CM150TX-24S Six IGBTMODTM NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 150 Amperes/1200 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 X W 54 Y 30 K 55 29 K28 V 56 57 P V 59 60 S R 26 K K 61 Q 27 L 58 K B 25 24 23 AF DETAIL "B" 1 U T 2 K 3 L 4 5 6 7 K 8 L K L K L K L DETAIL "A" AD AN 9 10 11 12 13 14 15 16 17 18 19 20 21 22 K N (4 PLACES) AC AP AQ AM AL AE DETAIL "B" P(52-53) B(24-25) T R S (1-2) (5-6) (9-10) N(57-58) TH2 (28) TH1 (29) P1(54-55) GUP(49) EUP(48) GVP(44) EVP(43) GWP(39) EWP(38) U(13-14) V(17-18) W(21-22) GUN(34) GVN(33) GWN(32) GB(35) N1(60-61) E(31) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A B C D E F G H J K L M N P Q R S T U V 4.79 2.44 0.51 4.65 4.330.02 3.89 3.72 0.16 0.51 0.15 0.45 0.6 0.22 Dia. 2.30 1.53 1.970.02 2.26 0.30 0.28 0.3 121.7 62.0 13.0 118.1 110.00.5 99.0 94.5 4.06 13.09 3.81 11.43 15.24 5.5 Dia. 58.4 39.0 50.00.5 57.5 7.75 7.25 7.62 W X Y Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ 0.46 0.16 0.61 0.27 0.81 0.67 0.12 0.14 0.03 0.15 0.05 0.025 0.29 0.24 0.49 0.06 0.17 Dia. 0.10 Dia. 0.08 Dia. 11.66 4.2 15.48 7.0 20.5 17.0 3.0 3.5 0.8 3.75 1.15 0.65 7.4 6.2 12.5 1.5 4.3 Dia. 2.5 Dia. 2.1 Dia. 04/10 Rev. 0 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM150TX-24S is a 1200V (VCES), 150 Ampere Six-IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150TX-24S Six IGBTMODTM NX-S Series Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Characteristics Symbol CM150TX-24S Units Maximum Junction Temperature (Inverter Part) Tj(max) +175 C Maximum Junction Temperature (Brake Part, Converter Part) Tj(max) +150 C Operating Power Device Junction Temperature Tj(op) -40 to 150 C Tstg -40 to 125 C Mounting Torque, M5 Mounting Screws -- 31 in-lb Mounting Torque, M5 Main Terminal Screws -- 31 in-lb Storage Temperature Module Weight (Typical) -- 270 Grams VISO 2500 Vrms Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES 20 Volts Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) Inverter Sector Collector Current (DC, TC = 119C)*1,*5 IC 150 Amperes ICRM 300 Amperes Total Power Dissipation (TC = 25C)*1,*5 Ptot 1150 Watts Emitter Current, Free Wheeling Diode Forward Current (TC = 25C)*1,*5 IE*3 150 Amperes IERM*3 300 Amperes Collector Current (Pulse)*4 Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 *1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips. *3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *5 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 2 04/10 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150TX-24S Six IGBTMODTM NX-S Series Module 150 Amperes/1200 Volts Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Inverter Sector Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, VGE = 0V -- -- 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V -- -- 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25C*6 -- 1.7 2.15 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25C -- 1.75 2.2 Volts (Terminal) IC = 150A, VGE = 15V, Tj = 125C -- 1.95 -- Volts IC = 150A, VGE = 15V, Tj = 150C -- 2.0 -- Volts -- -- 15 nF -- -- 3 nF (Chip) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VGE = 0V, VCE = 10V -- -- 0.25 nF VCC = 600V, IC = 150A, VGE = 15V -- 350 -- nC -- -- 800 ns VCC = 600V, IC = 150A, *7 -- -- 200 ns Inductive Turn-on Delay Time td(on) Load Turn-on Rise Time tr Switch Turn-off Delay Time