NSVS50030SB3, NSVS50031SB3 Bipolar Transistor (-)50 V, (-)3 A, Low VCE(sat), (PNP)NPN Single This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for motor driver, relay driver, DC-DC converter of automotive applications. AEC-Q101qualified and PPAP capable. www.onsemi.com ELECTRICAL CONNECTION 3 3 Features * * * * * * * Large Current Capacitance Low Collector to Emitter Saturation Voltage High-Speed Switching High Allowable Power Dissipation AEC-Q101Qualified and PPAP Capable Pb-Free, Halogen Free and RoHS Compliance Ultra Small Package Facilitates Miniaturization in End Products (Mounting Height: 0.9 mm) 1 1 2 2 NSVS50030SB3 NSVS50031SB3 3 1 Typical Applications * DC / DC Converter * Relay Drivers, Lamp Drivers, Motor Drivers * Flash 2 CPH3 CASE 318BA Specifications MARKING DIAGRAMS ABSOLUTE MAXIMUM RATINGS at TA = 25C Parameter Symbol Value Unit Collector to Base Voltage VCBO (-50) 100 V Collector to Emitter Voltage VCES (-50) 100 V Collector to Emitter Voltage VCEO (-)50 V Emitter to Base Voltage VEBO (-)6 V Collector Current IC (-)3 A Collector Current (Pulse) ICP (-)6 A Base Current IB (-)600 mA Collector Dissipation (Note 1) PC 1.1 W Junction Temperature Tj 175 _C Storage Temperature Tstg -55 to +175 _C XXXM XXX M = HAE: NSVS50030SB3 = HCE: NSVS50031SB3 = Single Digit Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on ceramic substrate. (600 mm2 x 0.8 mm) (c) Semiconductor Components Industries, LLC, 2017 December, 2018 - Rev. 1 1 Publication Order Number: NSVS50030SB3/D NSVS50030SB3, NSVS50031SB3 ORDERING INFORMATION Marking Package Shipping (Qty / Packing) NSVS50030SB3T1G HAE 3,000/ Tape & Reel NSVS50031SBST1G HCE CPH3 (Pb-Free / Halogen Free) Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Value Max Unit Collector Cutoff Current ICBO VCB = (-)40 V, IE = 0 A (-)1 A Emitter Cutoff Current IEBO VEB = (-)4 V, IC = 0 A (-)1 A DC Current Gain hFE VCE = (-)2 V, IC = (-)100 mA fT VCE = (-)10 V, IC = (-)500 mA (360) 380 MHz Cob VCB = (-)10 V, f = 1 MHz (24) 13 pF VCE(sat) IC = (-)1 A, IB = (-)50 mA (-100) 80 (-200) 120 mV IC = (-)2 A, IB = (-)100 mA (-185) 140 (-500) 210 mV (-)0.88 (-)1.2 V Symbol Parameter Gain-Bandwidth Product Output Capacitance Collector to Emitter Saturation Voltage Min Conditions Typ 200 560 Base to Emitter Saturation Voltage VBE(sat) IC = (-)2 A, IB = (-)100 mA Collector to Base Breakdown Voltage V(BR)CBO IC = (-)10 mA, IE = 0 A (-50) 100 V Collector to Emitter Breakdown Voltage V(BR)CES IC = (-)100 mA, RBE = 0 W (-50) 100 V Collector to Emitter Breakdown Voltage V(BR)CEO IC = (-)1 mA, RBE = (-)50 V Emitter to Base Breakdown Voltage V(BR)EBO IE = (-)10 mA, IC = 0 A (-)6 V Turn-On Time ton Storage Time Fall Time (30) 35 ns tstg (230) 300 ns tf (15) 22 ns See Fig.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PW=20 ms DC 1% IB1 PW=20 ms DC 1% IB2 OUTPUT INPUT VR 50 W RB + 100 mF VBE = 5 V + IB1 IB2 OUTPUT INPUT VR RL 50 W 470 mF RB + 100 mF VCC = -25 V VBE = -5 V + 470 mF VCC = 25 V 10IB1 = -10IB2 = IC = -1 A 10IB1 = -10IB2 = IC = 1 A NSVS50030SB3 NSVS50031SB3 Figure 1. Switching Time Test Circuit www.onsemi.com 2 RL NSVS50030SB3, NSVS50031SB3 TYPICAL PERFORMANCE CHARACTERISTICS NSVS50030SB3 -10 mA -8 mA - 6 mA -1.2 -4 mA -0.8 -2 mA 60 mA 3.5 40 mA 3.0 2.5 20 mA 2.0 10 mA 1.5 5 mA 0.5 IB = 0 mA 0 -0.2 -0.4 -0.6 -0.8 0 -1.0 IB = 0 mA 0 0.4 0.8 3.0 TA = 75C 1.0 25C 0.5 2.0 1.5 TA = 75C 1.0 25C 0.5 -25C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VBE, Base-to-Emitter Voltage [V] -25C 0 0.2 TA = 75C 2 25C NSVS50030SB3 VCE = -2 V -25C 100 7 5 3 0.8 1.0 1000 7 NSVS50031SB3 VCE = 2 V 5 TA = 75C 3 