VISHAY
MBR0520L
Document Number 85675
Rev. 1.2, 22-Apr-04
Vishay Semiconductors
www.vishay.com
1
17431
Low VF Small Surface Mount Schottky Rectifier
Features
For surface mounted applications
Low profile package
Ideal for automated placement
Low power loss, high efficiency
High temperature soldering:
250 °C/10 seconds at terminals
Mechanical Data
Case: SOD-123 plastic case
Polarity: Band denotes cathode end
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Ordering code Marking Remarks
MBR0520L MBR0520L-GS18 or MBR0520L-GS08 B2 Tape and Reel
Parameter Test condition Symbol Value Unit
Maximum repetitive peak
reverse voltage
VRRM 20 V
Working peak reverse voltage VRWM 20 V
Maximum DC blocking voltage VR20 V
Max. average forward rectified
current at rated VR
Tamb = 115 °C IFAV 0.5 A
Peak forward surge current 8.3 ms single half sine-wave
TL = 25 °C
IFSM 5.5 A
Voltage rate of change at rated
VR
Tj = 25 °C dv/dt 1,000 V/µs
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Document Number 85675
Rev. 1.2, 22-Apr-04
VISHAY
MBR0520L
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
1) Pulse test: 300 ms pulse width, 1 % duty cycle
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Value Unit
Typical thermal resistance
junction to lead
RthJL 118 °C/W
Typical thermal resistance
junction to ambient
RthJA 206 °C/W
Operating junction and storage
temperature
Tj, Tstg - 55 to + 125 °C
Parameter Test condition Symbol Min Ty p. Max Unit
Maximum instantaneous
forward voltage1)
IF = 0.1 A, Tj = 25 °C VF0.300 V
IF = 0.1 A, Tj = 100 °C VF0.220 V
IF = 0.5 A, Tj = 25 °C VF0.385 V
IF = 0.5 A, Tj = 100 °C VF0.330 V
Maximum DC reverse current VR = 10 V, Tj = 25 °C IR75 µA
VR = 10 V, Tj = 100 °C IR5mA
VR = 20 V, Tj = 25 °C IR250 µA
VR = 20 V, Tj = 100 °C IR8mA
Fig. 1 Derating Curve Output Rectified Current
0
0.6
0.8
50 60 70 80 90 100 110 120 130 140 150
Average Current (A)
Case Temperature
0.4
0.2
Resistive or
Inductive Load
17908
(°C)
Fig. 2 Maximum Non-Repetitive Peak Forward Surge Current
0
1
2
3
4
5
6
1 10010
Peak Forw ard Surge Current (A)
Number of Cycles at 60 Hz
8.3 Single Half Sine-Wave
(JEDEC Method) at rated T
L
17909
VISHAY
MBR0520L
Document Number 85675
Rev. 1.2, 22-Apr-04
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Fig. 3 Typical Instantaneous Forward Characteristics
0 5 0 100 150 200 250 300 350 400 450 500
Forward Voltage (mV)
1
10
100
1000
F orward Current (mA)
T
J
= 100 C
TJ=25
°
CTJ=50-
°
C
°
17910
Fig. 4 Typical Reverse Characteristics
0 2 4 6 8 101214161820
Reverse Current (µA)
Reverse Voltage (V)
1
1000
100
10
10000
T
J
=100°C
T
J
=25°C
17911
Cathode Band
17432
0.55 (0.022)
1.70 (0.067)
1.40 (0.055)
3.85 (0.152)
3.55 (0.140)
2.85 (0.112)
2.55 (0.100)
0.1 (0.004) max.
1.35 (0.053) max.
0.25 (0.010) min.
0.15 (0.006) max.
ISO Method A
1.40 (0.055)2.40 (0.094)
1.40 (0.055)
Mounting Pad Layout
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Document Number 85675
Rev. 1.2, 22-Apr-04
VISHAY
MBR0520L
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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