td(off) VGE = 15V, -- -- 600 ns Time Turn-off Fall Time tf RG = 5.1, Inductive Load, -- -- 300 ns Reverse Recovery Time trr*3 IE = 150A -- -- 300 ns Reverse Recovery Charge Qrr*3 -- 8.0 -- C Turn-on Switching Loss per Pulse Eon VCC = 600V, IC (IE) = 150A, *7 -- 27 -- mJ Turn-off Switching Loss per Pulse Eoff VGE = 15V, RG = 5.1, -- 16 -- mJ *3 Reverse Recovery Loss per Pulse Erec Tj = 150C, Inductive Load -- 12 -- mJ Emitter-Collector Voltage VEC*3 IE = 150A, VGE = 0V, Tj = 25C -- 1.75 2.2 Volts IE = 150A, VGE = 0V, Tj = 125C IE = 150A, VGE = 0V, Tj = 150C VEC*3 Emitter-Collector Voltage IE = 150A, VGE = 0V -- 1.75 -- Volts -- 1.75 -- Volts -- 1.7 2.15 Volts (Chip) Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*1 Rth(j-c)Q Per IGBT -- -- 0.13 K/W Case*1 Rth(j-c)D Per FWDi -- -- 0.23 K/W rg Per Switch -- 13 -- Thermal Resistance, Junction to Internal Gate Resistance *1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips. *3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. *7 Recommended maximum collector supply voltage VCC is 800Vdc. 04/10 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150TX-24S Six IGBTMODTM NX-S Series Module 150 Amperes/1200 Volts NTC Thermistor Sector, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units R TC = 25C 4.85 5.00 5.15 k Zero Power Resistance Deviation of Resistance B Constant Power Dissipation R/R TC = 100C, R100 = 493 -7.3 -- +7.8 % B(25/50) Approximate by Equation*9 -- 3375 -- K P25 TC = 25C -- -- 10 mW Test Conditions Module, Tj = 25C unless otherwise specified Characteristics Symbol Lead Resistance (Main Terminals-Chip) Contact Thermal Resistance*1 Min. Typ. Max. Units Rlead TC = 25C (Per Switch) -- -- 1.8 m Rth(c-f) Thermal Grease Applied -- 0.015 -- K/W (Per 1 Module)*2 (Case to Heatsink) *1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips. *2 Typical value is measured by using thermally conductive grease of = 0.9 [W/(m * K)]. R25 1 1 *9 B(25/50) = In( )/( - ) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K], R50 T25 T50 T25 = 25 [C] + 273.15 = 298.15 [K], T50 = 50 [C] + 273.15 = 323.15 [K] COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 300 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 250 200 150 100 50 0 3.5 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 70 VCC = 600V VGE = 15V RG = 5.1 Tj = 125C Inductive Load Eon Eoff Err 25 20 15 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 30 10 5 0 0 50 100 COLLECTOR CURRENT, IC, (AMPERES) 4 150 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 250 30 VGE = 0V Tj = 25C Tj = 125C Tj = 150C 0.5 1.0 50 2.0 2.5 10 5 0 50 100 150 SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 70 Eon Eoff Err 30 20 10 0 15 COLLECTOR CURRENT, IC, (AMPERES) 40 0 20 0 3.0 VCC = 600V VGE = 15V RG = 5.1 Tj = 150C Inductive Load Eon Eoff Err 25 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) VCC = 600V VGE = 15V IC = 150A Tj = 150C Inductive Load 60 1.5 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) VGE = 15V Tj = 25C Tj = 125C Tj = 150C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-CURRENT, IC, (AMPERES) 300 SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) 10 20 30 40 GATE RESISTANCE, RG, () 50 60 VCC = 600V VGE = 15V IC = 150A Tj = 125C Inductive Load 60 50 Eon Eoff Err 40 30 20 10 0 0 10 20 30 40 50 60 GATE RESISTANCE, RG, () 04/10 Rev. 0