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01/06/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
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2N7000
N-Channel Enhancement-Mode
Vertical DMOS FET
Package Option
Note: See Package Outline section for dimensions.
Ordering Information Order Number / Package
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92
60V 5.0Ω75mA 2N7000
Features
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏Excellent thermal stability
❏Integral Source-Drain diode
❏High input impedance and high gain
❏Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
Applications
❏Motor controls
❏Converters
❏Amplifiers
❏Switches
❏Power supply circuits
❏Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 30V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D
2
Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 V ID = 10µA, VGS = 0V
VGS(th) Gate Threshold Voltage 0.8 3.0 V VGS = VDS, ID = 1mA
IGSS Gate Body Leakage 10 nA VGS = ±15V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 1 µAV
GS = 0V, VDS = 48V
1mAV
GS = 0V, VDS = 48V
TA = 125°C
ID(ON) ON-State Drain Current 75 mA VGS = 4.5V, VDS = 10V
RDS(ON) Static Drain-to-Source ON-State Resistance 5.3 VGS = 4.5V, ID = 75mA
RDS(ON) Static Drain-to-Source ON-State Resistance 5.0 ΩVGS = 10V, ID = 0.5A
GFS Forward Transconductance 100 m VDS = 10V, ID = 0.2A
CISS Input Capacitance 60
COSS Common Source Output Capacitance 25 pF
CRSS Reverse Transfer Capacitance 5
t(ON) Turn-ON Time 10 VDD = 15V, ID = 0.5A,
t(OFF) Turn-OFF Time 10 RGEN = 25Ω
VSD Diode Forward Voltage Drop 0.85 V ISD = 0.2A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
2N7000
Thermal Characteristics
Electrical Characteristics (@ 25°C unless otherwise specified)
Ω
VGS = 0V, VDS = 25V
f = 1 MHz
ns
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Ω
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 200mA 500mA 1W 125 170 200mA 500mA
* ID (continuous) is limited by max rated Tj.
3
2N7000
Typical Performance Curves
Output Characteristics
2.5
2.0
1.5
1.0
0.5
0102030 5040
V
DS
(volts)
I
D
(amperes)
Saturation Characteristics
0246 108
V
DS
(volts)
I
D
(amperes)
Maximum Rated Safe Operating Area
0.1 100101.0
0.01
0.1
1.0
0.001
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
00 1.00.2 0.4 0.6 0.8
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0 15010050
2.0
1.0
1257525
P
D
(watts)
TO-92
TA = -55°C
25°C
125°C
VDS
VDS = 25V
TO-92 (pulsed)
8V
6V
4V
VGS =10V
0
0
0
8V
6V
4V
2.5
2.0
1.5
1.0
0.5
0
TO-92 (DC)
TC = 25°C
TO-92
P
D
= 1W
T
C
= 25°C
T
C
(°C)
V
GS
= 10V
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1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
01/06/03
©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
2N7000
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(°C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
#
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(°C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
I
D
(amperes)
BV
DSS
Variation with Temperature
0246810
2.5
2.0
1.5
1.0
0.5
-50 0 50 100 150
1.1
1.0
0.9
002.51.0
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
00.20.40.6 0.8 1.0
-50 0 50 100 150
VDS = 10V
V(th) @ 1mA
VGS = 4.5V
VGS = 10V
0.5 1.5 2.0
1.0
2.0
3.0
5.0
4.0
TA = -55°C#
25°C
125°C
0
40 pF
40V
80 pF
0
1.9
1.6
1.3
1.0
0.7
0.4
VDS = 25V
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
V
DS
(volts)
010203040
75
50
25
0
f = 1MHz
CISS
C
OSS
CRSS
RDS @ 10V, 1.0A