BCW66 NPN Silicon AF Transistors * For general AF applications 2 3 * High current gain 1 * Low collector-emitter saturation voltage * Complementary type: BCW68 (PNP) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B 2=E 3=C SOT23 BCW66KG* EGs 1=B 2=E 3=C SOT23 BCW66H EHs 1=B 2=E 3=C SOT23 BCW66KH* EHs 1=B 2=E 3=C SOT23 * Shrinked chip version Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 45 Collector-base voltage VCBO 75 Emitter-base voltage VEBO 5 Collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 800 1 330 TS 115 C, BCW66K 500 Tj Storage temperature Tstg 1Pb-containing V mA A mA mW TS 79 C, BCW66 Junction temperature Unit 150 C -65 ... 150 package may be available upon special request 1 2007-04-20 BCW66 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit K/W 215 BCW66 70 BCW66K Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 45 V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 75 - - V(BR)EBO 5 - - IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A I CBO VCB = 45 V, IE = 0 - - 0.02 VCB = 45 V, IE = 0 , TA = 150 C - - 20 - - 20 Emitter-base cutoff current I EBO nA VEB = 5 V, IC = 0 DC current gain2) - h FE IC = 100 A - 10 mA, VCE = 1 V, hFE-grp.F 75 - - IC = 100 A - 10 mA, VCE = 1 V, hFE-grp.G 110 - - IC = 100 A - 10 mA, VCE = 1 V, hFE-grp.H 180 - - IC = 100 mA, V CE = 1 V, hFE-grp.F 100 160 250 IC = 100 mA, V CE = 1 V, hFE-grp.G 160 250 400 IC = 100 mA, V CE = 1 V, hFE-grp.H 250 350 630 IC = 500 mA, V CE = 1 V, hFE-grp.F, G, H 40 - - Collector-emitter saturation voltage2) V VCEsat IC = 100 mA, IB = 10 mA - - 0.3 IC = 500 mA, IB = 50 mA - - 0.45 IC = 100 mA, IB = 10 mA - - 1.25 IC = 500 mA, IB = 50 mA - - 1.25 Base emitter saturation voltage2) 1For VBEsat calculation of RthJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300s; D < 2% 2 2007-04-20 BCW66 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. - 170 - AC Characteristics Transition frequency fT MHz IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance pF Ccb VCB = 10 V, f = 1 MHz, BCW66 - 6 - VCB = 10 V, f = 1 MHz, BCW66K - 3 - VEB = 0.5 V, f = 1 MHz, BCW66 - 60 - VEB = 0.5 V, f = 1 MHz, BCW66K - 40 - Emitter-base capacitance Ceb 3 2007-04-20 BCW66 DC current gain hFE = (IC) VCE = 1 V 10 3 Collector-emitter saturation voltage IC = (VCEsat), hFE = 10 BCW 65/66 5 EHP00396 BCW 65/66 10 3 EHP00395 mA 100 C 150 C 25 C -50 C C h FE 10 2 25 C 10 2 -50 C 5 5 10 1 5 10 1 0 10 5 5 10 0 10 -1 5 10 0 5 10 1 5 10 2 10 -1 mA 10 3 0 200 400 600 mV 800 C VCE sat Collector cutoff current ICBO = (TA) VCB = V CEmax Base-emitter saturation voltage IC = (V BEsat), hFE = 10 10 3 BCW 65/66 EHP00394 10 5 nA mA 150 C 25 C -50 C C 2 10 CB0 BCW 65/66 EHP00393 10 4 5 5 10 3 10 max 5 1 5 10 2 5 typ 0 10 10 5 1 5 10 -1 0 1 2 3 V 10 0 4 0 50 100 C 150 TA VBE sat 4 2007-04-20 BCW66 Transition frequency fT = (IC) VCE = 5 V 10 3 BCW 65/66 Collector-base capacitance Ccb = (V CB) Emitter-base capacitance Ceb = (VEB) BCW66: - - - , BCW66K: ____ EHP00391 75 pF MHz fT 5 V CB/V EB 60 CEB: BCW66 CEB: BCW66K CCB: BCW66 CCB: BCW66K 55 50 45 40 10 2 35 30 5 25 20 15 10 5 10 1 10 0 10 1 10 2 mA 0 0 10 3 2 4 6 8 10 12 14 V 16 C Total power dissipation Ptot = (TS) BCW66: - - - , BCW66K: ____ Permissible Pulse Load Ptotmax/P totDC = (tp) 10 3 550 mW BCW 65/66 Ptot max 5 Ptot DC Ptot EHP00392 tp D= T 450 400 20 CCB/C EB tp T BCW66K BCW66 10 2 350 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 300 250 200 10 1 150 5 100 50 0 0 15 30 45 60 75 90 105 120 C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2007-04-20 Package SOT23 BCW66 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2007-04-20 BCW66 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-20