Am9101 Family Am9101 Family 256 x 4 Static RAM DISTINCTIVE CHARACTERISTICS @ Low operating power 125 mW typ.; 290 mW maximum standard power 100 mW typ.; 175 mW maximum low power @ Logic voitage levels identical to TTL High output drive two full TTL loads @ High noise immunity full 400 mV @ Two chip enable inputs @ Output disable control GENERAL DESCRIPTION The Am9101/Am91L01 series of devices are high-perfor- mance, low-power, 1024-bit, Static, Read/Write Random Access Memories. They offer a wide range of access times including versions as fast as 200 ns. Each memory is implemented as 256 words by 4 bits per word. This organization permits efficient design of smail memory systems and allows finer resolution of incremental memory depth. These memories may be operated in a DC standby mode for reductions of as much as 84% of the normal power dissipation. Data can be retained with a power supply as low as 1.5 volts. The low power Am91L01 series offer reduced power dissipation. during normal operating condi- tions and even lower dissipation in the standby mode. The Chip Enable input control signals act as high order address lines and they control the write amplifier and the output buffers. The Output Disable signal provides indepen- dent control over the output state of enabled chips. These devices are fully static and no refresh operations, sense amplifiers or clocks are required. Input and output signal levels are identical to TTL specifications, providing simplified interfacing and high noise immunity. The outputs will drive two full TTL loads for increased fan-out and better bus interfacing capability. BLOCK DIAGRAM Ao =4 = 88 32x8 32X8 32X8 32x8 Qa > STORAGE | STORAGE | STORAGE | STORAGE Sn ARRAY ARRAY ARRAY ARRAY Ag e zo 2 a< Na see7 G u GUL COLUMN DECODER/INPUT CONTROL/ a CEI Ag OUTPUT BUFFERS/SELECT LOGIC/ DISABLE LOGIC l~ CE2 Ag ________ - 00 00, of | ont ool ou! 00,4 out BD000100 Publication # Rev. Amendment 03255 D 70 4-164 Issue Date: May 1986CONNECTION DIAGRAM Top View aoonessa[]1 2 Mee (+8) aponess 2[] 2 21[_] aooness 4 aporess 1[7] 3 20|_] WRITE ENAGL aopress of 10|_] CHIP ENABLE t aponess 5[_] 5 18 [_Jourput oisage aporess6[_] 6 17 [7] coup ewaace 2 avoress 7["] 7 16 [joara ours (GND) Veg [_] 8 18[_JoaTa is oaTaini[_] 9 14 Joata ours oata our i[_] 10 13 Joata in param 2] 12 ee CD000151 Note: Pin 1 is marked for orientation. METALLIZATION AND PAD LAYOUT ADDRESS3 1 Vee (V0 ADDRESS 2. 2 -, ! 21 ADDRESS 4 ADDRESS 1 3 _ 20 WRITE ENABLE 19 CHIPENABLE1 ADDRESS O 4 8 OUTPUT DISABLE 17 CHIP ENABLE 2 AQORESSS 6 ADORESS6 6 ADDRESS? 7 i | a fi 16 DATA QUTS (GNOI Ves 8 ma 15 DATAING DaTANT 9 i 14 DATAQUT3 DATA OUT 110 | 13 QATAINS DATA IN 2 49 1? OATAQUT2 Die Size 0.132 x 0.131 4-165ORDERING INFORMATION (Cont'd.) AMD standard products are available in several Combination) is formed by a combination of: A. moog AM9101 [> Standard Products packages and operating ranges. The order number (Valid Device Number . Speed Option (if applicable) . Package Type . Temperature Range . Optional Processing & B | OPTIONAL PROCESSING B = Burn-in D. TEMPERATURE RANGE C = Commercial (0 to + 70C) - PACKAGE TYPE P = 22-Pin Plastic DIP (PD 022) D = 22-Pin Ceramic DIP (CD 022) Am9101 256 x 4 Static RAM . SPEED OPTION A= 500 ns B = 400 ns C = 300 ns D= 250 ns A. DEVICE NUMBER/DESCRIPTION Am81L01 = Low-Power Version Valid Combinations Valid Combinations AM9101A AM9101B AM9101C AM9101D AM91LO1A AM91L01B Am91L01C Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations, to check on newly released combinations, and to obtain additional data on AMD's standard military grade products. 