©2000 Fairchild Semiconductor International
September 2000
SGH23N60UFD Rev. A
IGBT
SGH23N60UFD
SGH23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses.
UFD series is designed for the applications such as mot or
control and general inverters where High Speed Swit ching
is required.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
• High Input Impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteris ti cs
Symbol Description SGH23N60UFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C23 A
Collector Current @ TC = 100°C12 A
ICM (1) Pulsed Collector Current 92 A
IFDiode Continuous Forward Current @ TC = 100°C12 A
IFM Diode Maximum Forward Current 92 A
PDMaximum Power Dissipation @ TC = 25°C 100 W
Maximum Power Dissipation @ TC = 100°C40 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Juncti on-to-Case -- 1.2 °C/W
RθJC(DIOD E) Thermal Resistance, Junction-to- Case -- 2.5 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 40 °C/W
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
GCETO-3P
G
C
E
G
C
E
©2000 Fairchild Semiconductor International SGH23N60UFD Rev. A
SGH23N60UFD
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coeff . of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G -E Th reshold Voltage IC = 12mA, VCE = VGE 3.5 4.5 6.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 12A, VGE = 15V -- 2.1 2.6 V
IC = 23A, VGE = 15V -- 2.6 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 720 -- pF
Coes Output Capacitance -- 100 -- pF
Cres Reverse Transfer Capacitance -- 25 -- pF
Switching Characteristics
td(on) Turn- On Delay Time
VCC = 300 V, IC = 12A,
RG = 23Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 17 -- ns
trRise Time -- 27 -- ns
td(off) Turn-Off D e l a y Time -- 60 130 n s
tfFall Time -- 70 150 ns
Eon Turn-On Switching Loss -- 115 -- uJ
Eoff Tu r n - Off Sw i tchin g Loss -- 13 5 -- uJ
Ets Total Switching Loss -- 250 400 uJ
td(on) Turn- On Delay Time
VCC = 300 V, IC = 12A,
RG = 23Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 23 -- ns
trRise Time -- 32 -- ns
td(off) Turn-Off D e l a y Time -- 100 200 n s
tfFall Time -- 220 250 ns
Eon Turn-On Switching Loss -- 205 -- uJ
Eoff Turn-Off Switching Loss -- 320 -- uJ
Ets Total Switching Loss -- 525 800 uJ
QgTotal Gate Charge VCE = 300 V, IC = 12A,
VGE = 15V
-- 49 80 nC
Qge Gate-Emitter Charge -- 11 17 nC
Qgc Gate-Collector Charge -- 14 22 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward V oltage IF = 12A TC = 25°C-- 1.4 1.7 V
TC = 100°C-- 1.3 --
trr Diode Reverse Recovery Time
IF = 12A,
di/dt = 200A/us
TC = 25°C-- 42 60 ns
TC = 100°C-- 80 --
Irr Diode Peak Reverse Recovery
Current TC = 25°C-- 3.5 6.0 A
TC = 100°C-- 5.6 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 80 180 nC
TC = 100°C-- 220 --
©2000 Fairchild Semiconductor International SGH23N60UFD Rev. A
SGH23N60UFD
048121620
0
4
8
12
16
20 Common Emitter
TC = 25℃
24A
12A
IC = 6A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V ]
0 4 8 12 16 20
0
4
8
12
16
20 Com mon E mitter
TC = 125℃
24A
12A
IC = 6A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
0
5
10
15
20
0.1 1 10 100 1000
Duty cycle : 50 %
TC = 100℃
Power Dissipation = 21W
VCC = 30 0V
Load Cu rrent : pe ak of square w ave
Frequency [KHz]
Load Current [A]
0306090120150
0
1
2
3
4
24A
12A
IC = 6A
Common Emitter
VGE = 15V
Coll ector - Emi tter Voltage, V
CE [V]
Case Temperature, TC [℃]
0.5 1 10
0
10
20
30
40
50 Comm o n E mi tter
VGE = 15V
TC = 25℃
TC = 125℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
02468
0
20
40
60
80
100 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Cu r r ent, I
C [A]
Collector - Emitter Voltage, VCE [V]
