SMALL SIGNAL REVERSE VOLTAGE - 75 Volts
SWITCHING DIODE FORWARD CURRENT - 0.15Amperes
FEATURES
● Silicon epitaxial planar diode
● High speed switching diode
● 500mW power dissipation
●Case: Mini-MELF glass case
●Polarity: Color band denotes cathode
●Weight : Approx.0.05 grams
Dimensions in inches and (millimeters)
UNIT
Reverse Vltage VRV
Peak Reverse Voltage VRM V
Average Forward Rectified Current
Half Wave Rectification with Resist .load
at Tamb=25℃ and f≧50HZ
Forward Surge Current at t<1s and TJ=25℃IFSM mA
Power Dissipation at Tamb=25℃Ptot mW
Junction Temperature TJ℃
Storage Temperature Range TSTG ℃
UNIT
Forward Voltage at IF=10mA VF V
Leakage Current
at VR=20V IRuA
at VR=75V
R
at VR=20V TJ=150℃
R
Capacitance at VF=VR=0V Ctot pF
Voltage Rise When Switching ON
Tested With 50mA Pulses
tp=0.1us.Rise Time<30ns.fp=5to 100HZ
Reverse Recovery Time From IF=10mA
VR=6V. RL=100Ω at IR=1mA
Thermal Resistance Junction to Ambient RθJA K/W
Rectification Effciency at 100MHZ VRF=2V ηV﹣
v
ns
mAIO
Vfr
trr
﹣
-
500(1)
175
﹣65 to﹢175
LL4148
4
2.5
25
5
50
ELECTRICAL CHARACTERISTICS
NOTE:(1) Valid provided that electrodes are kept at ambient temperature .
MAX
1
﹣
﹣
LL4148
75
100
150
500
4
350(1)
TYP
﹣
﹣
﹣
﹣﹣
﹣
﹣
~ 416 ~
0.45
﹣
﹣
﹣
﹣
﹣
NOTE:(1)Valid provided that electrodes are kept at ambient temperature.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
﹣
MIN
-
DL - 35
.055(1.4)
.063(1.6)
.020(0.5)
.012(0.3).012(0.3)
.020(0.5)
.146(3.7)
.130(3.3)