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Toshiba Electronic Devices & Storage Corporation
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2712
Audio Frequency General Purpose Amplifier Applications
AEC-Q101 Qualified (Note1).
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 70 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1162
Small package
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Collector power dissipation PC (Note 1) 200 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1： Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm2 × 3)
Marking
Unit
: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
Start of commercial production
1982-10
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 60 V, IE = 0 A 0.1 µA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 A 0.1 µA
DC current gain hFE
(Note) VCE = 6 V, IC = 2 mA 70 700
Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA 0.1 0.25 V
Transition frequency fT VCE = 10 V, IC = 1 mA 80 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz 2.0 3.5 pF
Noise figure NF VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kΩ 1.0 10 dB
Note: hFE classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, BL (L): 350 to 700
( ) marking symbol
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Toshiba Electronic Devices & Storage Corporation
Characteristics Curves
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Toshiba Electronic Devices & Storage Corporation
0
50
100
150
200
250
300
025 50 75 100 125 150
COLLECTOR POWER DISSIPATION
Pc(mW)
AMBIENT TEMPERATURE Ta(℃)
Pc- Ta
Mounted on an FR4 board
(25.4 mm ×25.4 mm ×1.6 mm,
Cu pad: 0.8 mm2×3)
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Toshiba Electronic Devices & Storage Corporation
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