V
RRM
= 50 V - 600 V
I
F
= 40 A
Features
• High Surge Capability DO-5 Package
• Types up to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol
1N1183A(R) 1N1184A(R) 1N1188A(R) 1N1190A(R)
Unit
Repetitive peak reverse
2. Reverse polarity (R): Stud is anode.
Conditions
1N1183A thru 1N1190AR
1N1186A(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
Diode
voltage
RRM
RMS reverse voltage V
RMS
35 70 280 420 V
DC blocking voltage V
DC
50 100 400 600 V
Continuous forward current I
F
40 40 40 40 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbol
1N1183A(R) 1N1184A(R) 1N1188A(R) 1N1190A(R)
Unit
Diode forward voltage 1.1 1.1 1.1 1.1
10 10 10 10 μA
15 15 15 15 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
1.25 1.25 1.25 1.25 °C/W
10
1N1186A(R)
1.25
V
R
= 50 V, T
j
= 140 °C
1.1
V
R
= 50 V, T
j
= 25 °C
I
F
= 40 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
140
800 800
-55 to 150
40
200
A800
Reverse current I
R
V
F
800 800
-55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
V
15
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1