V
RRM
= 50 V - 1000 V
I
F
= 35 A
Features
• High Surge Capability DO-5 Package
• Types up to 1000 V V
RRM
Parameter Symbol 1N1183 (R) 1N1184 (R) Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
50 100 V
1N1183 thru 1N1187R
1N1187 (R)
200
1N1186 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
y
Diode
Conditions
300
pp g
RMS reverse voltage V
RMS
35 70 V
DC blocking voltage V
DC
50 100 V
Continuous forward current I
F
35 35 A
Operating temperature T
j
-65 to 190 -65 to 190 °C
Storage temperature T
stg
-65 to 175 -65 to 175 °C
Parameter Symbol 1N1183 (R) 1N1184 (R) Unit
Diode forward voltage 1.2 1.2
10 10 μA
10 10 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.25 0.25 °C/W
10
A595
Reverse current I
R
V
F
595
V
R
= 50 V, T
j
= 25 °C
I
F
= 35 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
140
595 595
-65 to 175
35 35
-65 to 175
1N1187 (R)
10 10
1N1186 (R)
0.25
V
R
= 50 V, T
j
= 140 °C
0.25
1.2 1.2
10
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-65 to 190 -65 to 190
T
C
= 25 °C, t
p
= 8.3 ms
210
300200
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
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1N1183 thru 1N1187R
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