BSL202SN
OptiMOS®2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• dv/dt rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTA=25 °C 7.5 A
TA=70 °C 6.0
Pulsed drain current
ID,pulse TA=25 °C 30
Avalanche energy, single pulse
EAS ID=7.5 A, RGS=25 W30 mJ
Reverse diode dv/dtdv/dt
ID=7.5 A, VDS=16 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±12 V
Power dissipation1) Ptot TA=25 °C 2 W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
ESD Class
JESD22-A114 -HBM 0 (0V to 250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
TSOP-6
1
2
3
4
5
6
VDS
20
RDS(on),max
VGS=4.5 V
22
mW
VGS=2.5 V
36
ID
7.5
Product Summary
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSL202SN
TSOP-6
H6327: 3000 pcs/ reel
sPD
Yes
Non dry
Rev 2.0 page 1 2014-01-08
BSL202SN
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
RthJS - - 50 K/W
SMD version, device on PCB
RthJA minimal footprint - - 230
6 cm2 cooling area1) - - 62.5
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS= 0 V, ID= 250 µA 20 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=30 µA 0.7 0.95 1.2
Drain-source leakage current
IDSS
VDS=20 V, VGS=0 V,
Tj=25 °C
- - 1
mA
VDS=20 V, VGS=0 V,
Tj=150 °C
- - 100
Gate-source leakage current
IGSS VGS=12 V, VDS=0 V - - 100 nA
Drain-source on-state resistance
RDS(on) VGS=2.5 V, ID=5.9 A -26 36 mW
VGS=4.5 V, ID=7.5 A -17 22
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=7.5 A
25 - S
Values
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. (t < 5 sec.)
Rev 2.0 page 2 2014-01-08
BSL202SN
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -863 1147 pF
Output capacitance
Coss -278 370
Reverse transfer capacitance
Crss -40 60
Turn-on delay time
td(on) -8.26 -ns
Rise time
tr-27.5 -
Turn-off delay time
td(off) -18.9 -
Fall time
tf-4.06 -
Gate Charge Characteristics
Gate to source charge
Qgs -1.82 2.42 nC
Gate to drain charge
Qgd -1.1 1.6
Gate charge total
Qg-5.8 8.7
Gate plateau voltage
Vplateau - 2 - V
Reverse Diode
Diode continous forward current IS- - 2 A
Diode pulse current
IS,pulse - - 30
Diode forward voltage
VSD
VGS=0 V, IF=7.5 A,
Tj=25 °C
-0.8 1.2 V
Reverse recovery time
trr -14.7 -ns
Reverse recovery charge
Qrr -4.62 -nC
VR=10 V, IF=7.5 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=10 V,
f=1 MHz
VDD=10 V, VGS=4.5 V,
ID=7.5 A, RG,ext=6 W
VDD=10 V, ID=7.5 A,
VGS=0 to 4.5 V
Rev 2.0 page 3 2014-01-08
BSL202SN
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥4.5 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
10-2
10-1
100
101
102
10-3
10-2
10-1
100
101
102
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
101
10-1
100
101
102
ZthJA [K/W]
tp [s]
0
0.4
0.8
1.2
1.6
2
0 40 80 120 160
Ptot [W]
TA [°C]
0
1
2
3
4
5
6
7
8
0 40 80 120 160
ID [A]
TA [°C]
Rev 2.0 page 4 2014-01-08
BSL202SN
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
1.8 V
2 V
2.2 V
2.5 V
3 V
3.5 V
4.5 V
6 V
0
10
20
30
40
50
60
0 4 8 12 16
RDS(on) [mW]
ID [A]
0
5
10
15
20
25
30
0 1 2 3 4 5 6 7 8
gfs [S]
ID [A]
1.6 V
1.8 V
2 V
2.2 V
2.4 V
2.5 V
3 V
4.5 V
0
2
4
6
8
10
12
14
16
0 1 2 3
ID [A]
VDS [V]
25 °C
150 °C
0
1
2
3
4
5
6
7
8
0 1 2 3
ID [A]
VGS [V]
Rev 2.0 page 5 2014-01-08
BSL202SN
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=7.5 A; VGS=4.5 V VGS(th)=f(Tj); VDS=VGS; ID=30 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
10
20
30
40
-60 -20 20 60 100 140
RDS(on) [mW]
Tj [°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
-60 -20 20 60 100 140
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
101
102
103
104
0 5 10 15 20
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
100
101
102
0 0.4 0.8 1.2 1.6
IF [A]
VSD [V]
Rev 2.0 page 6 2014-01-08
BSL202SN
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=7.5 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=250 µA
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140
VBR(DSS) [V]
Tj [°C]
4 V
10 V
16 V
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
IAV [A]
tAV [µs]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
Rev 2.0 page 7 2014-01-08
BSL202SN
Package Outline:
Footprint: Packaging:
Dimensions in mm
TSOP6
Rev 2.0 page 8 2014-01-08
BSL202SN
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev 2.0 page 9 2014-01-08