IGBT SGH23N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. * * * * High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A High Input Impedance CO-PAK, IGBT with FRD : trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C G TO-3P E G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C SGH23N60UFD 600 20 23 12 92 12 92 100 40 -55 to +150 -55 to +150 Units V V A A A A A W W C C 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (c)2000 Fairchild Semiconductor International Typ. ---- Max. 1.2 2.5 40 Units C/W C/W C/W SGH23N60UFD Rev. A SGH23N60UFD September 2000 Symbol C = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 720 100 25 ---- pF pF pF ------------------- 17 27 60 70 115 135 250 23 32 100 220 205 320 525 49 11 14 14 --130 150 --400 --200 250 --800 80 17 22 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units -- 1.3 -- Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 12mA, VCE = VGE IC = 12A, VGE = 15V IC = 23A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 12A, RG = 23, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 12A, RG = 23, VGE = 15V, Inductive Load, TC = 125C VCE = 300 V, IC = 12A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge (c)2000 Fairchild Semiconductor International = 25C unless otherwise noted Test Conditions TC = 25C IF = 12A TC = 100C IF = 12A, di/dt = 200A/us TC = 25C -- 42 60 TC = 100C -- 80 -- TC = 25C -- 3.5 6.0 TC = 100C -- 5.6 -- TC = 25C -- 80 180 TC = 100C -- 220 -- V ns A nC SGH23N60UFD Rev. A SGH23N60UFD Electrical Characteristics of IGBT T 50 Common Emitter VGE = 15V TC = 25 TC = 125 20V 80 15V 60 12V Collector Current, IC [A] Collector Current, I C [A] Common Emitter T C = 25 VGE = 10V 40 20 40 30 20 10 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, VCE [V] 1 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4 20 VCC = 300V Load Current : peak of square wave Common Emitter VGE = 15V 3 24A 2 12A 15 Load Current [A] Collector - Emitter Voltage, VCE [V] SGH23N60UFD 100 IC = 6A 1 10 5 0 Duty cycle : 50% T C = 100 Power Dissipation = 21W 0 0 30 60 90 120 150 0.1 1 Case Temperature, TC [] 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125 Collector - Emitter Voltage, VCE [V] Common Emitter T C = 25 Collector - Emitter Voltage, VCE [V] 1000 Frequency [KHz] 16 12 8 24A 4 12A IC = 6A 16 12 8 24A 4 12A IC = 6A 0 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE (c)2000 Fairchild Semiconductor International 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGH23N60UFD Rev. A 200 Common Emitter V GE = 0V, f = 1MHz T C = 25 1000 100 800 600 Coes 400 200 Common Emitter VCC = 300V, VGE = 15V IC = 12A TC = 25 TC = 125 Tr Cres 0 10 1 10 30 1 10 Fig 7. Capacitance Characteristics 1000 Common Emitter V CC = 300V, V GE = 15V IC = 12A T C = 25 T C = 125 Eoff Switching Loss [uJ] Toff Toff Eon Eon Eoff 100 Common Emitter VCC = 300V, VGE = 15V IC = 12A TC = 25 TC = 125 100 Tf 50 30 1 10 100 200 1 10 Gate Resistance, R G [ ] 100 200 Gate Resistance, R G [ ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 200 1000 Common Emitter V CC = 300V, VGE = 15V RG = 23 TC = 25 TC = 125 Common Emitter V CC = 300V, V GE = 15V RG = 23 T C = 25 T C = 125 Switching Time [ns] Switching Time [ns] 200 Fig 8. Turn-On Characteristics vs. Gate Resistance Tf 100 100 Gate Resistance, RG [ ] Collector - Emitter Voltage, V CE [V] Switching Time [ns] Ton Switching Time [ns] Capacitance [pF] Cies 1000 SGH23N60UFD 1200 Ton Toff Tf Toff 100 Tr Tf 10 50 4 8 12 16 20 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2000 Fairchild Semiconductor International 24 4 8 12 16 20 24 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGH23N60UFD Rev. A Eoff Eon Common Emitter V CC = 300V, V GE = 15V RG = 23 T C = 25 T C = 125 Eon Eoff Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] 100 Common Emitter RL = 25 TC = 25 12 9 300 V 6 3 0 4 8 12 16 20 24 0 10 Collector Current, IC [A] 40 50 200 100 IC MAX. (Pulsed) 50us Collector Current, IC [A] Collector Current, IC [A] 30 Fig 14. Gate Charge Characteristics 300 100us IC MAX. (Continuous) 10 1 DC Operation 0.1 20 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current 1 200 V VCC = 100 V 10 100 SGH23N60UFD 15 1000 Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 10 1 Safe Operating Area VGE = 20V, TC = 100 1 10 100 0.1 1000 1 10 Collector-Emitter Voltage, V CE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [/W] 5 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 t1 0.01 t2 0.01 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 0.005 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2000 Fairchild Semiconductor International SGH23N60UFD Rev. A SGH23N60UFD 100 T C = 25 T C = 100 Reverse Recovery Current, I rr [A] Forward Current, I F [A] 100 10 1 2 10 1 100 1 0 VR = 200V IF = 12A TC = 25 TC = 100 3 di/dt [A/us] Forward Voltage Drop, V FM [V] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 100 V R = 200V IF = 12A T C = 25 T C = 100 Reverce Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 600 500 1000 400 300 200 100 0 100 1000 di/dt [A/us] Fig 20. Stored Charge (c)2000 Fairchild Semiconductor International VR = 200V IF = 12A TC = 25 TC = 100 80 60 40 20 0 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGH23N60UFD Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2000 Fairchild Semiconductor International Rev. F1