Features
• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
•Overload protection
• Short circuit protection
• Overvoltage protection
•Current limitation
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Drain source voltage VDS 60 V
On-state resistance RDS
(
on
)
100 mΩ
Current limit ID
(
lim
)
7 A
Nominal load current ID
(
ISO
)
3.5 A
Clamping energy E
A
S1000 mJ
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS chip on chip tech-
nology. Providing embedded protection functions.
protection
Overvoltage
Drain
IN
ESD
HITFET
Source
Current
1
3
Over-
protection
temperature Short circuit
protection
+
dv/dt
lim itatio n lim itation
Vbb
Short circuit
protection
LOAD
2
Overload
protection
M
•
AEC qualified
• Green product (RoHS compliant)
Datasheet 1 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage VDS 60 V
Drain source volta
g
e for short circuit
p
rotection VDS
(
SC
)
32
Continuous input current 1)
-0.2V ≤VIN ≤ 10V
VIN < -0.2V or VIN > 10V
IIN
no limit
|IIN | ≤ 2
mA
Operating temperature T
j
- 40 ... +150 °C
Storage temperature Tst
g
- 55 ... +150
Power dissipation
TC = 25 °C
Ptot 50 W
Unclamped single pulse inductive energy
ID(ISO) = 3.5 A
EAS 1000 mJ
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
VESD 3000 V
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
t
d
= 400 ms, RI = 2 Ω,ID=0,5*3.5A
t
d
= 400 ms, RI = 2 Ω,ID= 3.5A
VLD
75
70
Thermal resistance
junction - case: RthJC 2.5 K/W
junction - ambient: RthJ
75
SMD version, device on PCB: 3) RthJ
45
1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2(one layer, 70µm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
Datasheet 2 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
=25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150°C, I
D
= 10 mA
V
DS(AZ)
60 - 73 V
Off state drain current
V
DS
= 32 V, T
j
= -40...+150 °C, V
IN
= 0 V
I
DSS
- - 5 µA
Input threshold voltage
I
D
= 0.7 mA
V
IN(th)
1.3 1.7 2.2 V
Input current - normal operation, I
D
<I
D(lim)
:
V
IN
= 10 V
I
IN(1)
- 30 60 µA
Input current - current limitation mode, I
D
=I
D(lim)
:
V
IN
= 10 V
I
IN(2)
- 120 300
Input current - after thermal shutdown, I
D
=0 A:
V
IN
= 10 V
I
IN(3)
800 2200 4000
Input holding current after thermal shutdown
1)
T
j
= 25 °C
T
j
= 150 °C
I
IN(H)
500
300
-
-
-
-
On-state resistance
V
IN
= 5 V, I
D
= 3.5 A, T
j
= 25 °C
V
IN
= 5 V, I
D
= 3.5 A, T
j
= 150 °C
R
DS(on)
-
-
90
180
120
240
mΩ
On-state resistance
V
IN
= 10 V, I
D
= 3.5 A, T
j
= 25 °C
V
IN
= 10 V, I
D
= 3.5 A, T
j
= 150 °C
R
DS(on)
-
-
80
160
100
200
Nominal load current (ISO 10483)
V
IN
= 10 V, V
DS
= 0.5 V, T
C
= 85 °C
I
D(ISO)
3.5 - - A
1If the input current is limited by external components, low drain currents can flow and heat the device.
Auto restart behaviour can occur.
Datasheet 3 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
=25°C, unless otherwise specified min. typ. max.
