IRFP460A - Fairchild Semiconductor

January 2002

IRFP460A Rev. B January 2002

IRFP460A

20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET

Applications

• Switch Mode Power Supplies (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

Features

• Low Gate Charge Q

g

results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dv/dt

Ruggedness

• Improved r

DS(ON)

• Reduced Miller Capacitance

Absolute Maximum Ratings

T

A

= 25

o

C unless otherwise noted

Thermal Characteristics

Symbol Parameter Ratings Units

V

DSS

Drain to Source Voltage 500 V

V

GS

Gate to Source Voltage

±

30 V

I

D

Drain Current

20 A

Continuous (T

C

= 25

o

C, V

GS

= 10V)

Continuous (T

C

= 100

o

C, V

GS

= 10V) 13 A

Pulsed

1

80 A

P

D

Power dissipation

Derate above 25

o

C

280

2.2

W

W/

o

C

T

J

, T

STG

Operating and Storage Temperature -55 to 150

o

C

Soldering Temperature for 10 seconds 300 (1.6mm from case)

o

C

Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)

R

θ

JC

Thermal Resistance Junction to Case 0.45

o

C/W

R

θ

CS

Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 TYP

o

C/W

R

θ

JA

Thermal Resistance Junction to Ambient 40

o

C/W

D

G

S

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

JEDEC TO-247

Package Symbol

IRFP460A

Package Marking and Ordering Information

Electrical Characteristics

T

J

= 25°C (unless otherwise noted)

Statics

Dynamics

Avalanche Characteristics

Drain-Source Diode Characteristics

Notes:

1: Repetitive rating; pulse width limited by maximum junction temperature

2: V

DD

= 50V, Starting T

J

= 25˚C, L = 7.0mH, R

G

= 25

Ω

, I

AS

= 14A

3: I

SD

</= 14A, di/dt </= 130A/µs, V

DD

</= V

(BR)DSS

, T

J

</= 150˚C

4: Pulse width </= 300µs; duty cycle </= 2%

Device Marking Device Package Reel Size Tape Width Quantity

IRFP460A IRFP460A TO-247 - - -

Symbol Parameter Test Conditions Min Typ Max Units

B

VDSS

Drain to Source Breakdown Voltage I

D

= 250

µ

A, V

GS

= 0V 500 - - V

∆

B

VDSS

/

∆

T

J

Breakdown Voltage Temp. Coefﬁcient V/˚C Reference to 25

o

C,

ID = 1mA - 0.61 -

r

DS(ON)

Drin to Source On-Resistance V

GS

= 10V, I

D

= 12A - 0.17 0.22

Ω

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= 250µA 2.0 3.3 4.0 V

I

DSS

Zero Gate Voltage Drain Current V

DS

= 25V T

C

=25

o

C- - 25

µ

A

V

GS

= 0V T

C

= 150

o

C - - 250

I

GSS

Gate to Source Leakage Current V

GS

=

±

20V - -

±

100 nA

g

fs

Forward Transconductance V

DS

= 50V, I

D

= 12A 11 - - S

Q

g(TOT)

Total Gate Charge V

GS

= 10V,

V

DS

= 400V,

I

D

= 20A

-5670nC

Q

gs

Gate to Source Gate Charge - 13 18 nC

Q

gd

Gate to Drain “Miller” Charge - 17 22 nC

t

d(ON)

Turn-On Delay Time V

DD

= 250V,

I

D

= 20A

R

G

= 4.3

Ω

,

R

D

= 13

Ω

-13-ns

t

r

Rise Time - 8 - ns

t

d(OFF)

Turn-Off Delay Time - 41 - ns

t

f

Fall Time - 6 - ns

C

ISS

Input Capacitance V

DS

= 25V, V

GS

= 0V,

f = 1MHz

- 3520 - pF

C

OSS

Output Capacitance - 410 - pF

C

RSS

Reverse Transfer Capacitance - 21 - pF

E

AS

Single Pulse Avalanche Energy

2

960 - - mJ

I

AR

Avalanche Current - - 20 A

E

AR

Repetitive Avalanche Energy

1

28 - - mJ

I

S

Continuous Source Current

(Body Diode)

MOSFET symbol

showing the

integral reverse

p-n junction diode.