2 25C -25C 100 7 5 3 2 2 10 -0.01 2 3 0.6 Figure 5. IC - VBE hFE, DC Current Gain, hFE, DC Current Gain 7 0.4 VBE, Base-to-Emitter Voltage [V] Figure 4. IC - VBE 1000 2.0 NSVS50031SB3 VCE = 2 V 2.5 IC, Collector Current [A] IC, Collector Current [A] 3.0 2.0 1.5 1.6 Figure 3. IC - VCE NSVS50030SB3 VCE = -2 V 2.5 1.2 VCE, Collector-to-Emitter Voltage [V] Figure 2. IC - VCE 5 3 80 mA 4.0 VCE, Collector-to-Emitter Voltage [V] 0 100 mA 1.0 -0.4 0 NSVS50031SB3 4.5 -30 mA -1.6 5.0 -20 mA -40 mA IC, Collector Current [A] IC, Collector Current [A] -2.0 5 7 -0.1 2 3 5 7 -1.0 10 0.01 2 3 2 3 IC, Collector Current [A] 5 7 0.1 2 3 5 7 1.0 IC, Collector Current [A] Figure 6. hFE - IC Figure 7. hFE - IC www.onsemi.com 3 2 3 NSVS50030SB3, NSVS50031SB3 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 1000 NSVS50030SB3 VCE = -10 V 7 5 3 2 100 7 5 3 2 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 NSVS50031SB3 VCE = 10 V 7 fT, Gain-Bandwidth Product [MHz] fT, Gain-Bandwidth Product [MHz] 1000 5 3 2 100 7 5 3 2 0.01 2 3 5 IC, Collector Current [A] 2 3 5 7 1.0 2 3 5 IC, Collector Current [A] Figure 8. fT - IC Figure 9. fT - IC 100 100 NSVS50030SB3 f = 1 MHz 7 NSVS50031SB3 f = 1 MHz 7 Cob, Output Capacitance [pF] Cob, Output Capacitance [pF] 5 7 0.1 5 3 2 5 3 2 10 7 5 3 10 -1.0 2 3 5 7 -10 2 3 2 5 7 0.1 2 3 5 7 1.0 VCB, Collector-to-Base Voltage [V] 2 3 5 7 10 2 3 5 7 VCB, Collector-to-Base Voltage [V] Figure 10. Cob - VCB Figure 11. Cob - VCB -10000 NSVS50030SB3 7 IC / IB = 20 5 3 2 -1000 7 5 3 2 TA = 75C -100 7 -25C 5 3 25C 2 -10 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 1000 NSVS50031SB3 IC / IB = 20 VCE(sat), Collector-to-Emitter Saturation Voltage [mV] VCE(sat), Collector-to-Emitter Saturation Voltage [mV] 7 5 3 2 100 7 5 3 TA = 75C -25C 2 10 0.01 2 3 IC, Collector Current [A] 25C 5 7 0.1 2 3 5 7 1.0 IC, Collector Current [A] Figure 12. VCE(sat) - IC Figure 13. VCE(sat) - IC www.onsemi.com 4 2 3 5 NSVS50030SB3, NSVS50031SB3 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 1000 7 VCE(sat), Collector-to-Emitter Saturation Voltage [mV] VCE(sat), Collector-to-Emitter Saturation Voltage [mV] -10000 NSVS50030SB3 7 IC / IB = 50 5 3 2 -1000 7 5 3 TA = 75C 2 -100 -25C 7 5 25C 3 2 -10 -0.01 2 3 5 7-0.1 2 3 5 7 -1.0 2 3 5 7 -10 NSVS50031SB3 IC / IB = 50 5 3 2 100 7 TA = 75C -25C 5 3 2 25C 10 0.01 2 3 5 7 0.1 IC, Collector Current [A] Figure 14. VCE(sat) - IC 5 TA = -25C 7 75C 5 25C 3 2 -100 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 1000 TA = -25C 7 75C 5 25C 3 2 100 0.01 2 3 2 3 5 7 1.0 2 3 5 Figure 17. VBE(sat) - IC 10 1.2 500ms 1 ms 100 ms PC, Collector Dissipation [W] IC, Collector Current [A] 5 7 0.1 IC, Collector Current [A] Figure 16. VBE(sat) - IC 10 ms DC operation 1 100 ms 0.01 5 2 IC, Collector Current [A] 0.1 2 3 NSVS50031SB3 IC / IB = 50 3 VBE(sat), Base-to Emitter Saturation Voltage [mV] VBE(sat), Base-to Emitter Saturation Voltage [mV] 5 2 -1000 5 7 1.0 Figure 15. VCE(sat) - IC NSVS50030SB3 IC / IB = 50 3 2 3 IC, Collector Current [A] NSVS50030SB3/ NSVS50031SB3 TA = 25C Single Pulse Mounted on a ceramic board (600 mm2 x 0.8 mm) For PNP minus sign is omitted. 0.1 1 10 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 100 VCE, Collector-to-Emitter Voltage [V] 0 25 50 75 100 125 150 175 200 TA, Ambient Temperature [5C] Figure 18. ASO Figure 19. PC - TA www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS CPH3 CASE 318BA ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON65437E CPH3 DATE 30 NOV 2011 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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