© Semiconductor Components Industries, LLC, 2017
December, 2018 − Rev. 1
1Publication Order Number:
NSVS50030SB3/D
NSVS50030SB3,
NSVS50031SB3
Bipolar Transistor (-)50 V,
(-)3 A, Low VCE(sat),
(PNP)NPN Single
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching.
Suitable for motor driver, relay driver, DC−DC converter of
automotive applications. AEC−Q101qualified and PPAP capable.
Features
•Large Current Capacitance
•Low Collector to Emitter Saturation Voltage
•High−Speed Switching
•High Allowable Power Dissipation
•AEC−Q101Qualified and PPAP Capable
•Pb−Free, Halogen Free and RoHS Compliance
•Ultra Small Package Facilitates Miniaturization in End Products
(Mounting Height: 0.9 mm)
Typical Applications
•DC / DC Converter
•Relay Drivers, Lamp Drivers, Motor Drivers
•Flash
Specifications
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Parameter Symbol Value Unit
Collector to Base Voltage VCBO (−50) 100 V
Collector to Emitter Voltage VCES (−50) 100 V
Collector to Emitter Voltage VCEO (−)50 V
Emitter to Base Voltage VEBO (−)6 V
Collector Current IC(−)3 A
Collector Current (Pulse) ICP (−)6 A
Base Current IB(−)600 mA
Collector Dissipation (Note 1) PC1.1 W
Junction Temperature Tj 175 _C
Storage Temperature Tstg −55 to +175 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on ceramic substrate. (600 mm2 x 0.8 mm)
CPH3
CASE 318BA
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
MARKING DIAGRAMS
ELECTRICAL CONNECTION
3
2
1
3
2
1
NSVS50030SB3 NSVS50031SB3
3
2
1
XXXM
XXX = HAE: NSVS50030SB3
= HCE: NSVS50031SB3
M = Single Digit Date Code
NSVS50030SB3, NSVS50031SB3
www.onsemi.com
2
ORDERING INFORMATION
Device Marking Package Shipping (Qty / Packing) †
NSVS50030SB3T1G HAE CPH3
(Pb−Free / Halogen Free)
3,000/ Tape & Reel
NSVS50031SBST1G HCE
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter Symbol Conditions
Value
Unit
Min Typ Max
Collector Cutoff Current ICBO VCB = (−)40 V, IE = 0 A (−)1 μA
Emitter Cutoff Current IEBO VEB = (−)4 V, IC = 0 A (−)1 μA
DC Current Gain hFE VCE = (−)2 V,
IC = (−)100 mA
200 560
Gain−Bandwidth Product fTVCE = (−)10 V,
IC = (−)500 mA
(360) 380 MHz
Output Capacitance Cob VCB = (−)10 V,
f = 1 MHz
(24) 13 pF
Collector to Emitter Saturation Voltage VCE(sat) IC = (−)1 A,
IB = (−)50 mA
(−100) 80 (−200) 120 mV
IC = (−)2 A,
IB = (−)100 mA
(−185) 140 (−500) 210 mV
Base to Emitter Saturation Voltage VBE(sat) IC = (−)2 A,
IB = (−)100 mA
(−)0.88 (−)1.2 V
Collector to Base Breakdown Voltage V(BR)CBO IC = (−)10 mA, IE = 0 A (−50) 100 V
Collector to Emitter Breakdown Voltage V(BR)CES IC = (−)100 mA,
RBE = 0 W
(−50) 100 V
Collector to Emitter Breakdown Voltage V(BR)CEO IC = (−)1 mA, RBE = ∞(−)50 V
Emitter to Base Breakdown Voltage V(BR)EBO IE = (−)10 mA,
IC = 0 A
(−)6 V
Turn−On Time ton See Fig.1 (30) 35 ns
Storage Time tstg (230) 300 ns
Fall Time tf(15) 22 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Switching Time Test Circuit
++
50 W
INPUT OUTPUT
VR
RBRL
100 mF 470 mF
PW=20 msIB1
IB2
DC ≤1%
++
50 W
INPUT OUTPUT
VR
RBRL
PW=20 msIB1
IB2
DC ≤1%
NSVS50030SB3 NSVS50031SB3
10IB1 = −10IB2 = IC = 1 A
10IB1 = −10IB2 = IC = −1 A
VBE = 5 V VCC = −25 V VBE = −5 V VCC = 25 V
100 mF 470 mF
NSVS50030SB3, NSVS50031SB3
www.onsemi.com
3
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 2. IC − VCE Figure 3. IC − VCE
Figure 4. IC − VBE Figure 5. IC − VBE
Figure 6. hFE − ICFigure 7. hFE − IC
VCE, Collector−to−Emitter Voltage [V]
IC, Collector Current [A]
VBE, Base−to−Emitter Voltage [V]
IC, Collector Current [A]
hFE, DC Current Gain
−0.4
−0.8
−1.2
