2003. 3. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
MJD112/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: hFE=1000(Min.), VCE=4V, IC=1A.
Low Collector-Emitter Saturation Voltage.
Straight Lead (IPAK, "L" Suffix)
Complementary to MJD117/L.
MAXIMUM RATING (Ta=25 )
DPAK
DIM MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10M
0.90 0.1O
A
C
D
B
E
K
I
J
Q
H
FF
M
O
P
L
123
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10P
0.95 MAXQ
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V
Collector Cut-off Current
ICEO VCE=50V, IB=0 - - 20
A
ICBO VCB=100V, IE=0 - - 20
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 mA
DC Current Gain hFE
VCE=3V, IC=0.5A 500 - -
VCE=3V, IC=2A 1,000 12,000 -
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.0 V
Base-Emitter On Voltage VBE(ON) VCE=3V, IC=2A - - 2.8 V
Current Gain Bandwidth Product fTVCE=10V, IC=0.75A, f=1MHz 25 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=0.1MHz - - 100 pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current
DC IC
2
A
Pulse 4
Base Current DC IB50 mA
Collector Power
Dissipation
Ta=25 PC
1.0
W
Tc=25 20
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
C
B
E
R
10kΩ0.6kΩ
R
12
= =
DIM MILLIMETERS
IPAK
D
B
Q
E
H
F F
C
A
P
L
I
J
123
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K 2.0 0.2
K
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
2003. 3. 27 2/2
MJD112/L
Revision No : 4
SATURATION VOLTAGE
CE(sat)
COLLECTOR CURRENT I (A)
C
V ,V - I
h - I
C
COLLECTOR CURRENT I (A)
0.01 0.03 0.1 0.3
FE
DC CURRENT GAIN h
P - Ta
C
CASE TEMPERATURE Ta ( C)
0
C
0
POWER DISSIPATION P (W)
50 100 150 200
5
10
15
20
25
FE C
135
100
300
500
1k
3k
5k
10k V =3V
CE
CE(sat) C
V , V (V)
0.1
0.5
0.3
0.030.01 0.1
1
3
0.3 1 3 5
10 I /I =250
5
C
V
BE(sat)
V
CE(sat)
B
BE(sat)
BE(sat)
100
10
200
503031
COLLECTOR-BASE VOLTAGE V (V)
CB
CBob
C - V
CAPACITANCE C (pF)
ob
510
30
50
f=0.1MHz
COLLECTOR-EMITTER VOLTAGE V (V)
SAFE OPERATING AREA
COLLECTOR CURRENT I (A)
1
0.01
C
CE
3 10 30 100 200
0.03
0.05
0.1
0.3
0.5
1
3
5
10
SINGLE NONREPETIVE
PULSE Tc=25 C
CURVES MUST BE DREATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED) *
C
I MAX.
(CONTINUOUS)
C
DC OPERATION
100µS*
1mS*
5mS*
Tc=25 C
Tc=25 C
Ta=25 C
1
2
1
2