4-166ORDERING INFORMATION CPL Products AMD products for Aerospace and Defense applications are available in several packages and operating ranges. APL (Approved Products List) products are fully compliant with MIL-STD-883C requirements. CPL (Controlled Products List) products are processed in accordance with MIL-STD-883C, but are inherently non-compliant because of package, solderability, or surface treatment exceptions to those specifications. The order number (Valid Combination) for CPL products is formed by a combination of: A. Device Number B. Speed Option (if applicable) C. Package Type D. Temperature Range E. CPL Status 101 & |, CPL STATUS C=CPL Certified D. TEMPERATURE RANGE M = Military (-55 to + 125C) C. PACKAGE TYPE /D = 22-Pin Ceramic DIP (CD 022) B. SPEED OPTION A= 500 ns B= 400 ns G = 300 ns A. DEVICE NUMBER/DESCRIPTION Am9101 256 x 4 Static RAM Am91L01 = Low-Power Version Valid Combinations Valid Combinations AM9101A Valid Combinations list configurations planned to be AM9101B supported in volume for this device. Consult the local AMD AM9101C /DMC sales office to confirm availability of specific valid AMQILO1A combinations or to check for newly released valid AM391L01B combinations. AM91L01C 4-167ORDERING INFORMATION Commodity Products AMD commodity products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of: A. Temperature Range B. Package Type Cc. Device Number D. Speed Option 2101 A | . SPEED OPTION Blank = 1000 ns -1=500 ns A-4= 400 ns A= 300 ns A-2 = 250 ns {> C. DEVICE NUMBER/DESCRIPTION 2101 256 x 4 Static RAM B. PACKAGE TYPE P = 22-Pin Plastic DIP (PD 022) C = 22-Pin Ceramic DIP (CD 022) A. TEMPERATURE RANGE Blank = Commercial (0 to + 70C) Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD P,C | 2101 oh} sales office to confirm availability of specific valid : combinations, to check on newly released valid combinations, and to obtain additional data on AMD's standard military grade products. Valid Combinations 4-168PIN DESCRIPTION Ao~A7 Addresses (Input) CET, CE2 Chip Enable Signals (Input) The 8-bit field presented at the address inputs selects one Read and Write cycles can be executed only when CET is of the 256 memory locations to be read from or written LOW and CE2 is HIGH. into via the Data Input/Output lines. Dilyj-Dlq Data In Lines (input) The inputs whose states represent the data to be stored in WE Write Enable (input, Active LOW) Data is written into the memory if WE is LOW and read from the memory if WE is HIGH. memory. DO,-DO,g Data In Lines (Output) OD Output Disable (Input) The outputs whose states represent the data to be stored in Read cycles can be executed only when OD is LOW. memory. FUNCTIONAL DESCRIPTION Applications Refer to Figure 1 for Memory System information. DATA IN (12 BITS} ADDRESS ol oI oF to-7) 8] al Am91L01 BES Am@iLO1 READ/ WRITE CONTROL AmBILO1 26 X4 oo co po OD ADORESS B or Py A WE amaiLot CEI 6x4 Am91L01 Am@1L0t 256 x4 Fi US6XA ce? cE ADDRESS9. ob 00 op oO oo Ob MEMORY SYSTEM DISABLE STANDBY) or OF A We AmS1L01 CEi m6 x4 amgitot CE] 256K 4 AmgiL01 Ei 266 X4 cEZ cE2 op 600 oD DO ob oa DATA OUT DATA OUT 4 apout 4 OUTPUT STROBE Am28LS07 IF REGISTER Am251507 BIT REGISTER] 6-61 6 6 AFO00090 Figure 1. Memory System 768 Words by 12 Bits Per Word 4-169ABSOLUTE MAXIMUM RATINGS (Note 1) Storage Temperature .......... cc ceeeeeeeeeee -65 to + 150C Ambient Temperature with Power Applied ..........0....0.0 cee -55 to +125C Supply Voltage ............ccceeeeeeeeee neers -0.5 V to +7.0 V DC Voltage Applied to Outputs............ -0.5 V to +70 V DC Layout Voltage... 0.5 V to +7.0 V Power Description .. 