Characteristics
Initial peak short circuit current limit
V
IN
= 10 V, V
DS
= 12 V
I
D(SCp)
- 25 - A
Current limit
1)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 350 µs,
T
j
= -40...+150 °C
I
D(lim)
7 10 15
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7 Ω,V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
- 40 70 µs
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7 Ω,V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
- 70 150
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7 Ω,V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
- 1 3 V/µs
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7 Ω,V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
- 1 3
Protection Functions
Thermal overload trip temperature T
j
t
150 165 - °C
Unclamped single pulse inductive energy
I
D
= 3.5 A, T
j
= 25 °C, V
bb
= 32 V
I
D
= 3.5 A, T
j
= 150 °C, V
bb
= 32 V
E
AS
1000
225
--
--
--
--
mJ
Inverse Diode
Inverse diode forward voltage
I
F
= 5*3.5A, t
m
= 300 µS, V
IN
= 0 V
V
SD
- 1 - V
2)
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
Datasheet 4 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
Block Diagramm
Terms Inductive and overvoltage output clamp
HITFET
IN D
VIN
IDVDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZ
D
S
Short circuit behaviour
VIN
ID
ID(SCp)
t 0 tm t 2
ID(Lim)
t 1
Input circuit (ESD protection)
IN
ESD-ZD I
Source
ESD zener diodes are not designed
for DC current > 2 mA @ VIN>10V. t0: Turn on into a short circuit
tm: Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
Datasheet 5 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
On-state resistance
RON = f(Tj); ID=3.5A; VIN=10V
-50 -25 0 25 50 75 100 °C 150
Tj
0
25
50
75
100
125
150
Ω
200
RDS(on)
typ.
max.
Maximum allowable power dissipation
P
tot = f(Tc)
0 20 40 60 80 100 120 °C 160
150
0
5
10
15
20
25
30
35
40
45
W
55
BTS 117
Ptot
On-state resistance
RON = f(Tj); ID= 3.5A; VIN=5V
-50 -25 0 25 50 75 100 °C 150
Tj
0
25
50
75
100
125
150
175
200
Ω
250
RDS(on)
typ.
max.
Typ. input threshold voltage
V
IN(th) = f(Tj); ID=0.7mA; VDS=12V
-50 -25 0 25 50 75 100 °C 150
Tj
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
2.0
VIN(th)
Datasheet 6 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
Typ. transfer characteristics
I
D
= f(V
IN
); V
DS
=12V; T
j
=25°C
0 1 2 3 4 5 6 V8
V
IN
0
2
4
6
A
10
I
D
Typ. output characteristic
I
D
= f(V
DS
); T
j
=25°C
Parameter: V
IN
0 1 2 3 4 V6
V
DS
0
2
4
6
A
10
I
D
Vin=3V
4V
5V
6V
10V
Transient thermal impedance
Z
thJC
= f(t
p
)
parameter : D=t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
2
s
t
P
-2
10
-1
10
0
10
1
10
K/W
R
thJC
0
0.005
0.01
0.02
0.05
0.1
0.2
D=0.5
Datasheet 7 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
Application examples:
Status signal of thermal shutdown by
monitoring input current
D
S
IN
µC Vbb
HITFET
VIN
RSt
VIN
thermal shutdown
∆
V
µC
∆V = R
ST
*I
IN(3)
Datasheet 8 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
Datasheet 9 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
Package Outlines
1 Package Outlines
0...0.3
10 ±0.2
A
8.51)
1)
7.55 1±0.3
(15)
1.05
0.75 ±0.1
0...0.15
2.54
5.08 0.25 MA B
4.4
±0.1
1.27
B
0.05
2.4
9.25±0.2
0.1
±0.5
4.7
1.3±0.3
2.7 ±0.3
0.5±0.1
8˚ MAX.
0.1 B
All metal surfaces tin plated, except area of cut.
Metal surface min. X = 7.25, Y = 6.9
1) Typical
PG-TO220-3-5-PO V03
Figure 1 PG-TO220-3-5 (Plastic Dual Small Outline Package) (RoHS-Compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
Datasheet 10 Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 117
Revision History
2 Revision History
Version Date Changes
Rev. 1.3 2008-12-10 released automotive green and robust version
Package drawing updated
Rev. 1.2 2008-08-11 Package information updated, removed through hole versions
Rev. 1.1 2008-02-22 Package parameter (humidity and climatic) removed in Maximum ratings
AEC icon and RoHS icon added
Green product and AEC qualified added to the feature list
added Protection footnote on Page 4 and changed front page general description
Package information updated to green
Green explanation added
Rev. 1.0 2000-05-19 released production version
Edition 2008-12-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
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characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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question please contact your nearest Infineon Technologies Office.
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