−1.6
−2.0
0
0−0.2 −0.4 −0.6 −0.8 −1.0
− 6 mA
−4 mA
−2 mA
−40 mA
−30 mA
−20 mA
−10 mA
−8 mA
IB = 0 mA
NSVS50030SB3
0.4 0.8 1.2 1.6 2.0
5.0
2.5
0
0
4.5
4.0
3.5
3.0
2.0
1.5
1.0
0.5
100 mA 80 mA
60 mA
40 mA40 mA
20 mA
10 mA
5 mA
IB = 0 mA
VCE, Collector−to−Emitter Voltage [V]
IC, Collector Current [A]
NSVS50031SB3
3.0
2.0
2.5
1.5
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 1.00.8
1000
7
5
3
2
10
23 57−0.01 −1.0−0.1 2 3 5 7 2 3
100
7
5
3
2
1000
7
5
3
2
10
23 57
0.01 1.00.1 2 3 5 7 2 3
100
7
5
3
2
NSVS50030SB3
VCE = −2 V
IC, Collector Current [A]
NSVS50031SB3
VCE = 2 V
VBE, Base−to−Emitter Voltage [V]
IC, Collector Current [A]
TA = 75°C
25°C
−25°C
TA = 75°C
25°C
−25°C
NSVS50030SB3
VCE = −2 V
TA = 75°C
25°C−25°C
hFE, DC Current Gain,
IC, Collector Current [A]
NSVS50031SB3
VCE = 2 V
TA = 75°C
25°C−25°C
NSVS50030SB3, NSVS50031SB3
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 8. fT − ICFigure 9. fT − IC
Figure 10. Cob − VCB Figure 11. Cob − VCB
Figure 12. VCE(sat) − ICFigure 13. VCE(sat) − IC
fT
, Gain−Bandwidth Product [MHz]
VCB, Collector−to−Base Voltage [V]
Cob, Output Capacitance [pF]
VCE(sat), Collector−to−Emitter
Saturation Voltage [mV]
10
100
5
7
3
2
23 57−1.0 −10 2 735
23 57−0.01 −1.0 −10−0.12 3 57 5723
−10000
7
5
3
2
7
5
3
2
−100
−1000
−10
7
5
3
2
23 570.01 1.00.1 2 3 5 7 2 53
1000
7
5
3
2
100
7
5
3
2
10
23 57 23 257−0.01 −1.0−0.1 53
1000
5
7
100
3
2
5
7
3
2
23 57 23 2570.01 1.00.1 53
1000
5
7
100
3
2
5
7
3
2
NSVS50030SB3
VCE = −10 V
NSVS50031SB3
VCE = 10 V
IC, Collector Current [A] IC, Collector Current [A]
fT
, Gain−Bandwidth Product [MHz]
NSVS50030SB3
f = 1 MHz
NSVS50031SB3
f = 1 MHz
10
100
5
7
3
2
5
7
3
2
27351027351.027350.1
VCB, Collector−to−Base Voltage [V]
Cob, Output Capacitance [pF]
IC, Collector Current [A] IC, Collector Current [A]
VCE(sat), Collector−to−Emitter
Saturation Voltage [mV]
NSVS50030SB3
IC / IB = 20
TA = 75°C
25°C
−25°C
NSVS50031SB3
IC / IB = 20
TA = 75°C
25°C
−25°C
NSVS50030SB3, NSVS50031SB3
www.onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 14. VCE(sat) − ICFigure 15. VCE(sat) − IC
Figure 16. VBE(sat) − ICFigure 17. VBE(sat) − IC
Figure 18. ASO Figure 19. PC − TA
TA, Ambient Temperature [5C]
PC, Collector Dissipation [W]
23 57−0.01 −1.0 −10−0.1 2 3 5 7 3 5 72
−1000
−10000
7
5
3
2
7
5
3
2
−100
7
5
3
2
−10
23 570.01 1.00.1 2 3 5 7 2 53
1000
7
5
3
2
100
7
5
3
2
10
5
3
2
−100
23 57−0.01 −1.0 −10−0.1 2 3 5 7 2 3 5 7
−1000
7
5
3
2
5
3
2
100
23 570.01 1.00.1 2 3 5 7 2 53
1000
7
5
3
2
1.2
0
0.2
0.4
0.6
1.0
1.1
0 25 50 75 100 125 150 175 200
NSVS50030SB3
IC / IB = 50
NSVS50031SB3
IC / IB = 50
TA = 75°C
25°C
−25°C
TA = 75°C
25°C
−25°C
VCE(sat), Collector−to−Emitter
Saturation Voltage [mV]
IC, Collector Current [A] IC, Collector Current [A]
VCE(sat), Collector−to−Emitter
Saturation Voltage [mV]
NSVS50030SB3
IC / IB = 50
NSVS50031SB3
IC / IB = 50
VBE(sat), Base−to Emitter
Saturation Voltage [mV]
IC, Collector Current [A]
VBE(sat), Base−to Emitter
Saturation Voltage [mV]
IC, Collector Current [A]
TA = −25°C
25°C
75°C
TA = −25°C
25°C
75°C
0.9
0.8
0.7
0.5
0.3
0.1
0.01
0.1
1
10
0.1 1 10 100
IC, Collector Current [A]
VCE, Collector−to−Emitter Voltage [V]
100 ms
500Ăms
NSVS50030SB3/
NSVS50031SB3
TA = 25°C
Single Pulse
Mounted on a ceramic board
(600 mm2 x 0.8 mm)
For PNP minus sign is omitted.
1 ms
10 ms
100 ms
DC operation
CPH3
CASE 318BA
ISSUE O
DATE 30 NOV 2011
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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CPH3
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