1.0 W DC Output Current .......... ccc cccceeeeeeeseeseeeeeee 20 mA Stresses above those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. OPERATING RANGES (Note 2) Commercial (C) Devices Temperature 2.2.0... cece eee eee eeeeeeteeeneeeeee 0 to +70C Supply Voltage ..............:. cee +4.75 V to +5.25 V Military (M) Devices* TOMperature ..........ccceeeeeeeesesseeeeeenees -55 to +125C Supply Voltage ............c eee +45 V to +55 V Operating ranges define those limits between which the functionality of the device is guaranteed. *Military product 100% tested at To = +25C, + 125C, and -55C. DC CHARACTERISTICS over operating range unless otherwise specified* Am9101/ Am91L01 Am2101 Parameter Parameter Symbol Description Test Conditions Min. | Max. | Min. | Max. | Units Vou Output HIGH Voltage Voc = Min. oH = ~~ = : 24 ei v j lol = 3.2 mA 04 VoL Output LOW Voltage Voc = Min. lo = 2.0 mA 045 v Vi Input HIGH Voltage 20 | Vcc | 20 | Voc v ViL Input LOW Voltage -0.5 0.8 ~0.5 | 0.65 Vv lo input Load Current Voc = Max. 0 < Vin <Voco 10 10 pA C devices 5.0 15 Vo = Voc - Lo Output Leakage Current VGE = Vin M devices 10 BA Vo = 0.4 V -10 -50 Am9101A/B 50 Am9101/C/D/E 55 Ta = 25C (Note 3) Am91L01A/B 31 Am91L01C/D/E 34 Am2101 60 Am9101A/B 55 Data Out Open Ta = 0C Am9101C/D/E 60 loc, Power Supply Center Voc = Max. (C devices Am91L01A/B 33 mA Vin = Voc only) Am91L01G/D/E 36 Am2101 70 Am9101A/B 60 Ta = -55C Am9101C/D/E 65 (M devices Am91L01A/B 37 only) Am91L01G/D/E 40 Am2101 CIN Input Capacitance Ta = 25C, f= 1 MHz, Vin =0 V (Note 3) 9 9 Co Output Capacitance Ta = 28C, f= 1 MHz, Vo =0 V (Note 3) 12 12 pF Notes: 1. Absolute maximum ratings are intended for user guidelines and are not tested. . For test and correlation purposes, ambient temperature is defined as the stabilized case temperature. 1 2. 3. Guaranteed by characterization data. Data will be updated upon any process or design change which affects this parameter. 4 . Test conditions assume signal transition times of 10 ns or less. Output load equals 1 TTL gate + 100 pF. Input signal timing reference level = 1.5 V, with input pulse levels of 0 to 3.0 V. Data output timing reference leveis = 0.8 and 2.0 V. 5. Both TE1 and CE2 must be true to enable the chip. *See the last page of this spec for Group A Subgroup Testing information. 4-170STANDBY OPERATING CONDITIONS over temperature range unless otherwise specified Parameter Parameter Symbol Description Test Conditions Min. | Typ. | Max. | Units Vpp Voc in Standby Mode 1.5 Am91L01 1 25 Vpo= 15. VF am9101 13 31 Ta = OC mA All Inputs = Vpp Am91L01 13 31 Vep = 2.0 V I icc in Standby Mode Ame1or a PD ce AmS1L01 4 28 Veo = 1.8 V Am9101 13 34 Ta = -55C mA All Inputs = Vep Am91L01 13 34 Vpp = 2.0 V PO Amgi01 17 6 dv/dt Rate of Change of Voc 1.0 Vis tr Standby Recovery Time tac ns top Chip Deselect Time 0 ns Voces CE Bias in Standby Vpp Volts Power-Down Standby Operation The Am9101/AM91L01 Family is designed to maintain stor- age in a standby mode. The standby mode is entered by lowering Vcc to around 1.5 - 2.0 volts (see table and graph). When the voltage to the device is reduced, the storage cells are isolated from the data lines, so their contents will not change. The standby mode may be used by a battery operated backup power supply system, or, in a large system, memory pages not being accessed can be placed in standby to save power. A standby recovery time must elapse following restora- tion of normal power before the memory may be accessed. To ensure that the output of the device is in a high-impedance OFF state during standby, the chip select should be held at Vi} or Voges during the entire standby cycle. 