Fig 1. Ty pical Out put Char ac terist ics Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturat i on Voltage vs. Case
Temp erature at Variant Curr ent Level Fig 4. Load Cu rr ent vs. Fr equency
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
©2000 Fairchild Semiconductor International SGH23N60UFD Rev. A
SGH23N60UFD
4 8 12 16 20 24
50
100
1000
Toff
Tf
Toff
Tf
Comm on Emitter
VCC = 300V, VGE = ±15V
RG = 23Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
Collector Current, IC [A]
4 8 12 16 20 24
10
100
200
Ton
Tr
Common Emitter
VCC = 300V, VGE = ±15V
RG = 23Ω
TC = 25℃
TC = 125℃
Swit ch ing Time [ n s]
Collector Current, IC [A]
110100200
30
100
1000
Eon
Eoff
Eon
Eoff
Com mon E mitter
VCC = 300 V, VGE = ±15V
IC = 12A
TC = 25℃
TC = 125℃
Switc hing Loss [uJ]
Gate Resistance, RG [Ω]
110100200
50
100
1000
Toff
Tf
Toff
Tf
Common Emitter
VCC = 300V, VGE = ±15V
IC = 12A
TC = 25℃
TC = 125℃
Switching Time [ns ]
Gate Resistance, RG [Ω]
110100200
10
100
200 Common Emitter
VCC = 300V, VGE = ±15V
IC = 12A
TC = 25℃
TC = 125℃
Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
11030
0
200
400
600
800
1000
1200
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1M Hz
TC = 25℃
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
Fig 7. Capaci tanc e C harac t eristics Fig 8. Tur n- O n C har acteristi cs vs.
Gate Resistance
Fig 9. Tur n-Off Charac teri st ic s vs.
Gate Resistance Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On C har acteristi cs vs.
Collector Current Fig 12. Tur n- O ff Characteri st i cs vs.
Collector Current
©2000 Fairchild Semiconductor International SGH23N60UFD Rev. A
SGH23N60UFD
10-5 10-4 10-3 10-2 10-1 100101
0.005
0.01
0.1
1
5
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Therm al R esp onse, Zthjc [ ℃/W]
Rectangular Pu lse Duration [sec]
0.3 1 10 100 1000
0.1
1
10
100
300
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly w ith increase
in temperature
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
Collecto r Cu r rent, I
C [A]
Collector-Emitter Vol tage, VCE [V]
1 10 100 1000
0.1
1
10
100
200
Safe Operating Area
VGE = 20V, TC = 100℃
Collector C u rrent, I
C [A]
Collector-Emitter Voltage, VCE [V]
4 8 12 16 20 24
10
100
1000
Eoff
Eon
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ±15V
RG = 23Ω
TC = 25℃
TC = 125℃
Swit chin g Loss [ uJ]
Collector Current, IC [A ]
0 1020304050
0
3
6
9
12
15
300 V
200 V
VCC = 10 0 V
Comm on Em itter
RL = 25 Ω
TC = 25℃
Gate - Em itter Vo l ta ge , V
GE [ V ]
Gat e Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Dut y factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Fig 17. Tra nsien t The rma l Imped anc e of IGBT
©2000 Fairchild Semiconductor International SGH23N60UFD Rev. A
SGH23N60UFD
100 1000
0
20
40
60
80
100 VR = 200V
IF = 12A
TC = 25℃
TC = 100℃
Reverce Recovery Time, t
rr [ns]
di/dt [A/us]
100 1000
0
100
200
300
400
500
600 VR = 200V
IF = 12A
TC = 25℃
TC = 100 ℃
Stored Recovery Charge, Q
rr [nC]
di/dt [A/us]
100 1000
1
10
100 VR = 200V
IF = 12A
TC = 25℃
TC = 100℃
Revers e Recovery Current, I
rr [A]
di/dt [A/us]
1
10
100
0123
TC = 25℃
TC = 100℃
Forward Voltage Drop, V FM [V]
Forwar d Curren t , I
F [A]
Fig 19. R everse Re covery CurrentFig 18. Forward Characteristics
Fig 20. Stored Charge Fig 21. Reverse Recovery Time
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©2000 Fairchild Semiconductor International
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
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changes at any time without notice in order to improve
design.
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The datasheet is printed for reference information only.
Rev. F1
