
0.001
0.01
0.1
1
10
100
51525350 102030
0
5
10
15
20
25
0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
04080120160
0
5
10
15
20
25
30
35
40
IF(AV)
TC
°CIF(AV)
ts
K/W
10 100 1000 10000
100
1000
10000
IFSM
tP
A
0 10203040
100
1000
10000
CT
IR
IF
A
VFVRVR
V
pF
V
mA
A
P(AV)
W
ZthJC
V
Single Pulse
(Th e rm a l Resist an c e )
DSS 25-0045A
A
µs
0.08
TVJ=175°C
150°C
125°C
100°C
50°C
25°C
TVJ =
175°C
150°C
125°C
25°C
TVJ= 2 5°C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
75°C
D=0.5
0.33
0.25
0.17
DC
DSS 25-0045A
232
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
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