4-171TYPICAL DC AND AC CHARACTERISTICS hw tcp. DESELECT STANDBY MODE cHaP Access Time Versus Voc Normalized to Vcc = + 5.0 Volts | Roe RECOVERY Typical Power Supply Current Versus Voitage Typical Output Current Versus Voitage Ty = 26C Voc * 478 INPUTS = 5.0 V Tas ase Am9112 4 1 1 x i 5 : ' 3 3 2 ad > > READ OR 4 waITE o 1 2 3 4 6& 6 0 1 2 a 4 6 Voc - VOLTS Vout - VOLTS WF000300 ce ouT OPO00460 OP001060 Typical Power Supply Current Versus Ambient Temperature 1.06 T Ta = 70C bd Vog =| Max. | nore 2 1.0 LL 24 < f 2 . ' 096 { 20 z > 2 8 is 16 0.90 4 12 086 40 4s 5.0 55 66 Go 23 50 75 Veco ~ VOLTS Ta AMBIENT TEMPERATURE ~ C OP000100 OP001070 Typical ta Versus Ambient Temperature 300 Vor = Min. 250 200 pa 2 : : s je s 150 100 25 50 8 0 Ta | AMBIENT TEMPERATURE - C OP001040 Typical Vin Limits Versus Ambient Temperature 18 8 Ta ~ AMBIENT TEMPERATURE "C OP001030 Typical ta Versus C_ 100 200 300 4400 6500 600 Cy - oF OP001050 4-172SWITCHING CHARACTERISTICS over operating range unless otherwise specified (Note 4)* Am2101 Am2101-2 Am2101-1 Parameter Parameter No. Symbol Description Min. Max. Min. Max. Min. Max. Units 1 tac Read Cycie Time 1000 650 500 ns 2 ta Access Time 1000 650 500 ns 3 tco Chip Enable to Output ON Delay (Note 5) a00 400 350 ns 4 top Output Disable to Output ON Delay 700 350 300 ns 5 tou Previous Caan Data Valid with Respect to 0 0 0 ns 6 toFi Output Disable to Output OFF Delay (Note 3) 0 200 0 160 0 150 ns 7 tore Chip Enable to Output OFF Delay (Note 3) 0 200 0 150 0 150 ns 8 two Write Cycle Time 4000 650 500 ns 9 taw Address Set-up Time 150 150 100 ns 10 twe Write Puise Width 750 400 300 ns "1 tow Chip Enable Set-up Time (Note 5) 900 550 400 ns 12 twr Address Hold Time 50 50 50 ns 13 tow input Data Set-up Time 700 400 280 ns 14 toH Input Data Hold Time 100 100 100 ns Am9101A Am9101B Am9101C Am91L01A Am91L01B Am91L01c Am9101D Parameter Parameter No. Symbol Description Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Units 1 trac Read Cycle Time 500 400 300 250 ns 2 ta Access Time 500 400 300 250 ns 3 tco Chip Enable to Output ON Delay (Note 5) 200 175 150 125 ns 4 top Output Disable to Output ON Delay 175 150 125 100 ns 5 tox Rerous Chany ata Valid with Respect to 40 40 40 30 ns 6 tpoF1 Output Disable to Output OFF Delay 5.0 125 5.0 100 5.0 100 .0 75 ns 7 tor2 Chip Enable to Output OFF Delay 10 125 10 125 10 100 10 100 ns 8 two Write Cycie Time 500 400 300 250 ns 9 taw Address Set-up Time 20 20 20 20 ns 10 twp Write Pulse Width 225 200 175 150 ns 1 tow Chip Enable Set-up Time (Note 5) 175 160 125 100 ns 12 twrR Address Hold Time 0 0 0 Qo ns 13 tpw Input Data Set-up Time 150 125 100 85 ns 14 tbH Input Data Hold Time 15 15 16 16 ns See notes following DC Characteristics table. *See the last page of this spec for Group A Subgroup Testing information. 4-173SWITCHING WAVEFORMS READ CYCLE WRITE CYCLE i tac } we ADORESS CHIP ENAGLE 1 \ / \ / CHIP ENABLE 2 ew__e+] | | | [saw yp ___be wae WRITE ENABLE y WRITE ENABLE } | \ 5 Oo r0F2 +| | | QUTPUT CISABLE fF Kf tor __- 00 ret'on DATA OUT - tg | [rt ron f DATA IN x DATA INPUT STABLE k WF000200 4-174GROUP A SUBGROUP TESTING DC CHARACTERISTICS Parameter Symbol Subgroups Vou 1,2,3 VoL 1, 2,3 VIH 1,2,3 Vit 1,2,3 I 1,2, 3 ILo 1,2,3 loc1 4,2,3 Vpp 1,2,3 lpp 1,2, 3 SWITCHING CHARACTERISTICS Parameter No. Symbol Subgroups 1 tac 7, 8, 9, 10, 11 2 ta 7, 8, 9, 10, 11 3 tco 7, 8, 9, 10, 11 4 top 7, 8, 9, 10, 11 5 tou 7, 8, 9, 10, 11 8 two 7, 8, 9, 10, 11 9 taw 7, 8, 9, 10, 11 10 twe 7, 8, 9, 10, 11 1 tow 7, 8, 9, 10, 11 12 twR 7, 8, 9, 10, 11 13 tow 7, 8, 9, 10, 11 14 toH 7, 8, 9, 10, 14 MILITARY BURN-IN Military burn-in is in accordance with the current revision of MIL-STD-883, Test Method 1015, Conditions A through E. Test conditions are selected at AMD's option. 4-175