- - 20 A

I

SM

Pulsed Source Current

1

(Body Diode) - - 80 A

V

SD

Source to Drain Diode Voltage I

SD

= 20A - 0.86 1.8 V

t

rr

Reverse Recovery Time I

SD

= 20A, dI

SD

/dt = 100A/

µ

s - 560 710 ns

Q

RR

Reverse Recovered Charge I

SD

= 20A, dI

SD

/dt = 100A/

µ

s - 8.0 11

µ

C

D

G

S

IRFP460A

Typical Characteristics

Figure 1. Output Characteristics Figure 2. Output Characteristics

Figure 3. Transfer Characteristics Figure 4. Drain To Source On Resistance vs

Junction Temperatrue

Figure 5. Capacitance vs Drain To Source Voltage Figure 6. Gate Charge Waveforms For Constant

Gate Current

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN TO SOURCE CURRENT (A)

1.0 10 100

1.0

10

100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

V

GS

DESCENDING

10V

7V

6V

5.5V

5V

4.5V

TJ = 25oC

4.5V

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN TO SOURCE CURRENT (A)

1.0 10 100

1.0

10

100 TJ = 150oC

V

GS

DESCENDING

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

4.5V

10V

7V

6V

5.5V

5V

4.5V

20

40

60

0246 10

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

8

0

30

50

70

10

TJ = 150oC

TJ = 25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = 50V

0

0.2

0.4

0.5

-50 050 100 150

rDS(ON), DRAIN TO SOURCE ON RESISTANCE (ohms)

TJ, JUNCTION TEMPERATURE (oC)

0.1

-25 25 75 125

0.3

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = 10V, ID = 20A

0

6000

010 100

8000

C, CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

2000

4000

20 30 40 50 60 70 80 90

VGS = 0V, f = 1MHz

CISS

COSS

CRSS

0

6

8

12

030 40 50 60

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

ID = 20A

10

70

250V

400V

100V

2010

4

2

IRFP460A

Figure 7. Body Diode Forward Voltage vs Body

Diode Current

Figure 8. Maximum Safe Operating Area

Figure 9. Maximum Drain Current vs Case Temperature

Figure 10. Normalized Transient Thermal Impedance, Junction to Case

Typical Characteristics (Continued)

0.1

100

0 0.2 0.4 0.6 1.0

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

0.8 1.2 1.4 1.6

TJ = 25oC

TJ = 150oC

10

1

0.1

1.0

10

100

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

1.0 10 100 1000

1000

OPERATION IN THIS AREA

LIMITED BY RDS(ON)

TC = 25oC

1ms

DC

10ms

100µs

0

4

12

20

25 50 75 125 150

TC, CASE TEMPERATURE (˚C)

ID, DRAIN CURRENT (A)

100

8

16

t

1

, RECTANGULAR PULSE DURATION (s)

Z

θJC

, NORMALIZED THERMAL RESPONSE

100

10-5 10-3 10-2 10-1 100101

10-4

t1

t2

PD

DUTY FACTOR, D = t1 / t2

PEAK TJ = (PD X ZθJC X RθJC) + TC

SINGLE PULSE

0.20

0.50

0.10

0.05

0.02

0.01

10-1

10-2

IRFP460A

Test Circuits and Waveforms

Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms

Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms

Figure 15. Switching Time Test Circuit Figure 16. Switching Time Waveform

tP

VGS

0.01Ω

L

IAS

+

-

VDS

VDD

RG

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

0V

VDD

VDS

BVDSS

tP

IAS

tAV

0

RL

VGS +

-

VDS

VDD

DUT

Ig(REF)

VDD

Qg(TH)

VGS = 1V

Qg(5)

VGS = 5V

Qg(TOT)

VGS = 10V

VDS

VGS

Ig(REF)

0

Qgs Qgd

VGS

RL

RGS

DUT

+

-

VDD

VDS

VGS

tON

td(ON)

tr

90%

10%

VDS 90%

10%

tf

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerTrench

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

FAST

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

Rev. H4



ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E2CMOSTM

EnSignaTM

FACT™

FACT Quiet Series™

SMART START™

STAR*POWER™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

TruTranslation™

UHC™

UltraFET



STAR*POWER is used under license

VCX™