IRFB4215PBF - INTERNATIONAL RECTIFIER

IRFB4215PbF

HEXFET® Power MOSFET

09/16/10

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 0.56

RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W

RθJA Junction-to-Ambient ––– 40

Thermal Resistance

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VDSS = 60V

RDS(on) = 9.0mΩ

ID = 115A

Advanced HEXFET® Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

lAdvanced Process Technology

lUltra Low On-Resistance

lDynamic dv/dt Rating

l175°C Operating Temperature

lFast Switching

lFully Avalanche Rated

lOptimized for SMPS Applications

lLead-Free

Description

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 115

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 81 A

IDM Pulsed Drain Current  360

PD @TC = 25°C Power Dissipation 270 W

Linear Derating Factor 1.8 W/°C

VGS Gate-to-Source Voltage ± 20 V

IAR Avalanche Current85 A

EAR Repetitive Avalanche Energy18 mJ

dv/dt Peak Diode Recovery dv/dt  4.7 V/ns

TJOperating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

TO-220AB

PD - 95757A

IRFB4215PbF

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode)––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 90A, VGS = 0V 

trr Reverse Recovery Time ––– 78 120 ns TJ = 25°C, IF = 64A

Qrr Reverse Recovery Charge ––– 250 380 nC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

115

360

 Starting TJ = 25°C, L = 60µH

RG = 25Ω, IAS = 85A, VGS=10V (See Figure 12)

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Notes:

ISD ≤ 90A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 This is a typical value at device destruction and represents

operation outside rated limits.

 This is a calculated value limited to TJ = 175°C .

 This is tested with same test conditions as the existing data sheet

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.066 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 9.0 mΩVGS = 10V, ID = 54A 

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 61 ––– ––– S VDS = 25V, ID = 54A

––– ––– 25 µA VDS = 60V, VGS = 0V

––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V

QgTotal Gate Charge ––– ––– 170 ID = 64A

Qgs Gate-to-Source Charge ––– ––– 39 nC VDS = 48V

Qgd Gate-to-Drain ("Miller") Charge ––– ––– 59 VGS = 10V, See Fig. 6 and 13

td(on) Turn-On Delay Time ––– 22 ––– VDD = 30V

trRise Time ––– 160 ––– ID = 64A

td(off) Turn-Off Delay Time ––– 77 ––– RG = 6.2Ω

tfFall Time ––– 110 ––– VGS = 10V, See Fig. 10 

Between lead,

––– ––– 6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance ––– 4080 ––– VGS = 0V

Coss Output Capacitance ––– 840 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 180 ––– pF ƒ = 1.0MHz, See Fig. 5

EAS Single Pulse Avalanche Energy––– 1080220mJ IAS = 90A, L = 54µH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

LDInternal Drain Inductance

LSInternal Source Inductance ––– –––

IGSS

4.5

7.5

IDSS Drain-to-Source Leakage Current

IRFB4215PbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 175 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V = 25V

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

J°

T = 175 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

70A

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

1000

2000

3000

4000

5000

6000

7000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

040 80 120 160 200

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

64A

V = 12V

V = 30V

V = 48V

0.1

100

1000

0.0 0.5 1.0 1.5 2.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 175 C

J°

1 10 100 1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

10000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

IRFB4215PbF

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS

90%

10%

VGS

d(on)

d(off)

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

Thermal Response ( Z

thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.266 0.00036

0.294 0.003748

τJ

τ1

τ2

R1R2

τC

Ci i/Ri

Ci= τi/Ri

25 50 75 100 125 150 175

TC , Case Temperature (°C)

100

120

ID , Drain Current (A)

LIMITED BY PACKAGE

IRFB4215PbF

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QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

25 50 75 100 125 150 175

Starting TJ, Junction Temperature (°C)

200

400

600

800

1000

EAS, Single Pulse Avalanche Energy (mJ)

I D

TOP 12A

18A

BOTTOM 85A

IRFB4215PbF

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Peak Diode Recovery dv/dt Test Circuit

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period







VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For N-channel HEXFET® power MOSFETs

IRFB4215PbF

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/2010

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-220AB packages are not recommended for Surface Mount Application.

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

Note: "P" inassembly line pos ition

i ndi cates "L ead - F r ee"

LINE C

WEEK 19

PART NUMBER

DAT E CODE

YEAR 7 = 1997

AS S E MBLED ON WW 19, 1997

THIS IS AN IRF1010 EXAMPLE:

IN THE ASSEMBLY LINE "C"

LOT CODE 1789 INTERNATIONAL

ASSEMBLY

LOT CODE

RECTIFIER

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